A5068268395- Quantum and electron transport phenomena
- Graphene research and applications
- 2D Materials and Applications
- Topological Materials and Phenomena
- Magnetic and transport properties of perovskites and related materials
- Magnetic properties of thin films
- Electronic and Structural Properties of Oxides
- Surface and Thin Film Phenomena
- Iron-based superconductors research
- Molecular Junctions and Nanostructures
- Boron and Carbon Nanomaterials Research
- Phase-change materials and chalcogenides
- Advanced Physical and Chemical Molecular Interactions
- GaN-based semiconductor devices and materials
- Machine Learning in Materials Science
- Rare-earth and actinide compounds
- Quantum Computing Algorithms and Architecture
- Chalcogenide Semiconductor Thin Films
- Advanced Chemical Physics Studies
- Advanced NMR Techniques and Applications
- Advanced Condensed Matter Physics
- Atomic and Subatomic Physics Research
- Multiferroics and related materials
- Ga2O3 and related materials
- Physics of Superconductivity and Magnetism
University of Groningen
2021-2024
University of North Texas
2019-2021
Superconducting and other Innovative Materials and Devices Institute
2016-2020
University of Łódź
2010-2019
Instituto de Ciencia de Materiales de Madrid
2014-2019
University of Chieti-Pescara
2018
Renishaw (United Kingdom)
2010
We use a tight-binding approach and density functional theory calculations to study the band structure of graphene/hexagonal boron nitride bilayer system in most stable configuration. show that an electric field applied direction perpendicular layers significantly modifies electronic whole system, including shifts, anticrossing other deformations bands, which can allow control value energy gap. It is shown biased may be tailored for specific requirements nanoelectronics applications. The...
The electric and nonvolatile control of the spin texture in semiconductors would represent a fundamental step toward novel electronic devices combining memory computing functionalities. Recently, GeTe has been theoretically proposed as father compound new class materials, namely ferroelectric Rashba semiconductors. They display bulk bands with giant Rashba-like splitting due to inversion symmetry breaking arising from polarization, thus allowing for spin. Here, we provide experimental...
We reveal through extensive DFT calculations, confronted to key experimental facts, the hidden penta-silicene nature of single and double strand chiral Si nanoribbons perfectly aligned on Ag(110) surfaces, that were discovered in 2005, but whose structure remained elusive. thus simultaneously demonstrate existence penta-silicene, a recently conjectured novel pentagonal silicon allotrope, which unveiled for 11 years, materializes paradigmatic shift from normal hexagonal silicene.
Direct and inverse spin Hall effects lie at the heart of novel applications that utilize spins electrons as information carriers, allowing generation currents detecting them via electric voltage. In standard arrangement, an applied field induces transverse current with perpendicular polarization. Although conventional are commonly used in spin-orbit torques or magnetoresistance experiments, possibilities to configure electronic devices according specific needs quite limited. Here, we...
We have performed a density functional study of graphene adsorbed on Au(111) surface using both local approximation and semiempirical van der Waals approach proposed by Grimme, known as the DFT-D2 method. Graphene physisorbed metal has linear dispersion preserved in band-structure, but Fermi level system is shifted with respect to conical points which results doping effect. show that type amount depends not only choice exchange-correlation used calculations, also supercell geometry models...
Transition metal dichalcogenides are known for their intriguing spin-valley effects, which can be harnessed through proximity in van der Waals heterostructures. Their hexagonal monolayers exhibit significant Zeeman band splitting of valence bands, reaching up to several hundred meV and giving rise spin textures that yield long lifetimes. However, this effect is suppressed the bilayers due inversion symmetry. The recent discovery sliding ferroelectricity ${MX}_{2}$ ($M=\mathrm{Mo}$, W;...
Ferroelectric Rashba semiconductors (FERSC) are a novel class of multifunctional materials showing giant spin splitting which can be reversed by switching the electric polarization. Although they excellent candidates as channels in field effect transistors, experimental research has been limited so far to semiconducting GeTe, ferroelectric is often prevented heavy doping and/or large leakage currents. Here, we report that CsBiNb2O7, layered perovskite Dion-Jacobson type, robust with...
Abstract Ferroelectric Rashba semiconductors (FERSCs) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees freedom responsible for several exceptional properties, including ferroelectric switching texture, suggests that the electron’s could be controlled by using only electric fields. In this regard, recent experimental studies revealing charge-to-spin interconversion phenomena in two prototypical FERSCs, GeTe SnTe, appear...
Chiral materials, similarly to human hands, have distinguishable right-handed and left-handed enantiomers which may behave differently in response external stimuli. Here, we use for the first time an approach based on density functional theory (DFT)+PAOFLOW calculations quantitatively estimate so-called collinear Rashba-Edelstein effect (REE) that generates spin accumulation parallel charge current can manifest as chirality-dependent charge-to-spin conversion chiral crystals. Importantly,...
