A5035927722- 2D Materials and Applications
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Graphene research and applications
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Advanced Photocatalysis Techniques
- Cancer-related gene regulation
- Gas Sensing Nanomaterials and Sensors
- Supercapacitor Materials and Fabrication
- Conducting polymers and applications
- Advancements in Battery Materials
- Magnetic Field Sensors Techniques
- Organic Electronics and Photovoltaics
- Solid-state spectroscopy and crystallography
- Advanced biosensing and bioanalysis techniques
- Gear and Bearing Dynamics Analysis
- Metal and Thin Film Mechanics
- Semiconductor materials and devices
- Advanced Sensor and Energy Harvesting Materials
- Tribology and Lubrication Engineering
- Electrocatalysts for Energy Conversion
- Nanowire Synthesis and Applications
- RNA modifications and cancer
- Luminescence Properties of Advanced Materials
Guangdong University of Technology
2016-2025
Changzhou University
2024
Guangzhou Mechanical Engineering Research Institute (China)
2013-2024
Xi'an University of Technology
2015-2024
Beijing Institute of Technology
2017-2024
Shenzhen Luohu People's Hospital
2021-2023
Shanghai University of Electric Power
2023
Southwest University
2023
Changsha University of Science and Technology
2022-2023
Nanchang Institute of Science & Technology
2022-2023
A reduced graphene oxide (R-GO)-based field-effect transistor (FET) biosensor used for ultrasensitive label-free detection of DNA via peptide nucleic acid (PNA)-DNA hybridization is reported. In this work, R-GO was prepared by reduction GO with hydrazine, and the FET fabricated drop-casting suspension onto sensor surface. PNA instead as capture probe employed, performed through PNA-DNA biosensor. The limit low 100 fM achieved, which 1 order magnitude lower than that previously reported based...
Abstract Large-area monolayer WS 2 is a desirable material for applications in next-generation electronics and optoelectronics. However, the chemical vapour deposition (CVD) with rigid inert substrates large-area sample growth suffers from non-uniform number of layers, small domain size many defects, not compatible fabrication process flexible devices. Here we report self-limited catalytic surface uniform single crystals millimetre films by ambient-pressure CVD on Au. The weak interaction...
Magnetic two-dimensional materials have attracted considerable attention for their significant potential application in spintronics. In this study, we present a high-quality Fe-doped SnS2 monolayer exfoliated using micromechanical cleavage method. Fe atoms were doped at the Sn atom sites, and contents are ∼2.1%, 1.5%, 1.1%. The field-effect transistors based on Fe0.021Sn0.979S2 show n-type behavior exhibit high optoelectronic performance. measurements that pure is diamagnetic, whereas...
Polarized detection has been brought into operation for optics applications in the visible band. Meanwhile, an advanced requirement short-wave near-infrared (SW-NIR) (700–1100 nm) is proposed. Typical IV–VI chalcogenides—2D GeSe with anisotropic layered orthorhombic structure and narrow 1.1–1.2 eV band gap—potentially meets demand. Here we report unusual angle dependences of Raman spectra on high-quality crystals. The polarization-resolved absorption (400–950 polarization-sensitive...
The structural and electronic properties of black phosphorus/MoS2 (BP/MoS2) van der Waals (vdW) heterostructure are investigated by first-principles calculations. It is demonstrated that the BP/MoS2 bilayer a type-II p-n vdW heterostructure, thus lowest energy electron-hole pairs spatially separated. band gap can be significantly modulated external electric field, transition from semiconductor to metal observed. gets further support edges BP MoS2 in bilayer, which show linear variations with...
Using first-principles calculations, the structural and electronic properties of group-IV monochalcogenide monolayers are investigated. It is demonstrated that all employed here possess moderate indirect bandgaps. In-plane elastic stiffness calculation demonstrates anisotropy in these materials, further resulting anisotropic response to in-plane strains their optical properties. The bandgaps GeX SnX can be linearly reduced by applied compressive semiconductor-to-metal transition realized...
Abstract Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In specific van heterojunction, the band alignment engineering is crucial and feasible to realize high performance multifunctionality. Here, we design ferroelectric-tuned heterojunction device structure by integrating GeSe/MoS 2 VHJ poly (vinylidene fluoride-trifluoroethylene)-based ferroelectric polymer. An ultrahigh electric field derived from polarization...
