A5047661421- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Semiconductor Quantum Structures and Devices
- Photocathodes and Microchannel Plates
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and interfaces
- Acoustic Wave Resonator Technologies
- Silicon Carbide Semiconductor Technologies
- Plasma Diagnostics and Applications
- solar cell performance optimization
- Analytical Chemistry and Sensors
- Photonic and Optical Devices
- 2D Materials and Applications
- Diamond and Carbon-based Materials Research
- Radio Frequency Integrated Circuit Design
- Advanced Sensor Technologies Research
- Thermal Radiation and Cooling Technologies
- Optical Network Technologies
- Neural Networks and Reservoir Computing
- Advancements in Semiconductor Devices and Circuit Design
- Optical Coatings and Gratings
- Graphene research and applications
Institute of Semiconductors
2008-2025
Chinese Academy of Sciences
2008-2025
University of Chinese Academy of Sciences
2021-2025
Over the past two decades, solar- and astrophysicists material scientists have been researching developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption small size for replacing traditional heavy high-energy-consuming microchannel-detection systems, to study formation evolution of stars. However, most desirable VUV photovoltaic detector capable achieving zero has not yet achieved. With high-crystallinity multistep epitaxial grown AlN as a...
The performances of In0.65Ga0.35N single-junction solar cells with different structures, including various doping densities and thicknesses each layer, have been simulated. It is found that the optimum efficiency a cell 20.284% 5 × 1017 cm−3 carrier concentration front basic regions, 130 nm thick p-layer 270 nm n-layer.
Uniform and continuous wafer-level sp2-hybridized boron nitride (sp2-BN) is essential for the development of other III-nitride semiconductors in alleviating lattice mismatch constructing flexible devices. In this work, we realize thick sp2-BN on 2 in. c-plane sapphire with a flow modulation epitaxy (FME) method by metal–organic chemical vapor deposition (MOCVD). It revealed that pulsed ammonia triethylboron interruptions greatly improve surface morphology crystalline quality sp2-BN,...
Abstract The realization of high quality (0001) GaN on Si(100) is paramount importance for the monolithic integration Si‐based integrated circuits and GaN‐enabled optoelectronic devices. Nevertheless, thorny issues including large thermal mismatch distinct crystal symmetries typically bring about uncontrollable polycrystalline formation with considerable surface roughness standard Si(100). Here a breakthrough high‐quality single‐crystalline film SiO 2 /Si(100) presented by quasi van der...
Wide bandgap semiconductor AlGaN alloys have been identified as key materials to fabricate solar-blind ultraviolet photodetectors (SBUV PDs). Herein, a self-driven SBUV polarization-sensitive PD (PSPD) based on semipolar (112̅2)-oriented films is reported. Using the flow-rate modulation epitaxy method, full widths at half maximum (FWHMs) for obtained (112̅2) along [112̅3̅] and [11̅00] rocking curves are 0.205° 0.262°, respectively, representing best results heteroepitaxial so far. Density...
Hexagonal boron nitride (h-BN) and aluminum (AlN) are highly suitable for the development of flexible nitride-based ultraviolet devices. However, there limited reports on integration high-quality h-BN within III-nitride systems. We have fabricated thickness-controllable a step-flow AlN template using two-step growth method through metalorganic chemical vapor deposition (MOCVD). Due to formation etched defects during one-step growth, grown at 1460 °C presents disordered layer near defect...
Over the past two decades, successful growth of high-quality wide-bandgap III-nitrides has made realization a broad range new device applications, including optoelectronic and microelectronic fields. Through monolithic integration photonic electronic devices simultaneously, different functional modules can be integrated on same wafer, eliminating parasitic effects caused by redundant external components, enhancing system robustness saving chip area. The scalable circuits have great potential...
In this work, we present a stress-free AlN film with improved crystal quality assisted by h-BN and demonstrate the mechanical exfoliation of wafer-scale single-crystal freestanding membrane reveal controllable mechanism AlN. Uniform continuous is directly grown on c-plane sapphire using flow modulation epitaxy mode metal-organic chemical vapor deposition. The nucleation evolution processes quasi-van der Waals (QvdWE) are revealed. It found that O2-plasma-treated can effectively promote...