Studies of structure-property relationships in spintronics are essential for the design materials that can fill specific roles devices. For example, with low symmetry allow unconventional configurations charge-to-spin conversion, which be used to generate efficient spin-orbit torques. Here, we explore relationship between crystal and geometry Rashba-Edelstein effect (REE) causes spin accumulation response an applied electric current. Based on a analysis performed 230 crystallographic space...
Abstract Fundamental research on two-dimensional (2D) magnetic systems based van der Waals materials has been gaining traction rapidly since their recent discovery. With the increase of knowledge, it become clear that such have also a strong potential for applications in devices combine magnetism with electronics, optics, and nanomechanics. Nonetheless, many challenges still lay ahead. Several fundamental aspects 2D are unknown or poorly understood, as often-complicated electronic structure,...
Electronic properties of the graphene layer sandwiched between two hexagonal boron nitride sheets have been studied using first-principles calculations and minimal tight-binding model. It is shown that for ABC-stacked structure in absence external field bands are linear vicinity Dirac points as case single-layer graphene. For certain atomic configuration, electric effect allows opening a band gap over 230 meV. We believe this mechanism energy tuning could significantly improve...
The helimagnet FeP is part of a family binary pnictide materials with the MnP-type structure which share nonsymmorphic crystal symmetry that preserves generic band characteristics through changes in elemental composition. It shows many similarities, including its magnetic order, to isostructural CrAs and MnP, two compounds are driven superconductivity under applied pressure. Here we present series high field experiments on quality single crystals FeP, showing resistance not only increases...
We present the results of a photon energy and polarization dependent angle-resolved photoemission spectroscopy (ARPES) study on high quality, epitaxial ${\mathrm{SrNbO}}_{3}$ thin films prepared in situ by pulsed laser deposition (PLD). show that Fermi surface is composed three bands mainly due to ${\mathrm{t}}_{2g}$ orbitals Nb $4d$, analogy with $3d$-based perovskite systems. The bulk band dispersion for conduction valence states obtained density functional theory (DFT) generally...
We present minimal depth circuits implementing the variational quantum eigensolver algorithm and successfully use it to compute band structure of silicon on a machine for first time.
Efficient generation and manipulation of spin signals in a given material without invoking external magnetism remain one the challenges spintronics. The Hall effect (SHE) Rashba-Edelstein (REE) are well-known mechanisms to electrically generate accumulation materials with strong spin-orbit coupling (SOC), but exact role strength type SOC, especially crystals low symmetry, has yet be explained. In this study, we investigate REE three different families nonmagnetic chiral materials, elemental...
The shape of the Fermi surface influences many physical phenomena in materials and a growing interest how spin-dependent properties are related to fermiology crystals has surged. Recently, novel current-dependent nonlinear magnetoresistance effect, known as bilinear magnetoelectric resistance (BMR), been shown be not only sensitive spin texture spin-polarized nonmagnetic materials, but also dependent on convexity topological semimetals. In this paper, we show that temperature dependence BMR...
One of the most exciting properties two dimensional materials is their sensitivity to external tuning electronic properties, for example via electric field or strain. Recently discovered analogues phosphorene, group-IV monochalcogenides (MX with M = Ge, Sn and X S, Se, Te), display several interesting phenomena intimately related in-plane strain, such as giant piezoelectricity multiferroicity, which combine ferroelastic ferroelectric properties. Here, using calculations from first...
A combined scanning tunneling microscopy, x-ray photoelectron spectroscopy, angle-resolved photoemission and density functional theory study of graphene on a Fe–Ir(111) alloy with variable Ir concentration is presented. Starting from an intercalated Fe layer between the Ir(111) surface we find that graphene–substrate interaction can be fine-tuned by Fe–Ir alloying at interface. When critical Ir-concentration close to 0.25 reached in layer, Dirac cone largely restored thereafter tuned across...
The recent discovery of hidden spin polarization emerging in bulk electronic states specific nonmagnetic crystals is a fascinating phenomenon, though hardly explored yet. Here, we study from theoretical perspective ${\mathrm{BaNiS}}_{2}$, recently suggested to exhibit giant Rashba-like spin-orbit splitting the bands, despite absence heavy elements. We employ density functional theory and Green's functions calculations reveal exact textures both surface. predict unambiguous signatures...
By performing density functional theory and Green's functions calculations, complemented by x-ray photoemission spectroscopy, we investigate the electronic structure of Fe/GeTe(111), a prototypical ferromagnetic/Rashba-ferroelectric interface. We reveal that such system exhibits several intriguing properties resulting from complex interplay exchange interaction, electric polarization, spin-orbit coupling. Despite rather strong interfacial hybridization between Fe GeTe bands, in complete...
Graphene physisorbed on a metal has its characteristic Dirac cones preserved in the band-structure, but Fermi level of system is shifted due to interaction with substrate. Based density functional calculations van der Waals corrections, we present method determine position point respect from measured scanning tunneling spectra (STS). It been demonstrated that dips both simulated local states and observed dI/dV profiles are indeed fingerprints points. The type doping can be then inferred...