Qinglin Xia

ORCID: 0000-0002-9599-7864
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About
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Research Areas
  • 2D Materials and Applications
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • Magnetic properties of thin films
  • Physics of Superconductivity and Magnetism
  • Quantum and electron transport phenomena
  • Topological Materials and Phenomena
  • Multiferroics and related materials
  • Boron and Carbon Nanomaterials Research
  • Perovskite Materials and Applications
  • Nanowire Synthesis and Applications
  • Nonlinear Photonic Systems
  • ZnO doping and properties
  • Magnetic and transport properties of perovskites and related materials
  • Quantum Dots Synthesis And Properties
  • Chalcogenide Semiconductor Thin Films
  • Heusler alloys: electronic and magnetic properties
  • Advanced Fiber Laser Technologies
  • Advanced materials and composites
  • Advanced Thermoelectric Materials and Devices
  • Injection Molding Process and Properties
  • Powder Metallurgy Techniques and Materials
  • Advanced Memory and Neural Computing
  • Magneto-Optical Properties and Applications
  • Magnetic Properties and Applications

Central South University
2016-2025

Nanchang University
2025

Dalian University of Technology
2025

State Key Laboratory of Powder Metallurgy
2022-2024

Zhejiang University of Technology
2023

Changsha University
2014-2021

Anqing Normal University
2012-2019

University of California, Berkeley
2018

Institute of Semiconductors
2014-2018

Chinese Academy of Sciences
2014-2018

Abstract Two‐dimensional materials with intrinsic magnetism have recently drawn intense interest for both the fundamental studies and potential technological applications. However, to date been largely limited mechanically exfoliated materials. Herein, an atmospheric pressure chemical vapor deposition route ultrathin group VB metal telluride MTe 2 (M = V, Nb, Ta) nanoplates thickness as thin 3 nm is reported. It shown that resulting can be systematically evolved from mostly thicker hexagonal...

10.1002/adma.201801043 article EN Advanced Materials 2018-07-31

2D layered materials have emerged in recent years as a new platform to host novel electronic, optical, or excitonic physics and develop unprecedented nanoelectronic energy applications. By definition, these are strongly anisotropic between the basal plane cross plane. The structural property anisotropies inside their plane, however, much less investigated. Black phosphorus, for example, is material that has such in-plane anisotropy. Here, rare chemical form of arsenic, called black-arsenic...

10.1002/adma.201800754 article EN Advanced Materials 2018-06-11

Abstract 2D elemental layered crystals, such as graphene and black phosphorus (B‐P), have received tremendous attentions due to their rich physical chemical properties. In the applications of nanoelectronic devices, shows super high electronic mobility, but it lacks bandgap which impedes development in logical devices. As an alternative, B‐P mobility up about 1000 cm 2 V −1 s . However, is very unstable degrades rapidly ambient conditions. Orthorhombic arsenic (black arsenic; b‐As) “cousin”...

10.1002/adfm.201802581 article EN Advanced Functional Materials 2018-08-31

Two-dimensional materials (2DMs) with excellent mechanical, thermal, optical, and catalytic properties have attracted a great deal of attention in recent years. Chemical vapor deposition (CVD) is an important method to realize the synthesis high-quality 2DMs. In growth 2DMs through CVD method, substrates play role can greatly affect lateral size, composition, thickness, orientation, crystal quality this review, we first introduce mechanism key parameters system for Then, unique physical...

10.1021/acs.chemmater.0c03549 article EN Chemistry of Materials 2020-12-09

The electronic properties of two-dimensional monolayer and bilayer phosphorene subjected to uniaxial biaxial strains have been investigated using first-principles calculations based on density functional theory. Strain engineering has obvious influence the phosphorene. By comparison, we find that strain is more effective in tuning band gap than strain. Interestingly, observe emergence Dirac-like cones by application zigzag tensile systems. For phosphorene, induce anisotropic dispersion...

10.1063/1.4916254 article EN Journal of Applied Physics 2015-03-24

The electronic properties of two-dimensional puckered arsenene have been investigated using first-principles calculations. effective mass electrons exhibits highly anisotropic dispersion in intrinsic arsenene. Futhermore, we find that out-of-plane strain is tuning the band gap, as material undergoes transition into a metal from an indirect gap semiconductor. Remarkably, observe emergence Dirac-like cone with in-plane strain. Strain modulates not only monolayer arsenene, but also mass. Our...

10.1063/1.4943548 article EN cc-by AIP Advances 2016-03-01

Abstract Multiple structural phases in transition metal dichalcogenides have attracted considerable recent interest for their tunable chemical and electronic properties. Herein, a vapor deposition route to ultrathin CoSe nanoplates with structure is reported. By precisely tailoring the growth temperature, 2D layered tetragonal nonlayered hexagonal can be selectively prepared as square or geometries, thickness thin 2.3 3.7 nm, respectively. X‐ray diffraction, transmission electron microscopy,...