Abstract InGaN photovoltaic structures with p–n junctions have been fabricated by metal organic chemical vapour deposition. Using double‐crystal X‐ray diffraction measurements, it was found that the room temperature band gaps of p‐InGaN and n‐InGaN films were 2.7 2.8 eV, respectively. Values 3.4 × 10 –2 mA cm short‐circuit current, 0.43 V open‐circuit voltage 0.57 fill factor achieved under ultraviolet illumination (360 nm), which related to junction connected back‐to‐back a Schottky barrier...
Semipolar (11–22) AlN films grown on m-plane sapphire are investigated by flow-rate modulation epitaxy (FME). The full width of half maximums (FWHMs) thin film for X-ray rocking curves (XRCs) reduced from 1398 arcsec traditional growth to 865 III-FME. defect density is attributed prolonged Al mobility, which results in the transition mode quasi three-dimensional two-dimensional step flow. On-axis FWHM[11–23] and off-axis FWHM[0002] XRCs 6 μm-thick III-FME 346 641 arcsec, respectively....
Pt/AlGaN/AlN/GaN high electron mobility transistors (HEMT) were fabricated and characterized for hydrogen sensing. Pt Ti/Al/Ni/Au metals evaporated to form the Schottky contact ohmic contact, respectively. The sensors can be operated in either field effect transistor (FET) mode or diode mode. Current changes time dependence of under FET modes compared. When sensor was mode, have larger current change 8 mA, but its sensitivity is only about 0.2. In very small reverse bias it increased greatly...
The efficiencies of InxGa1−xN two-junction solar cells are calculated with various bandgap combinations subcells under AM1.5 global, direct and AM0 spectra. influence top-cell thickness on efficiency has been studied the performance for maximum light concentration spectra evaluated. Under one-sun irradiance, optimum is 35.1% global spectrum, a combination top/bottom as 1.74 eV/1.15 eV. And limiting 40.9% highest cell 1.72 eV/1.12
The sheet carrier concentrations, conduction band profiles and amount of free carriers in the barriers have been determined by solving coupled Schrödinger Poisson equation self-consistently for coherently grown Al0.3Ga0.7N/GaN Al0.3Ga0.7N/AlN/GaN structures on thick GaN. heterojunction with without 1 nm AlN interlayer MOCVD sapphire substrate, physical properties these two investigated various instruments such as Hall measurement X-ray diffraction. By comparison theoretical experimental...
The effect of thickness the high-temperature (HT) AlN buffer layer on properties GaN grown Si(1 1 1) has been investigated. Optical microscopy (OM), atomic force (AFM) and X-ray diffraction (XRD) are employed to characterize these samples by metal-organic chemical vapor deposition (MOCVD). results demonstrate that morphology crystalline epilayer strongly depend HT layer, optimized is about 110 nm. Together with low-temperature (LT) interlayer, high-quality low crack density can be obtained.
AlGaN/GaN high electron mobility transistor (HEMT) hetero-structures were grown on the 2-in Si (1 1 1) substrate using metal-organic chemical vapor deposition (MOCVD). Low-temperature (LT) AlN layers inserted to relieve tension stress during growth of GaN epilayers. The HEMT samples exhibited a maximum crack-free area 8 mm×5 mm, XRD (0 0 2) full-width at half-maximum (FWHM) 661 arcsec and surface roughness 0.377 nm. device with gate length 1.4 μm width 60 demonstrated drain current density...
AlGaN/GaN npn heterojunction bipolar transistor structures were grown by low-pressure MOCVD. Secondary ion mass spectroscopy (SIMS) measurements carried out to study the Mg memory effect and redistribution in emitter–base junction. The results indicated that there is a Mg-rich film formed ongrowing layer after Cp2Mg source switched off. can be confined base section switching off for appropriate time before end of growth. Low temperature growth undoped GaN spacer suppresses from rich film....
High-temperature annealing (HTA) has been recognized as an available method to annihilate the domain boundaries and improve crystalline quality of AlN films. Here, semipolar (112̅2) films through HTA process are utilized prepare vacuum ultraviolet photodetectors (VUV PDs). The resulting show full widths at half-maximum high-resolution X-ray rocking curves that 527 622 arcsec along [112̅3̅]AlN [11̅00]AlN, respectively, which illustrates much improved compared previous reports. not only...