Energy-saving white lighting from the efficient intrinsic emission of semiconductors is considered as a next-generation source. Currently, white-light can be composited with blue light-emitting diode and yellow phosphor. However, this solution has an inevitable light loss, which makes improvement energy utilization efficiency more difficult. To deal problem, (IWE) in single solid material gives possibility. Here, all-inorganic lead-free CsCu2 I3 perovskite crystal (SC) stable high...

Over the past two decades, solar- and astrophysicists material scientists have been researching developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption small size for replacing traditional heavy high-energy-consuming microchannel-detection systems, to study formation evolution of stars. However, most desirable VUV photovoltaic detector capable achieving zero has not yet achieved. With high-crystallinity multistep epitaxial grown AlN as a...

Solar-blind ultraviolet (SBUV) detection has important applications in wireless secure communication, early warning, and so forth. However, the desired key device for SBUV high-sensitivity low-noise "sandwich" photodetector with large detective area is difficult to be fabricated because it usually hard traditional wide band gap semiconductors boast both high conductivity transparency. Here, we proposed use graphene as transparent conductive layer form graphene/β-Ga2O3 heterojunction. With...

Low-dimensional metal halide perovskites possessing a large exciton binding energy have shown great promise in achieving efficient photonic emission required the fields of lighting sources and display. Here, dual self-trapped (STE) emissions are directly observed low-dimensional inorganic copper iodine quasi-perovskite single crystal. The STEs natural structure-oriented performance, showing strong electron–phonon coupling. Temperature-dependent PL spectra Raman demonstrate thermal-assisted...

Abstract A new strategy of constructing an additional heterojunction on the surface epitaxially grown Ga 2 O 3 film with a distorted lattice is proposed to solve problem low external quantum efficiency (EQE) in traditional photovoltaic devices. Experimentally, organic–inorganic hybrid poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate/Ga /p‐type Si solar‐blind ultraviolet (SBUV) detector constructed achieve ultrahigh EQE ≈15% at 0 V bias, which 1–2 orders magnitude higher than that...

Over the past 20 years, astro and solar physicists have been working hard to develop a new-generation semiconductor-based vacuum-ultraviolet (VUV, 100-200 nm) photodetector with small size low power consumption, replace traditional microchannel detection system, which is ponderous has high energy finally reduce load launch costs of explorer satellites. However, this expectation hardly achieved due relatively photoresponsivity external quantum efficiency (EQE) reported VUV photoconductive...

A new, simple, and replicable solution method is reported for the growth of 2D materials. Importantly, has no particular requirement on substrate, so metals, glass, silicon, sapphire, flexible organics, other wafers insoluble in water are all applicable this method. Such compatibility cannot be achieved by methods. As a service to our authors readers, journal provides supporting information supplied authors. materials peer reviewed may re-organized online delivery, but not copy-edited or...

Abstract Vacuum‐ultraviolet (VUV) photodetection is effective in probing the evolution and eruption of solar storms which are destructive to power transmission communication systems. To realize real‐time monitoring storms, astro‐ physicists dedicated developing zero‐energy‐consumption VUV photovoltaic devices with high sensitivity. However, due lack transparent electrodes high‐quality photosensitive materials, desired rapid temporal response rarely reported. Here, graphene used as electrode,...

Wide band gap CsPb₂Br₅ flake single crystals have been successfully obtained and demonstrated to potential applications in deep-UV photodetection.

Graphene (Gr) has been widely used as a transparent electrode material for photodetectors because of its high conductivity and transmittance in recent years. However, the current low-efficiency manipulation Gr hindered arraying practical use such detectors. We invented multistep method accurately tailoring graphene into interdigital electrodes fabricating sensitive, stable deep-ultraviolet photodetector based on Zn-doped Ga2O3 films. The fabricated exhibits series excellent performance,...

Flexible cameras are important early warning wearable devices to protect security personnel from dangerous events.

Cs 3 Cu 2 I 5 and CsCu with a low-dimensional electronic structure strong electron–phonon coupling exhibit broad spectrum emission high PLQY, which may originate from self-trapped exciton or excited-state reorganization.

