A5001377516- 2D Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- Nanowire Synthesis and Applications
- Chalcogenide Semiconductor Thin Films
- Perovskite Materials and Applications
- Advanced Sensor and Energy Harvesting Materials
- Conducting polymers and applications
- Quantum Dots Synthesis And Properties
- MXene and MAX Phase Materials
- Advanced Thermoelectric Materials and Devices
- Acoustic Wave Resonator Technologies
- Thermal properties of materials
- Advanced Photonic Communication Systems
- Advanced Semiconductor Detectors and Materials
- Graphene research and applications
- Ferroelectric and Piezoelectric Materials
- GaN-based semiconductor devices and materials
- Topological Materials and Phenomena
Beijing Institute of Technology
2022
Institute of Semiconductors
2020-2022
Chinese Academy of Sciences
2020-2022
University of Chinese Academy of Sciences
2020-2021
Shandong University
2005
Abstract Polarized light can provide significant information about objects, and be used as carrier in communication systems through artificial modulation. However, traditional polarized detection integrate polarizers various functional circuits addition to detectors, are supplemented by complex encoding decoding algorithms. Although the in-plane anisotropy of low-dimensional materials utilized manufacture polarization-sensitive photodetectors without polarizers, low anisotropic photocurrent...
Abstract Flexible electronic devices are widely used in daily life. Among them, flexible sensors studied by their potential for extensive applications. Materials one of the essential foundations making devices. Due to excellent unique properties organic and inorganic hybrid materials, they manufacture sensors. sensor technology is developed combining materials these can ensure high frequency high‐speed conductive property a device while flexible. In this review, main three elements mentioned...
The near-infrared polarimetric image sensor has a wide range of applications in the military and civilian fields, thus developing into research hotspot recent years. Because their distinguishing 1D structure features, ordered GaSb nanowire (NW) arrays possess potential for polarization photodetection. In this work, single-crystalline NWs are synthesized through sulfur-catalyzed chemical vapor deposition process. A sulfur-passivation thin layer is formed on NW surface, which prevents core...
Low-symmetry two-dimensional (2D) semiconductors have attracted great attention because of their rich in-plane anisotropic optical, electrical, and thermoelectric properties potential applications in multifunctional nanoelectronic optoelectronic devices. However, 2D with high performance are still very limited. Here, we report the systematic study few-layered b-As that is a narrow-gap semiconductor, based on experimental theoretical investigations. According to results, come up simple method...
The near-infrared (NIR) polarized photodetector has wide range of applications including the object identification. Wavelength 1550 nm is least loss band for transmission communication, and study photodetectors working at demonstrate special scientific applied significances. GaSb attracted tremendous attention in field photoelectric detection due to its suitbale gap, high mobility, sensitivity, good compatibility with modern microelectronics technology. In this work, a highly...
Polarization-sensitive photodetector based on low-dimensional semiconductor is a kind of special photoelectric device which can take advantage the semiconductor's anisotropy and convert it into an electrical signal. However, polarization performance limited by challenges semiconductors. The design alloy semiconductors with excellent one mainstream methods to improve dichroic ratio polarization-sensitive photodetector. Here, we tunable alloying Sb-S-Se nanowires (NWs), be used in research...
B-As<sub>0.084</sub>P<sub>0.916</sub>crystal-based FETs show 10<sup>5</sup><italic>I</italic><sub>on/off</sub>ratio, the highest charge-carrier mobility of 147 cm<sup>2</sup>V<sup>−1</sup>s<sup>−1</sup>and exhibit excellent photoresponse properties from 450 to 2200 nm with a responsivity 37 A W<sup>−1</sup>, specific detectivity 7.18 × 10<sup>10</sup>Jones.
With the rapid development of mobile Internet and intelligent devices, flexible electronic technology has attracted wide attention driven by huge demand market. As one type sensors have great interest because their promising prospects in artificial intelligence, medical health, environmental protection. In recent years, with high sensitivity, selectivity, good deformability, reliable stability, portability are urgently needed to meet developments skin, human-computer interaction, point care...
Thermoelectric materials which enable heat-to-electricity conversion are fundamentally important for heat management in semiconductor devices. Achieving high thermoelectric performance requires blocking the thermal transport and maintaining electronic transport, but it is a challenge to satisfy both criteria simultaneously. We propose that tuning interlayer distance can effectively modulate electrical conductivities. find group IV–VI V semiconductors with moderate exhibit performance. Taking...