A5049341926- Ga2O3 and related materials
- 2D Materials and Applications
- Advanced Sensor and Energy Harvesting Materials
- Perovskite Materials and Applications
- Gas Sensing Nanomaterials and Sensors
- ZnO doping and properties
- Organic Electronics and Photovoltaics
- Advanced Photocatalysis Techniques
- Graphene research and applications
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Polydiacetylene-based materials and applications
- Block Copolymer Self-Assembly
- Thin-Film Transistor Technologies
- Color Science and Applications
- Surface Modification and Superhydrophobicity
- Organic Light-Emitting Diodes Research
- Adhesion, Friction, and Surface Interactions
- Conducting polymers and applications
- Quantum Dots Synthesis And Properties
- Ferroelectric and Negative Capacitance Devices
- Surface Chemistry and Catalysis
- Infrared Target Detection Methodologies
- Modular Robots and Swarm Intelligence
University of Chinese Academy of Sciences
2022-2024
Institute of Semiconductors
2022-2024
Chinese Academy of Sciences
2022-2024
Abstract Low‐dimensional ultrawide bandgap semiconductors demonstrate great potential in fabricating solar‐blind ultraviolet photodetectors. However, the widespread use of detectors is still limited by low responsivity, large noise, and dark current, especially few can fulfill detection polarization dependence simultaneously. Herein, a sensitive photodetector based on ultrathin KNb 3 O 8 nanobelts synthesized via chemical vapor deposition growth, reported. By selecting suitable substrate...
The intentionally designed band alignment of heterostructures and doping engineering are keys to implement device structure design performance optimization. According the theoretical prediction several typical materials among transition metal dichalcogenides (TMDs) group-IV chalcogenides, MoS2 SnSe2 present largest staggered offset. large offset is conducive separation photogenerated carriers, thus /SnSe2 a theoretically ideal candidate for fabricating photodetector, which also verified in...
Abstract Remote sensing technology, which conventionally employs spectrometers to capture hyperspectral images, allowing for the classification and unmixing based on reflectance spectrum, has been extensively applied in diverse fields, including environmental monitoring, land resource management, agriculture. However, miniaturization of remote systems remains a challenge due complicated dispersive optical components spectrometers. Here, m‐phase GaTe 0.5 Se with wide‐spectral photoresponses...
Solar-blind ultraviolet (UV) detection plays a critical role in imaging and communication due to its low-noise background, high signal-to-noise ratio, strong anti-interference capabilities. Detecting the polarization state of UV light can enhance image information expand dimension. Although is explored visible infrared light, applied fields such as astrophysics submarine seismic wave detection, solar-blind remains largely unreported. This primarily challenge creating polarizers with...
Abstract Organic–inorganic halide perovskite solar cells (PSCs) have attracted significant attention in photovoltaic research, owing to their superior optoelectronic properties and cost‐effective manufacturing techniques. However, the unbalanced charge carrier diffusion length materials leads recombination of photogenerated electrons holes. The inefficient collecting process severely affects power conversion efficiency (PCE) PSCs. Herein, a solution‐processed SnO 2 array electron transport...
Organic semiconductor single-crystal (OSSC) patterns with precisely controlled orientation are of great significance to the integrated fabrication devices high and uniform performance. However, it is still challenging achieve purely oriented OSSC due complex nucleation growth process OSSCs. Here, a general direct writing approach presented readily obtain high-quality unique orientation. In specific, method demonstrated wherein microscale meniscus manipulated, which makes possible control...
Abstract 2D organic semiconductor crystals (2D OSCs) are vital for high‐performance electronic and optoelectronic devices owing to their unique material merits. However, it is still challenging fabricate high‐quality large‐scale ultrathin OSCs with controllable molecular layers due the disordered deposition uncontrollable mass transport in solution‐processing fabrication. Here, a vapor‐induced meniscus modulating strategy preparing unidirectional stable Marangoni flow guide contactless...
Band alignment engineering is crucial for facilitating charge separation and transfer in optoelectronic devices, which ultimately dictates the behavior of Van der Waals heterostructures (vdWH)-based photodetectors light emitting diode (LEDs). However, impact band offset vdWHs on important figures merit devices has not yet been systematically analyzed. Herein, regulation WSe
Abstract Facing the future development trend of miniaturization and intelligence electronic devices, solar‐blind photodetectors based on ultrawide‐bandgap 2D semiconductors have advantages low dark current, high signal‐to‐noise ratio, as well features micro‐nanometer multi‐functionalization material which potential applications in photoelectric sensor part high‐performance machine vision systems. This study reports a oxide semiconductor, AsSbO 3 , with an ultrawide bandgap (4.997 eV for...
