A5054192912- 2D Materials and Applications
- Perovskite Materials and Applications
- Chalcogenide Semiconductor Thin Films
- Gas Sensing Nanomaterials and Sensors
- Ga2O3 and related materials
- MXene and MAX Phase Materials
- Photonic and Optical Devices
- Quantum Dots Synthesis And Properties
- GaN-based semiconductor devices and materials
- CCD and CMOS Imaging Sensors
- Optical Polarization and Ellipsometry
- Graphene research and applications
- Neural Networks and Reservoir Computing
- Plasmonic and Surface Plasmon Research
- ZnO doping and properties
- Topological Materials and Phenomena
- Color Science and Applications
- Nanowire Synthesis and Applications
- Advanced Semiconductor Detectors and Materials
- Advanced Memory and Neural Computing
- Infrared Target Detection Methodologies
- Advanced Sensor and Energy Harvesting Materials
- Optical Network Technologies
- Inorganic Fluorides and Related Compounds
- Crystal Structures and Properties
University of Chinese Academy of Sciences
2021-2025
Chinese Academy of Sciences
1993-2025
Institute of Semiconductors
2021-2025
Beijing Jiaotong University
2024
Hunan University
2022
Changchun Institute of Applied Chemistry
1993
The intentionally designed band alignment of heterostructures and doping engineering are keys to implement device structure design performance optimization. According the theoretical prediction several typical materials among transition metal dichalcogenides (TMDs) group-IV chalcogenides, MoS2 SnSe2 present largest staggered offset. large offset is conducive separation photogenerated carriers, thus /SnSe2 a theoretically ideal candidate for fabricating photodetector, which also verified in...
Abstract Remote sensing technology, which conventionally employs spectrometers to capture hyperspectral images, allowing for the classification and unmixing based on reflectance spectrum, has been extensively applied in diverse fields, including environmental monitoring, land resource management, agriculture. However, miniaturization of remote systems remains a challenge due complicated dispersive optical components spectrometers. Here, m‐phase GaTe 0.5 Se with wide‐spectral photoresponses...
Currently, the improvement in processing capacity of traditional processors considerably lags behind demands real-time image caused by advancement photodetectors and widespread deployment high-definition sensors. Therefore, achieving at sensor level has become a prominent research domain field photodetector technology. This goal underscores need for with enhanced multifunctional integration capabilities than can perform computations using optical or electrical signals. In this study, we...
Abstract For two‐dimensional (2D) layered material heterojunctions, dynamic modulation of band alignments allows for the design devices with flexible multi‐functional applications. In this paper, a device structure is presented based on MoTe 2 /SnSe field‐effect transistor. By applying bias voltage to electrostatic gate, gate adjusted from negative positive, causing heterojunction transition type‐III alignment type‐II alignment. The working mechanism and performance heterojunctions different...
Compared with three-dimensional semiconductors, low-dimensional (LD) semiconductors have unique atomic arrangements and excellent optical electrical characteristics, such as high absorptivity, mechanical flexibility, absence of dangling bonds on the surface. With these advantages, LD are considered a kind promising materials in field photodetection. However, applications limited by their dimensional constraint, large dark current, noise, low quantum efficiency, slow response speed, other...
Controlling the manner of band alignment heterostructures increases design freedom with novel physical properties, enables new functional devices, and improves device performance, but lattice matching limits diversity traditional heterostructures. Van der Waals (vdWHs) fabricated by rationally mechanical restacking different two-dimensional (2D) layered materials or sequential synthesis can overcome this limitation. However, it is difficult to achieve full control over for a specific vdWHs...
Wide bandgap semiconductor AlGaN alloys have been identified as key materials to fabricate solar-blind ultraviolet photodetectors (SBUV PDs). Herein, a self-driven SBUV polarization-sensitive PD (PSPD) based on semipolar (112̅2)-oriented films is reported. Using the flow-rate modulation epitaxy method, full widths at half maximum (FWHMs) for obtained (112̅2) along [112̅3̅] and [11̅00] rocking curves are 0.205° 0.262°, respectively, representing best results heteroepitaxial so far. Density...
