A5058903146- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Copper Interconnects and Reliability
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Hydrocarbon exploration and reservoir analysis
- Seismic Imaging and Inversion Techniques
- Advanced ceramic materials synthesis
- GaN-based semiconductor devices and materials
- Silicon and Solar Cell Technologies
- Hydraulic Fracturing and Reservoir Analysis
- Metal and Thin Film Mechanics
- Graphene research and applications
- Geological and Geophysical Studies
- Semiconductor Quantum Structures and Devices
- Acoustic Wave Resonator Technologies
- Organic Electronics and Photovoltaics
- Diamond and Carbon-based Materials Research
- Geological formations and processes
- Advancements in Semiconductor Devices and Circuit Design
- Organic Light-Emitting Diodes Research
- Traditional Chinese Medicine Studies
- Diabetic Foot Ulcer Assessment and Management
- Reservoir Engineering and Simulation Methods
- Molecular Junctions and Nanostructures
Institute of Semiconductors
2015-2024
Chinese Academy of Sciences
2015-2024
University of Chinese Academy of Sciences
2017-2024
Schweizerisches Universitäres Institut für Traditionelle Chinesische Medizin
2023-2024
Research Institute of Petroleum Exploration and Development
2009-2023
Academy of Opto-Electronics
2021
Beijing Normal University
2020
Xiamen University
2020
First Affiliated Hospital of Gannan Medical University
2018
Petro-Canada
2010
Al2O3 films were prepared by atomic layer deposition using trimethylaluminum and H2O at 250 °C on 4H-SiC substrates annealed 1000 in N2. The as-deposited measured analyzed near the Al2O3/SiC interfaces an X-ray photoelectron spectroscopy (XPS) with etching processing. XPS results showed that O-rich converted to anhydride after Si suboxides found both interfaces. Energy band shift between was annealing. conduction offsets of as-grown 1.90 1.53 eV, respectively. These demonstrated can be a...
The thermal stability of the standard Ni/SiC and a TiW/Ni/SiC Ohmic contacts was investigated compared after being aged at 400 °C in N2 atmosphere. contact characterized using combination I-V measurements, optical microscopic imaging, X-ray diffraction (XRD), Auger electron spectroscopy (AES) techniques. It is shown that failed for 20 h atmosphere, while could stand 100 h. found kept smooth surface morphology during rapid annealing aging process, metal rougher. Both deteriorations high...
This study aims to analyze the current research status of acupuncture in treatment mild cognitive impairment (MCI) using bibliometric methods, explore hotspots, and predict future trends.Literature on for MCI China National Knowledge Infrastructure (CNKI) Web Science (WOS) databases were searched from their inception December 31, 2022. Articles then filtered inclusion exclusion criteria imported into VOSviewer 1.6.11 CiteSpace 6.1.6msi software descriptive analysis publication numbers,...
Bismuth ferrite (BiFeO3) thin films were grown by atomic layer deposition (ALD) combining ALD of Bi2O3 and Fe2O3 monitored in-situ quartz crystal microbalance (QCM). The physical chemical mechanisms BiFeO3 studied according to the results QCM indicate that Bi–O Fe–O self-limited molecular sizes precursors absorption between hydroxyl groups. Pure Bi3+ Fe3+ with ratio 1:1 formed during ALD, no evaporation Bi atoms was found at 250 °C X-ray photoelectron spectroscopy (XPS). rhombohedral phase...
This paper reports the mechanical properties and fracture behavior of silicon carbide (3C-SiC) thin films grown on substrates. Using bulge testing combined with a refined load-deflection model long rectangular membranes, which takes into account bending stiffness prestress membrane material, Young's modulus, prestress, strength for 3C-SiC thicknesses 0.40 1.42 mum were extracted. The stress distribution in membranes under load was calculated analytically. prestresses two 322 plusmn 47 201 34...
Ultrathin Al combined with a buffer layer of MoO3 doped perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) has been demonstrated as an efficient semitransparent anode in OLED. The ITO-free OLED utilizing this composite exhibits low turn on voltage 2.6 V and high current efficiency 5.6 cd A−1. Based accelerated degradation tests, device half-life about 945 h was obtained at initial luminance 100 m−2. charge transfer (CT) complexes formed between PTCDA played critical role promoting hole...
