The monolithically integrated self-driven photoelectric detector (PD) with the light-emitting diode (LED) epitaxial structure completely relies on built-in electric field in multi-quantum wells region to separate photogenerated carriers. Here, we propose a novel superlattices–electron barrier layer expand potential and enhance detection capability of PD. PD exhibits record-breaking photo-to-dark current ratio 5.14 × 107, responsivity 110.3 A/W, specific detectivity 2.2 1013 Jones at 0 V...

A three-dimensional (3D) display provides an immersive user experience and represents the frontier of technology. The 3D based on polarizer films is relatively mature. However, currently used lead to bulk systems low efficiency. Micro-light-emitting diodes (micro-LEDs) have advantages small size, high contrast, power consumption, response frequency. micro-LED displays combine characteristics micro-LEDs simultaneously, which can be in portable electronics or projectors users with experience....

The demand for effective sterilization methods, particularly in the wake of Covid-19 pandemic, has sparked interest use deep ultraviolet (DUV) radiation disinfection. high risk skin/eye exposure to high-energy DUV requires integration and visible (VIS) LED chips sterilize indicate its operation simultaneously portable devices. However, conventional double-chip suffers from power consumption fabrication complexity. This study sets out explore monolithic VIS LEDs radiative application. is...

In this work, we present a stress-free AlN film with improved crystal quality assisted by h-BN and demonstrate the mechanical exfoliation of wafer-scale single-crystal freestanding membrane reveal controllable mechanism AlN. Uniform continuous is directly grown on c-plane sapphire using flow modulation epitaxy mode metal-organic chemical vapor deposition. The nucleation evolution processes quasi-van der Waals (QvdWE) are revealed. It found that O2-plasma-treated can effectively promote...

Abstract Polariton lasing via Bose‐Einstein condensation (BEC) provides a peculiar method to achieve low threshold coherent light sources. Until now, the cryogenic operating temperature required for polariton lasers has hampered development of polaritonics. Here, novel approach is first reported realize ultra‐narrow linewidth under quasi‐3D quantum confinement at room‐temperature (RT). The potential trap landscape constructed by ring‐shaped optical excitation, wherein continuum dispersion...

This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on substrates. Using bulge testing combined with a refined load-deflection model long rectangular membranes, which takes into account bending stiffness prestress membrane material, Young's modulus, prestress, strength for 3C-SiC thicknesses 0.40 1.42 mum were extracted. The stress distribution in membranes under load was calculated analytically. prestresses two 322 plusmn 47 201 34...

We report a selective area growth (SAG) method to define the p-GaN gate of AlGaN/GaN high electron mobility transistors (HEMTs) by metal-organic chemical vapor deposition. Compared with Schottky HEMTs, SAG HEMTs show more positive threshold voltage (Vth) and better control ability. The influence Cp2Mg flux on has also been studied. With increasing from 0.16 μmol/min 0.20 μmol/min, Vth raises −0.67 V −0.37 V. maximum transconductance HEMT at drain 10 is 113.9 mS/mm while that value 51.6...

Micro-light-emitting diodes (Micro-LEDs) are considered as the most promising display technologies, while 3D can provide users with an immersive visual experience and represents cutting-edge technology. Polarized Micro-LEDs be used for polarization-based In our previous work, circularly polarized linearly have been reported, yet extinction ratio (ER) still needs to further improved. The high proportion of sidewalls emission Micro-LED hinders improvement polarization. this we numerically...

Dual-atom catalysts (DACs) have recently been active in various catalytic fields, such oxygen reduction reaction, but the underlying mechanism of synergistic effect DACs regulating performance...

The origin of anomalous luminescence efficiency enhancement short-term aged GaN-based blue light-emitting diodes was studied. We found that the intensity electroluminescence and photoluminescence spectra were both increased in very beginning period aging. With help a rate-equation model, we concluded this kind is joint effect defect reduction active layers changes out layers, for example Mg acceptor annealing.

In this work, low frequency noise in β-Ga2O3 nanowire-based (NW) electronic devices is analyzed, which exhibits different behaviors as the device size scales down. The spectrum for narrower NW (∼80 nm) closer to 1/f characteristics, whereas it starts show evident 1/f2 components gets thicker (∼200 nm), giving clear signs of distinctive features bunch traps at interface or bulk. Our results that these seems predominantly originated from an aggregated effect intricate trap states close surface...