Abstract Large-size scintillators with high efficiency and ultrafast radiation fluorescence have shown more potential in the applications to ionizing detection of medical diagnosis, nuclear control high-energy physics. Currently, although traditional made tremendous progress scintillation efficiency, there are still challenges left lifetime. Faced that problem, we adopted 2-inch ZnO as substrate doped gallium activator realize an excited by α-ray, which decay time is only 600 ps shortest...

To lower the launch cost and prolong lifetime of a deep space explorer, solar- astrophysicists photonics scientists have devoted much time energy in exploring developing compact low-power-consumption semiconductor-based vacuum ultraviolet (VUV) photodetector. However, target has not yet been achieved due to lack high external quantum efficiency (EQE) VUV photoconductive materials. Here, we found that two-dimensional MgO, obtained via conformal anneal synthesis method, had ultrasensitive...

Here, we reported a low-cost and high-compatibility one-step liquid-phase synthesis method for synthesizing high-purity CsPbBr3 micro-/nanoflake single crystals. On the basis of CsPbBr3, further prepared low-dimensional photodetector capable balanced photodetection, involving both high external quantum efficiency rapid temporal response, which is barely realized in previously photodetectors.

Millimeter-sized Cs4PbBr6 bulk single crystal that has no green luminescence was successfully grown from concentrated CsBr aqueous solution for the first time. Absorption spectrum indicates an optical absorption starting 3.6 eV and a localized in range of 3.8–4.2 eV. Photoluminescence clearly shows emission. Along with calculated electronic band structure, it is concluded wide bandgap Through vacuum annealing treatment, original nongreen-luminescent activated, which possibly due to formation...

Deep ultraviolet (DUV) photodetectors have wide-range applications in satellite communications, air purification, and missile-plume detection. However, the critical barriers for currently available wide-band gap semiconductor film-based DUV are their low efficiency, complicated processes, lattice mismatch with substrate. Quantum dot (QD) devices prepared using solution-based methods can solve these problems. so far, there no reports on photovoltaic-type QDs. In this study, we propose a novel...

Tunable valence state and scintillation properties from Ce-doped gadolinium aluminoborosilicate glass scintillators for high-energy physics applications.

As one of the ideal tools for monitoring formation and evolution solar storms, vacuum ultraviolet (VUV) detector should have both a fast temporal response an array structure that enables image formation. Here, by combining nontraditional graphene processing technique with traditional metal organic chemical vapor deposition epitaxy technology, we created hybrid heterostructure (HH) arrays p-Gr/AlN/p-Si VUV photovoltaic capability silicon integration potential. The HH not only exhibit...

Unlike traditional three-dimensional semiconductors, when van der Waals semiconductors are integrated to other materials, "lattice mismatch" in the vertical direction can be avoided because there is no dangling bond on their plane surfaces. Here, taking full advantage of benefit heterostructure, we constructed first vacuum-ultraviolet photovoltaic device graphene/hexagonal boron nitride (h-BN)/silicon carbide (SiC), which shows ultrahigh performance VUV photodetection and expected meet...

Recently, deep ultraviolet (DUV) detectors based on gallium oxide (Ga2O3) have become promising in industrial and aerospace applications because of their inherently ultrawide band gaps (4.5-4.9 eV). Because most them are difficult to be prepared, the lattice mismatch with substrate expensive cost taken into consideration. such problems, solution-processible nanodots (NDs) ultrasmall size provide a solution. Here, we propose use γ-Ga2O3 NDs as DUV-sensitive layer construct DUV p-i-n-type...

Abstract Phosphorescence is a fascinating photoelectronic phenomenon usually observed in rare-earth-doped inorganic crystals and organic molecular crystals, owning great potential optical information storage, color display biological dosimetry. Here, we present an ultralong intrinsic phosphorescence (>20,000 seconds) AlN single-crystal scintillator through X-ray excitation. We suggest that the long afterglow emission originates from intra-band transition related to native nitrogen...

Highlights•An open-circuit voltage up to 2.45 V is achieved by the graphene heterojunction device•An efficient band assembly designed induce larger quasi-Fermi level splitting•An EQE as high 56.1% (172 nm) and a rise time short 45 ns are achieved•The adopted effect provides referential way for various photovoltaic devicesSummaryOwing fast response speed low energy consumption, vacuum-ultraviolet (VUV) photodetectors show prominent advantages in field of space science, high-energy physics,...