Abstract Hard carbon stands out as one of the premier anodes for potassium‐ion batteries (PIBs), celebrated its cost‐effectiveness, natural abundance, and high yield. Yet, performance in PIBs remains subpar due to slow kinetics, a result large ionic radius K‐ions. Herein, unique lamellar N/O/S‐tri‐doped hard (NOSHC) has been developed at an impressively low pyrolysis temperature 500°C, showcasing distinct “slope‐dominated” characteristic. NOSHC delivers superior rate with dominant...
In recent years, two-dimensional (2D) nonlayered Bi2O2Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability the atmosphere, moderate narrow band gaps. However, 2D photodetectors typically present large dark current, relatively slow response speed, persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors low-consumption broadband detection. Herein, a...
Low-toxicity tin halide perovskites with excellent optoelectronic properties are promising candidates for photodetection. However, perovskite photodetectors have suffered from high dark current owing to uncontrollable Sn
2D van der Waals heterostructures with different types of band alignment have recently attracted great attention due to their unique optical and electrical properties. Most are formed by transfer‐stacking two monolayers together, but the interfacial quality controllable orientation such artificial structures inferior those epitaxial grown heterostructures. Herein, for first time, a direct vapor phase growth high‐quality vertically stacked heterostructure SnS 2 /MoS is reported. An extremely...
Most graphene field-effect transistor (G-FET) biosensors are fabricated through a routine process, in which is transferred onto Si/SiO2 substrate and then devices subsequently produced by micromanufacture processes. However, such fabrication approach can introduce contamination the surface during lithographic resulting interference for subsequent biosensing. In this work, we have developed novel directional transfer technique to fabricate G-FET based on chemical-vapor-deposition- (CVD-)...
Abstract Construction of high‐performance organic light‐emitting transistors (OLETs) remains challenging due to the limited desired semiconductor materials. Here, two superior high mobility emissive semiconductors, 2,6‐diphenylanthracene (DPA) and 2,6‐di(2‐naphthyl) anthracene (dNaAnt), are introduced into construction OLETs. By optimizing device geometry for balanced ambipolar efficient charge transport using high‐quality DPA dNaAnt single crystals as active layers, high‐efficiency...
Van der Waals (vdW) p-n heterojunctions consisting of various 2D layer compounds are fascinating new artificial materials that can possess novel physics and functionalities enabling the next-generation electronics optoelectronics devices. Here, it is reported WSe2/WS2 perform electrical transport properties such as distinct rectifying, ambipolar, hysteresis characteristics. Intriguingly, tunable polarity transition along a route n-"anti-bipolar"-p-ambipolar observed in owing to successive...
Large-scale PbI2 monolayers and few layers with high crystallinity a uniform hexagonal shape were synthesized via facile physical vapour deposition (PVD) method. The transition from direct band-gap in the bulk to an indirect monolayer is verified by photoluminescence (PL) spectra, optoelectronic properties, first principle calculations.
First principles calculations are used to explore the structural and electronic properties of black phosphorus/blue phosphorus (black-p/blue-p) van der Waals (vdW) p-n heterostructure. An intrinsic type-II band alignment with a direct gap at Γ point is demonstrated. The spatial separation lowest energy electron-hole pairs can be realized make black-p/blue-p heterostructure good candidate for applications in optoelectronics. Black-p/blue-p exhibits modulation its edges by applied...
Single-crystalline quasi-2D PbI<sub>2</sub> nanosheets and quasi-1D nanowires, which showed different crystallographic symmetries, were controllably synthesized utilized in flexible photodetectors with excellent mechanical stability durability.
Abstract The structural, electronic, transport and optical properties of black phosphorus/MoS 2 (BP/MoS ) van der Waals (vdw) heterostructure are investigated by using first principles calculations. band gap BP/MoS bilayer decreases with the applied normal compressive strain a semiconductor-to-metal transition is observed when more than 0.85 Å. also exhibits modulation its carrier effective mass concentration strain, suggesting that mobility engineering good piezoelectric effect can be...
Reducing nucleation density and healing structural defects are two challenges for fabricating large-area high-quality single-crystal graphene, which is essential its electronic optoelectronic applications. We have developed a method involving chemical vapor deposition (CVD) growth followed by repeated etching-regrowth, to solve both problems at once. Using this method, we can obtain graphene domains with size much larger than that allowed the in initial efficiently heal similar...
Two-dimensional (2D) materials and their related van der Waals heterostructures have attracted considerable interest for fascinating new properties. There are still many challenges in realizing the potential of 2D semiconductors practical (opto)electronics such as signal transmission logic circuit, etc. Herein, we report gate-tunable anti-ambipolar devices on basis few-layer transition metal dichalcogenides (TMDs) to gain higher information storage density. Our study shows that carrier...