The effect of patterned sapphire substrate (PSS) on the top-surface (P-GaN-surface) and bottom-surface (sapphire-surface) light output power (LOP) GaN-based LEDs was investigated, in order to study changes reflection transmission GaN-sapphire interface. Experimental research computer simulations were combined reveal a great enhancement LOP from either top or bottom surface LEDs, which are prepared substrates (PSS-LEDs). Furthermore, results compared those conventional planar (CSS-LEDs). A...

The effect of periodic delta-doping and modulation-doping on high Al content n-AlxGa1−xN (x = 0.55) epilayers grown by MOCVD has been investigated. Measured XRD, AFM, contactless sheet resistance, Hall-effect tests, δ-doped modulation-doped have better crystal quality, surface morphology electrical properties as compared with uniformly-doped n-AlxGa1−xN. These improvements are attributed to the SiNx growth mask induced δ-doping layers dislocation-blocking both techniques. In addition, due...

Genomic selection (GS) is a sophisticated breeding technology that utilizes genomic markers in conjunction with phenotypic data to predict values and phenotypes of candidate populations. The foundation GS the construction precise prediction (GP) models. Traditional GP models, which are typically linear nature, encounter difficulties capturing non-linear relationships within genetic data, thereby constraining their capacity adequately characterize complex architectures. To address this...

With an n-AlGaN (4 nm)/GaN nm) superlattice (SL) inserted between n-GaN and InGaN/GaN multiquantum well active layer, the efficiency droop of GaN-based LEDs has been improved. When injection current is lower than 100 mA, lumen LED with n-AlGaN/GaN SL relatively small compared to that without SL. However, as increases more surpasses The wall plug same trend efficiency. improvement SLs can be attributed a decrease in electron leakage due enhanced spreading ability blocking effect at high...

Diamond materials hold great potentials with favorable characteristics for betavoltaic cells, thanks to their simple structure, high conversion efficiency, and radiation robustness. However, explore its efficiency limit is greatly hindered by the material growth, doping techniques, device design as well. In this work, a model based on diamond metal/intrinsic/p-type (MIP) Schottky barrier architect analyzed an accurate prediction of cell such structure. The study takes various factors...

Utilizing Technology Computer Aided Design (TCAD) software, this study determines the optimal thickness and doping concentration for intrinsic gallium nitride (GaN) layer in a p-i-n GaN diode to improve detection efficiency reliability. The examines energy loss transient current response induced by alpha 3H particles within diode. Additionally, TCAD elucidates behavior arising from electron-hole pair generation, utilizing Stopping Range of Ions Matter SRIM-2013 linear transfer distribution...

Abstract High-temperature-annealing AlN (HTA-AlN) templates have a large number of AlxOyNz islands which roughen the surface and affect following regrowth. To achieve smooth high-quality regrown films, various cleaning technologies for HTA-AlN were investigated. Conventional alkaline or acidic chemical has poor effect on improving many V-pits appeared regrown-AlN surface. On other hand, thermal could remove adequately thus improve morphology. Furthermore, layer after less than 0.2 nm...

In this work, we first proposed an innovation on GaN p-type reflective electrode in flip-chip LEDs (FCLEDs) using a novel method so called electroless silver plating (ESP). our ESP method, use chemical way to form perfect Ag reflector, differ from traditional fabrication of electron beam deposition (EB). Under investigation, the formed by possesses better optical and electric characteristics. Compared with EB, reflectance over whole visible light spectrum was 93%, higher than EB samples,...

Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low-pressure chemical vapor deposition (LPCVD) reactor with SiH/sub 4/ and C/sub 2/H/sub at temperature 1500 C pressure 20 torr. The surface morphology intentional in-situ NH/sub 3/ doping epilayers were investigated by using atomic force microscopy (AFM) secondary ion mass spectroscopy (SIMS). Thermal oxidization homoepitaxial layers conducted dry O/sub 2/ H/sub atmosphere...

Distributed service is an effective way to solve the massive user services. However, dynamic combination of services can lead uncertainty in service, what' s more, a large number service's data inefficiency anomaly detection service. So it increases difficulty detection. This paper inspired by biological processes artificial immune recognizing abnormality and propose method which dynamically detect distributed abnormal. First all, we abnormal source through numerical differentiation method....