A5100776412- Ga2O3 and related materials
- Plasmonic and Surface Plasmon Research
- Semiconductor Quantum Structures and Devices
- Metamaterials and Metasurfaces Applications
- GaN-based semiconductor devices and materials
- Advanced Antenna and Metasurface Technologies
North University of China
2023
South China Normal University
2023
In this work, a p-n junction-coupled metal-insulator-semiconductor (MIS) normally-off high-electron-mobility transistor (HEMT) UVPD is proposed. A two-dimensional electron gas (2DEG) at the AlN/U-GaN interface entirely depleted with dark current of 1.97 × 10-11 because design sandwiched p-GaN layers. Under 365 nm illumination, 2DEG light triggered Vds = 1 V high on/off ratio over 107 power density 286.39 mW·cm-2. Meanwhile, it exhibits fast rise and decay times 248.39 584.79 µs,...
Epsilon-near-zero nanoantennas can be used to tune the far-field radiation pattern due their exceptionally large intensity-dependent refractive index. Here, we propose hybrid optical antenna based on indium tin oxide (ITO) optically deflection of radiation. In particular, a structure ITO and dielectric material, which makes angle changes 17 ∘ as incident intensities increases. Finally, array or nanodisks enhance unidirectionality needle-like, with angular beam width α< 8∘ main...