The effect of high-temperature annealing on AlN thin film grown by metalorganic chemical vapor deposition was investigated using atomic force microscopy, Raman spectroscopy, and deep ultra-violet photoluminescence (PL) with the excitation wavelength as short ∼ 177 nm. Annealing experiments were carried out in either N2 or vacuum atmosphere temperature ranging from 1200 °C to 1600 °C. It is found that surface roughness reduced compressive strain increased increasing both atmospheres. As...
Space charge capacitance and the physical mechanism of negative in organic light-emitting diodes (OLEDs) by transient current response analysis are investigated for first time.
A reverse-channel 4H-SiC trench gate metaloxide-semiconductor field-effect transistor (UMOSFET) (RC-MOS) is proposed in this article. The RC-MOS demonstrated to have low specific ON-resistance (RON,sp) by numerical simulation. oxide the fully protected n+ source, p-shield, and p-base regions. Thus, a reduced corner field far below 3 MV/cm can be achieved both OFFand ON-state. Furthermore, gate-to-drain charge (QGD) of 33 nC/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...
The free carrier density and mobility in n-type 4H-SiC substrates epilayers were determined by accurately analysing the frequency shift full-shape of longitudinal optic phonon—plasmon coupled (LOPC) modes, compared with those Hall-effect measurement that provided vendors. transport properties thick thin grown both vertical horizontal reactors also studied. ranges between 2×1018 cm−3 8×1018 a 30–55 cm2/(V·s) for 1× 1016−3×1016 290–490 reactor, while reactor have slightly higher concentration...
Facile utilization of polyethylene (PE) film as both the supporting material for graphene transfer from copper foil and target substrate flexible strain sensor preparation in a single route.
Annealing effects on structural and compositional performances of Al2O3 thin films 4H–SiC substrates are studied comprehensively. The grown by atomic layer deposition through using trimethylaluminum H2O as precursors at 300 °C, annealed various temperatures in ambient N2 for 1 min. film transits from amorphous phase to crystalline annealing temperature increases 750 °C 768 °C. refractive index with rising, which indicates that densification occurs during annealing. grain formation the upon...
Abstract High-quality AlN/sapphire templates were fabricated by the combination of sputtering and high-temperature (HT) annealing. The influence parameters including nitrogen flux, radio frequency power, substrate temperature on crystalline quality surface morphology annealed AlN films investigated. With lower temperature, N 2 full width at half maximum X-ray rocking curve for (0002) (10 2) improved to 97.2 259.2 arcsec after This happens because increased vacancy concentration sputtered can...
We investigate the triangular defects with different structural features on 4H-SiC epilayers by a Nomarski microscope, Candela optical surface analyzer and ultraviolet photoluminescence (UV-PL) imaging. Both foreign particles substrate scratches can cause formation of obtuse defects. The central area some have spatially confined core, in which in-grown stacking faults be observed under UV-PL In contrast, induced appear form band-like defects, width depends scratch direction reaches maximum...
Interfacial properties and energy-band alignment of annealed AlN dielectric films on Si-face 4° off-axis 4H–SiC substrates were characterized demonstrated by x-ray photoelectron spectroscopy (XPS) current-electric field (I–E) measurements. The XPS results reveal that the Al–O bonds silicon suboxides can convert into more stable Al–N Al–O–Si at AlN/4H–SiC interface under 1000 °C annealing. variations in both oxygen-rich composition crystallinity make annealing-dependent conduction band...
Background: With the increasing global prevalence of hypertension, a condition that can severely affect multiple organs, there is growing need for effective treatment options. Uncaria rhynchophylla-Alisma plantago-aquatica L. (UR-AP) traditional drug pair used treating hypertension based on liver-kidney synergy concept. However, detailed molecular mechanisms underlying its efficacy remain unclear. Methods: This study utilized an integrative approach combining network pharmacology, cluster...