A5045166423- 2D Materials and Applications
- Graphene research and applications
- Magnetic and transport properties of perovskites and related materials
- Quantum and electron transport phenomena
- Rare-earth and actinide compounds
- Magnetic Properties of Alloys
- Magnetic properties of thin films
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Nanowire Synthesis and Applications
- Heusler alloys: electronic and magnetic properties
- Thermal properties of materials
- Quantum Dots Synthesis And Properties
- Molecular Junctions and Nanostructures
- Magnetic Properties and Synthesis of Ferrites
- Perovskite Materials and Applications
- Inorganic Chemistry and Materials
- Chalcogenide Semiconductor Thin Films
- Advanced Condensed Matter Physics
- Organic and Molecular Conductors Research
- Ferroelectric and Negative Capacitance Devices
- Quantum Mechanics and Non-Hermitian Physics
Tsinghua University
2023-2024
Peking University
2020-2024
State Key Laboratory of Low-Dimensional Quantum Physics
2024
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics
2023
Institute for Condensed Matter Physics of the National Academy of Sciences of Ukraine
2020
Abstract Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron mobility µ e than silicon but suffers from much lower hole h ( / = 80), thus unsuited to CMOS application with single material. Through accurate ab initio quantum‐transport simulations, performance gap between NMOS and PMOS is significantly narrowed predicted even vanished in sub‐2‐nm‐diameter gate‐all‐around...
Antiferromagnetism within the two-dimensional (2D) family offers a platform for spintronics. The emergent 2D semiconductor ${\mathrm{Cr}\mathrm{PS}}_{4}$ is proved to be composed of ferromagnetic layers with antiferromagnetic coupling along stacking direction in experiment. By using first-principles quantum-transport simulation, we evaluate spin-resolved transport magnetic tunnel junction built by barrier large thickness ranges. We find magnetoresistance generally increases number from 140%...
The gate-all-around (GAA) $\mathrm{Si}$ nanowire (NW) field-effect transistor (FET) is considered one of the most promising successors current mainstream fin FET (FinFET) owing to its better electrostatic gate control. Experimentally, diameter NWs has been scaled down 1 nm. In this paper, performance limit GAA NWFET with a 1-nm investigated by utilizing ab initio quantum transport simulations. We prove that electrical conduction concentrated in core ultranarrow wire channel. minimum length...
Two-dimensional \ensuremath{\alpha}-${\mathrm{In}}_{2}{\mathrm{Se}}_{3}$ has drawn broad attention due to its high photoresponse and unique room-temperature interlocked in-plane out-of-plane ferroelectricity with an ultralow switching electric field. Here, we investigate the in a lateral monolayer (ML) p-i-n junction by using ab initio quantum transport simulations. The maximum photoresponses of are up 69.2 31.6 mA/W for ferroelectric wurtzite zincblende phases (shortly named WZ' ZB')...
We introduce a concept of full electrical control four states in vdW sliding multiferroic tunnel junction with giant TMR and sizeable TER. The STT writing current is one order magnitude smaller than traditional bulk counterparts.
As the family of magnetic materials is rapidly growing, two-dimensional (2D) van der Waals (vdW) magnets have attracted increasing attention as a platform to explore fundamental physical problems magnetism and their potential applications. This paper reviews recent progress on emergent vdW compounds applications in devices. First, we summarize current synthetic methods. Then, focus structure modulation properties by analyzing representative with different structures. In addition, pay...
Recently synthesized two-dimensional (2D) van der Waals (vdW) ferromagnets, ${\mathrm{Fe}}_{x}{\mathrm{Ge}\mathrm{Te}}_{2}$ (x = 4 and 5), have attracted great attention due to their room-temperature Curie temperature. By using ab initio noncollinear-spin quantum transport simulations, we predict a monotonic increasing tendency of the tunneling magnetoresistance (TMR) with \ensuremath{\theta} (the angle between spins two electrodes) in...
Two-dimensional (2D) van der Waals (vdW) magnetic semiconductors have attracted wide interest for their promising application in next-generation spintronic devices. We investigate the scaling behavior of tunnel magnetoresistance (TMR) $\mathrm{Ag}/$n-layer ${\mathrm{Cr}\mathrm{I}}_{3}/\mathrm{Ag}$ and graphite/n-layer ${\mathrm{Cr}\mathrm{I}}_{3}$/graphite junctions (MTJs) by using ab initio quantum-transport simulations. The calculated monotonic increasing TMR MTJ with n = 2--4 at zero bias...
The recently synthesized two-dimensional van der Waals (vdW) ferromagnet 1T-${\mathrm{MnSe}}_{2}$ has attracted great attention due to its room-temperature ferromagnetism. By using ab initio quantum transport simulations with noncollinear spins, we demonstrate a monotonic increasing (decreasing) tendency of the angle-resolved tunneling magnetoresistance (spin-transfer torque) graphene layer number n in ${\mathrm{MnSe}}_{2}$/n-layer graphene/${\mathrm{MnSe}}_{2}$ (n = 1--4) vdW magnetic...
Ferroelectric diodes can generate a polarization-controlled bidirectional photoresponse to simulate inhibition and promotion behaviors in the artificial neuromorphic system with fast speed, high energy efficiency, nonvolatility. However, existing ferroelectric based on oxides suffer from weak (below 1 mA/W), difficult miniaturization, large response photon (over 3 eV). Here, we design series of van der Waals...
Here we design a monolayer Fe<sub>3</sub>GeTe<sub>2</sub> spin-valve device by attaching two ends to ferromagnetic electrodes. A high magnetoresistance of ~ 390% is obtained and significantly increased 450 510% after the gates are introduced.
Abstract Recently, two‐dimensional (2D) magnetic van der Waals materials have drawn great attention as they are remarkably promising in numerous vital areas, such data storage and information processing. Theoretically, bilayer (BL) 2H‐VSe 2 has been predicted to be an A‐type 2D antiferromagnetic crystal (intralayer ferromagnetism interlayer antiferromagnetism) electrically‐induced half‐metallicity. Herein, by using ab initio quantum transport simulations, BL spin devices designed...
High thermal conductivity and ambipolar mobility are highly desirable for semiconductors in electronics have been observed bulk boron arsenide (BAs). In this work, we explore the scaling behavior of a monolayer hydrogenated BAs field-effect transistor (ML H-BAs FET) by employing ab initio quantum transport methods. Both armchair- zigzag-directed ML FETs can well satisfy requirements International Technology Roadmap Semiconductors even if gate length is scaled down to $2\ensuremath{\sim}3$ nm...
N\'eel spin current is defined as the staggered across different magnetic sublattices and can manipulate vector of antiferromagnet by its associated spin-transfer torques. Currently, it believed that currents are only generated through electrical driving in $\mathcal{PT}$-symmetric antiferromagnetic metals, which a linear effect. In this paper, we propose be induced nonlinear optical effect (spin photogalvanic effect) semiconductors. Using CrSBr ${\mathrm{CrI}}_{3}$ representatives, predict...
The burgeoning field of rare-earth (RE)-based van der Waals (vdW) layered magnets is driven by their potential in novel magnetism and spintronics applications. These materials exhibit exceptional spin-lattice coupling air stability, attributed to the strong spin-orbit substantial magnetic moments from 4f electrons. This study investigates structural properties dysprosium-based oxyhalide ternary compounds, DyOX (X=F,Br), which are prime candidates for multiphase transitions tunable anisotropy...