A5005955875- 2D Materials and Applications
- Ga2O3 and related materials
- MXene and MAX Phase Materials
- Acoustic Wave Phenomena Research
- GaN-based semiconductor devices and materials
- Perovskite Materials and Applications
- Metamaterials and Metasurfaces Applications
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Optical Network Technologies
- Graphene research and applications
- Advanced Fiber Optic Sensors
- Semiconductor Quantum Structures and Devices
- Aerodynamics and Acoustics in Jet Flows
- Advanced Neural Network Applications
- Photonic Crystal and Fiber Optics
- Topological Materials and Phenomena
- Liquid Crystal Research Advancements
- Mechanical and Optical Resonators
- Advanced Image Fusion Techniques
- Nanowire Synthesis and Applications
- Hearing Loss and Rehabilitation
- IoT and Edge/Fog Computing
- Infrared Target Detection Methodologies
- Speech and Audio Processing
Civil Aviation Flight University of China
2023
South China Normal University
2022-2023
Institute of Semiconductors
2022
Guangdong University of Technology
2017-2021
Tsinghua University
2014
In recent years, two-dimensional (2D) nonlayered Bi2O2Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability the atmosphere, moderate narrow band gaps. However, 2D photodetectors typically present large dark current, relatively slow response speed, persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors low-consumption broadband detection. Herein, a...
Mechanically exfoliated 2D WS<sub>2</sub> nanosheets were transferred on epitaxially grown 1D tellurium microwires. The Te–2D heterostructures have potential in self-powered photodetectors and photovoltaics.
Abstract Ultrasensitive photodetectors with polarization angle recognition have broad applications in both civilian and military domains. The emerging 2D materials in‐plane anisotropy offer promising platforms for realizing these applications, owing to their intriguing properties. However, the lack of an effective photoconductivity gain mechanism low photocurrent anisotropic ratio made it challenging achieve digital output information. Herein, a gate voltage‐dependent phototransistor based...
Bi2O2Se nanosheets, an emerging ternary non-van der Waals two-dimensional (2D) material, have garnered considerable research attention in recent years owing to their robust air stability, narrow indirect bandgap, high mobility, and diverse intriguing properties. However, most of them show dark current relatively low light on/off ratio slow response speed because the large charge carrier concentration bolometric effect, hindering further application low-energy-consuming optoelectronics....
A solution-fabricated Te/Si mixed-dimensional vdWH can function well as a high-performance broadband self-powered photodetector, achieving an ultrahigh responsivity of 6.49 W −1 at 0 V.
In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area mechanical flexibility 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, switches, etc. Herein, Bi2O2Se nanowires been...
The broad application of ultraviolet (UV) photodetectors in civil, astronomical, and military fields has sparked significant research interest. Recently, two-dimensional layered transition metal dichalcogenides have emerged as an ideal platform for developing high-performance versatile due to their abundant intriguing optoelectronic properties. Here, we constructed a photodetector utilizing dual heterojunctions based on rhenium disulfide (ReS2) nanosheet/tungsten (WS2) nanosheet/p-type...
GaN, due to its large band gap and high carrier mobility, has been widely used in fast-response ultraviolet (UV) photodetectors (PDs). The existing junction-based two-dimensional electron gas (2DEG)-based devices have different focuses on the performance of detection. To achieve comprehensive performance, we fabricate a high-performance UVPD utilizing GaN recessed-gate mobility transistor (HEMT) integrated with p-GaN buried layer. Benefiting from effective p-GaN/u-GaN depletion junction,...
In this work, a p-n junction-coupled metal-insulator-semiconductor (MIS) normally-off high-electron-mobility transistor (HEMT) UVPD is proposed. A two-dimensional electron gas (2DEG) at the AlN/U-GaN interface entirely depleted with dark current of 1.97 × 10-11 because design sandwiched p-GaN layers. Under 365 nm illumination, 2DEG light triggered Vds = 1 V high on/off ratio over 107 power density 286.39 mW·cm-2. Meanwhile, it exhibits fast rise and decay times 248.39 584.79 µs,...
A prototype autostereoscopic three-dimensional (3D) light-emitting diode (LED) display using a cylindrical diffractive optical elements (C-DOEs) sheet as the steering element is proposed. The operation of system and calculation method parameters are described in detail. DOEs placed from distance LED panel which five times smaller existing technology, column spacings pixels nonequal order to equalize between viewing zones. has 1.33 m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
With the continuous advancement of intelligent vehicle technology, automatic obstacle avoidance (AOA) has become a crucial component in-vehicle systems. This study introduces an AOA trolley system based on ReS2/WSe2 heterojunction photodetectors. The device with type-II band alignment exhibits impressive on/off current ratio 7.14 × 104, along rapid impulse response time 32.3/24.4 μs, detectivity 2.0 1013 Jones, and anisotropic 4.2 under 532 nm illumination. Additionally, is electrically...
Carrier mobility is one of most important figures merit for materials that can determine to a large extent the corresponding device performances. So far, extensive efforts have been devoted improvement two-dimensional (2D) regarded as promising candidates complement conventional semiconductors. Graphene has amazing but suffers from zero bandgap. Subsequently, 2D transition-metal dichalcogenides benefit their sizable bandgap while limited. Recently, elemental such representative black...
We report an ultraviolet photodetector (UV PD) based on a gallium nitride (GaN) metal oxide semiconductor field effect transistor (MOSFET) with 5.9 μm thick n–p–n+ heterojunction grown 4 inch sapphire substrate by organic chemical vapor deposition (MOCVD). The UV PD incorporates trench gate vertical MOSFET high-quality 5 drift layer, showing enhancement mode operation threshold voltage (Vth) of 7 V and Ilight/Idark ratio exceeding 106. Benefiting from the built-in electric fields across...
In this paper, through changing the phononic crystal surface and adjusting structure of layer, we observed Schoch effect two dimensional crystal, shift reached 7.1 times lattice constant.To further understand physical mechanism kind phenomenon, finite element method is used to calculate band model.Because influences structure, there exists a waveguide mode in passband.Through careful analysis sound pressure field profile, it found makes incident wave energy go into layer which resulting...
Acoustic vortex beam, which carries the orbital angular momentum, has attracted great interest in recent years. In this paper, we propose a novel curved impedance-matched metasurface constructed with tunable units, are filled mixed gases different refractive indices. It converts an acoustic point source to beam nearly unity transmittance broad frequency bandwidth. By arranging demonstrate topological charge modulation and rotated direction shifting for beams. addition, combining phase...
DTMM is a library designed for efficient deployment and execution of machine learning models on weak IoT devices such as microcontroller units (MCUs). The motivation designing comes from the emerging field tiny (TinyML), which explores extending reach to many low-end achieve ubiquitous intelligence. Due capability embedded devices, it necessary compress by pruning enough weights before deploying. Although has been studied extensively computing platforms, two key issues with methods are...
Infrared technology can detect targets under special weather conditions, such as night, rain and fog. To improve the detection accuracy of vehicles, pedestrians other in infrared images, an target algorithm with fusion neural network is proposed. Firstly, we use Ghost convolution to replace resunit unit layer deep residual YOLOv5s, which reduce amount parameters without losing accuracy. Then, global channel attention (GCA) added upper sampling layer, further improved by enhancing...