β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> is expected to achieve polarization detection in the solar-blind ultraviolet due its ultra-broad bandgap and anisotropic crystal structure. In this work, we theoretically analyze physical mechanism of from probabilities electron transition. The photodetector with a Schottky photodiode structure has maximum responsivity 1.1 A/W...
For low-dimensional materials, the in-plane anisotropy of their structure can realize detection polarized light. This characteristic be utilized to fabricate polarization-sensitive photodetectors without polarizers. It is conductive miniaturization and integration devices. As a typical IV-VI group material, GeSe easy synthesized by chemical vapor transport method, has obvious response light in visible near-infrared band. In this study, GeSe-based photodetector was fabricated. The sensitivity...
The submarine-confined bubble swarm is considered an important constraining environment for the early evolution of living matter due to abundant gas/water interfaces it provides. Similarly, spatiotemporal characteristics confinement effect in this particular scenario may also impact origin, transfer, and amplification chirality organisms. Here, we explore on chiral hierarchical assembly amphiphiles confined array stabilized by micropillar templates. Compared with other conditions, yields a...
The nanopipes in GaN films grown on sapphire substrates using metal-organic chemical vapor deposition were identified as leakage-related defects through investigations by PeakForce tunneling atomic force microscopy. An insertion layer of n-Al0.03Ga0.97N can prevent from extending, thereby reducing the leakage current Schottky diodes. By analyzing element’s distribution and out epitaxial wafers, it is inferred that segregation Ga around may be responsible for leakage.
Precise control of molecular assembly is great significance in the application functional molecules. This work has systematically investigated humidity effect bubble-assisted assembly. finds critical evolution soft confined space, leading to formation microscale liquid space under high humidity, and nanoscale low humidity. It also revealed that differences surface wettability adhesion play key role. Consequently, a flat pattern with thermodynamically favorable ordered structure sharp...
Multi-modal electronics skin that mimics collaborative operation of natural establishes a substantial foundation for next-generation smart healthcare, biomimetic science and related interdisciplinary fields. However, the power consumption multi-channels decoupling complexity fused-information determine effectiveness system still remain enormous challenge. Here, bimodel self-powered optoelectronic fusion with vertical integration structure to achieve mechanical illumination perception is...
Interface engineered ferroelectricity in van der Waals heterostructures is of broad interest both fundamentally and technologically for the applications neuromorphic computing so on. In particular, moir\'e graphene/hexagonal boron nitride (hBN) driven by charge ordering instead traditional lattice displacement has drawn considerable attention because its fascinating properties promising high-frequency programmable electrical polarization switching. Yet, underlying mechanism electronic still...
<title>Abstract</title> <bold>Moiré ferroelectricity in graphene/hexagonal boron nitride (hBN) heterostructures driven by charge ordering instead of traditional lattice displacement has drawn considerable attention because its fascinating properties and promising applications neuromorphic computing so on. Combining the interface engineered strong correlations moiré could enable realization novel quantum states such as ferroelectric superconductivity multiferroicity. Here we study electronic...
β-Ga 2 O 3 nanosheets are prepared by GaSe oxidation, and the thickness dependence of their photodetectors investigated. The operational stability devices improved decreasing thickness.
Solar-Blind Ultraviolet Photodetectors In article number 2111673, Xiaosheng Fang, Zhongming Wei, Hua Xu, and co-workers fabricate a polarization sensitive solar-blind ultraviolet photodetector based on ultrathin KNb3O8 nanobelts synthesized via chemical vapor deposition growth. The device exhibits superior photodetection performance in the region (230–280 nm) with high responsivity (30 A W−1) large linear dichroic ratio (1.62).
Abstract Quantum computing is expected to break the power bottleneck with help of quantum superposition and entanglement. In order fabricate fault-tolerant computers for encoding information, it important improve cryogenic mobility silicon-based metal oxide semiconductor field effect transistors (MOSFETs) a thin gate dielectric layer as much possible. Based on SiO 2 /HfO stacked dielectric, we investigate post-deposition annealing (PDA) temperature MOSFET transport properties. The results...
Machine Vision In article number 2306241, Xinghua Wang, Zhongming Wei, Juehan Yang, and co-workers present photodetectors based on AsSbO3 nanosheets that are able to realize highly selective high-performance detection in the solar-blind ultraviolet band, benefiting from ultra-wide bandgap. Owing remarkable anisotropic crystal structure, also shows significant linear dichroism nonlinear optical properties.