Polarization-sensitive photodetectors (PSPs) are pivotal for navigation, security surveillance, and information encryption applications. While molecularly thin single-crystalline p-n heterojunctions with well-defined orientations represent an ideal material system such applications,...
Tin selenide (SnSe) has attracted considerable interest recently on account of its low-symmetry lattice structure, great compatibility with key semiconductor technology, and remarkable electrical optical performance. SnSe-based polarization-sensitive photodetectors show promising application prospects because their fast response excellent photoelectric Here, an in-plane anisotropic SnSe nanosheet was synthesized reported in detail by applying angle-resolved polarized Raman spectroscopy...
Polarization-sensitive photodetector based on low-dimensional semiconductor is a kind of special photoelectric device which can take advantage the semiconductor's anisotropy and convert it into an electrical signal. However, polarization performance limited by challenges semiconductors. The design alloy semiconductors with excellent one mainstream methods to improve dichroic ratio polarization-sensitive photodetector. Here, we tunable alloying Sb-S-Se nanowires (NWs), be used in research...
Abstract Facing the future development trend of miniaturization and intelligence electronic devices, solar‐blind photodetectors based on ultrawide‐bandgap 2D semiconductors have advantages low dark current, high signal‐to‐noise ratio, as well features micro‐nanometer multi‐functionalization material which potential applications in photoelectric sensor part high‐performance machine vision systems. This study reports a oxide semiconductor, AsSbO 3 , with an ultrawide bandgap (4.997 eV for...
Polarization imaging presents advantages in capturing spatial, spectral, and polarization information across various spectral bands. It can improve the perceptual ability of image sensors has garnered more applications. Despite its potential, challenges persist identifying band implementing enhancement using imaging. These often necessitate integrating spectrometers or other components, resulting increased complexities within processing systems hindering device miniaturization trends. Here,...
For low-dimensional materials, the in-plane anisotropy of their structure can realize detection polarized light. This characteristic be utilized to fabricate polarization-sensitive photodetectors without polarizers. It is conductive miniaturization and integration devices. As a typical IV-VI group material, GeSe easy synthesized by chemical vapor transport method, has obvious response light in visible near-infrared band. In this study, GeSe-based photodetector was fabricated. The sensitivity...
Polarization Reversal Miniaturized image band identification can be accomplished by utilizing a polarization-sensitive photodetector with polarization reversal capability. In article number 2307769, Zhongming Wei and co-workers achieve photoresponse employing in-plane pucker-like group IV–VI semiconductors MX (M = Ge, Sn; X S, Se), leveraging the inherent distinctions in transition probabilities of charge carriers within K-space along various crystallographic directions.
High-precision image processing is an essential component in diverse applications. A significant challenge current CMOS sensors the separation of front-end capture from back-end processing. The operational gap necessitates transfer data between sensing and computing units, resulting increased power consumption. Addressing this issue, study focuses on imperative need to integrate in-sensor approaches, reducing In work, a gate-tunable polarization-sensitive photodetector was fabricated using...
Abstract Surface fluorination of poly(trimethylsilylpropyne) (PTMSP) membranes by CF 4 plasma was studied. The surface the carried out in an atmosphere a capacitively coupled discharge apparatus with external electrodes. Dramatic increase selectivity ( P / ) observed. effect conditions such as duration treatment and power on permeabilities X‐ray photoelectron spectrometric data modified PTMSP showed drastic alternation layer. were observed to be dependent F/C atomic ratio. At > 1, value...
Optical anisotropy offers an extra degree of freedom to dynamically and reversibly regulate polarizing optical components, such as polarizers, without energy consumption with high modulating efficiency. In this paper, we theoretically numerically design broadband incident-angle-modulation near-infrared based on the SnSe, whose is quantitatively evaluated by complete dielectric tensor, complex refractive index derived birefringence (~|Δ
Optical logic operation is promising for ultrafast information processing and optical computing due to the high computation speed low power consumption. However, conventional devices require either a complex structure circuit design or constant voltage supply, which impedes development of high-density integrated circuits. Here, all-optical are designed using self-powered polarization-sensitive photodiode GeSe homojunction, attributed an anisotropic band built-in electric field. The single...