10.1002/adma.201900901 article EN Advanced Materials 2019-05-02

Low-symmetry two-dimensional (2D) semiconductors have attracted great attention because of their rich in-plane anisotropic optical, electrical, and thermoelectric properties potential applications in multifunctional nanoelectronic optoelectronic devices. However, 2D with high performance are still very limited. Here, we report the systematic study few-layered b-As that is a narrow-gap semiconductor, based on experimental theoretical investigations. According to results, come up simple method...

10.1021/acsnano.0c09357 article EN ACS Nano 2020-12-17

Abstract For two‐dimensional (2D) layered material heterojunctions, dynamic modulation of band alignments allows for the design devices with flexible multi‐functional applications. In this paper, a device structure is presented based on MoTe 2 /SnSe field‐effect transistor. By applying bias voltage to electrostatic gate, gate adjusted from negative positive, causing heterojunction transition type‐III alignment type‐II alignment. The working mechanism and performance heterojunctions different...

10.1002/adom.202303088 article EN Advanced Optical Materials 2024-02-26

Two-dimensional (2D) half-metallic materials are essential to develop next-generation spintronic devices. Moreover, electrical controllability and room-temperature magnetism two important ingredients for applications in spintronics. Here, we report findings of a combination these properties 2D honeycomb structures group-V $\mathrm{N}X$ ($X$=N, P, As, Sb, Bi) binary compounds from first-principles calculations. These novel stable semiconductors with indirect band gaps. Hole doping can induce...

10.1103/physrevb.96.075401 article EN Physical review. B./Physical review. B 2017-08-01

As a promising two-dimensional (2D) layered material, black arsenic phosphorus (b-AsP) alloys have received growing attention due to their unique properties and ability for high-performance broadband photodetection. However, high dark current slow response speed already become bottlenecks further development. Manual vertical van der Waals heterojunctions made of different 2D materials offer opportunities alleviate such in simple low-energy way. The rational design band alignment can...

10.1063/5.0144982 article EN Applied Physics Letters 2023-04-10

With the improvement of heterostructure preparation technology, research on physical properties and device performance mixed-dimensional heterostructures has been greatly developed. Numerous studies have focused 2D/2D heterostructures, but 1D/2D is comparatively limited, interface electron transfer mechanism needs to be further explored. In this study, we leverage inherent band structure alignment characteristics 1D Bi1.3In0.7Se3 2D WSe2 create Bi1.3In0.7Se3/WSe2 with Type-I alignment. The...

10.1063/5.0242916 article EN Applied Physics Letters 2025-02-10

Charge–spin interconversion is a key issue in spintronics. It gives rise to series of new phenomena, such as spin Hall magnetoresistance (SMR). In the present work, we report peculiar SMR behaviors heterostructures composed polycrystalline WTe2 nanoplate and Ni80Fe20(Py) film. We observe negative SMR, which contrary positive usually measured heavy metal/ferromagnet bilayers. further transition from with increasing thickness layer, well sign reversal temperature thicker WTe2. The WTe2/Py are...

10.1063/5.0229028 article EN Applied Physics Letters 2025-02-10

Bismuth selenide (Bi 2 Se 3 ) has emerged as a promising material for high-performance photodetectors due to its wideband spectral response, strong in-plane anisotropy, narrow bandgap, high absorption coefficient, and carrier mobility. However,...

10.1039/d4nr05031b article EN Nanoscale 2025-01-01

We theoretically study the spin wave (SW) band structures in antiferromagnetic magnonic crystals formed by applying periodically modulated magnetic fields. find that when field is symmetric, SW bands with different polarization are degenerate. However, if we consider an asymmetric field, degeneracy of lifted due to breaking time-reversal symmetry. In this case, obtain polarization-dependent channels. Furthermore, show tuning both frequency and momentum spaces can be realized help...

10.1063/5.0256440 article EN Applied Physics Letters 2025-03-01

The multilayer WS2 nanosheets prepared from WO3 nanowires exhibit strong ferromagnetic behavior with saturation magnetization (MS) of 0.0058 emu/g and coercive field (HC) 92 Oe at room temperature. By decreasing the temperature down to 3 K Hc is increased up 1115 Oe, revealing existence long-range magnetic ordering. Density functional theory spin-polarized calculations predict that moments in are attributed zigzag edge sulphur S tungsten W atoms. Our findings also suggest a high density...

10.1063/1.4875582 article EN Applied Physics Letters 2014-05-19

Alloying of semiconductors is a good strategy to manipulate their electronic band structures, which can broaden the photoresponse range corresponding optoelectronic devices. In addition, building Schottky diode and improving crystal quality channel semiconductor improve speed device. Here, we report design preparation Bi1.85In0.15S3 nanowires by facile chemical vapor transport method. The individual nanowire photodetectors realize excellent in broadband from solar-blind deep ultraviolet (266...

10.1063/5.0093115 article EN Applied Physics Letters 2022-05-16
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