To estimate the failure time of silicon carbide (SiC) integrated circuits in harsh environments, activation energy (Ea) and field acceleration factor SiC n-channel MOS (nMOS) p-channel (pMOS) were measured using time-dependent dielectric breakdown testing at constant voltage stress range 25–350 °C. Ea around 300 °C was 0.7 eV for nMOS 0.66 pMOS, which about twice as high that below 150 did not differ greatly depending on conductivity type. The gate mechanism shifted from 1/E model to E...

A transimpedance amplifier (TIA)-with gamma-irradiation resistance of over 1 MGy-based on a novel 4H-SiC complementary MOS (CMOS) technology was fabricated. This TIA is robust enough to be applied in measuring instruments installed nuclear power plants or other harshly irradiated environments. The SiC CMOS transistors comprising the feature thin (8-nm-thick) gate oxide reduce threshold-voltage shift (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

The operational amplifier was fabricated by 4H-SiC complementary MOS on the same die for sensors installed in nuclear power plants, and it showed over 100× radiation resistance compared with Si bipolar junction transistors. closed-loop gain at 50 kGy 11% lower than of preirradiation because allowable output voltage range became small threshold degradation p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs), offset unstable when gamma integral dose beyond 30 kGy. To reduce...

The presence of a magnetic field during anodization Si in HF solution can drastically influence the resulting porous morphology. effect strength was investigated. enables realization non-percolating straight pores diameters from 100 nm with n+-type to several micrometers for p-type Si, through depths as large μm, without any lithographic or pore initiation process. There is clear enhancement aspect ratio when increasing strength, which enhances collection holes at tips respect lateral walls....

The operational amplifier (op-amp) with high gamma irradiation capability of over 30 kGy have been fabricated by 4H-SiC MOSFETs for measuring instruments which are installed in nuclear power plants. chip size was 0.7 mm x 1.0 mm, and they consisted five n-channel three p-channel on the same die. output waveform after having irradiated 50 at a rate 60 Gy/hr amplified without distortion. On other hand, offset voltage became unstable when integral dose beyond it increased to +7.2 mV. For...

Long-term thermal stability of specific contact resistance (ρc) in cross-bridge Kelvin resistors (CBKRs), with an Al/TiN/Ti/Ni2Si/4H-SiC layered structure, was studied. In high-temperature-storage tests at 500 °C, ρc p-type SiC increased after it decreased to 1/100 from its initial value; however, 300 stable up 1000 h. The decline due the formation titanium–silicide alloy, whose barrier height is lower than that Ni2Si phase. It found when aluminum electrode disappeared because displaced...

We developed a 4H-SiC transimpedance amplifier (TIA) with high radiation hardness featuring offset-voltage stability. Regarding SiC operation, we showed that the instability of which was caused by local charge trap due to crystal defect critical. Thus, demonstrated reducing surface electric field, both reliable performance and can be achieved.

Abstract The impact of mechanical uniaxial stress on electrical characteristics 4H-SiC (0001) n-type MOSFET (n-MOSFET) was systematically investigated by a 4-point bending method. Expected variation field-effect mobility with observed and for the first time, direct relationship between significant change in threshold voltage ( V th ) lateral SiC systematically. as large 40 mV 170 MPa. By comparing flat-band fb ), it concluded that mainly consists n-MOS capacitor stress. Even though possible...

To design low-noise analog ICs for nuclear power plants, low-frequency noise (LFN) of 4H-SiC CMOS technology was studied in the frequency range 3 Hz–10 kHz at room temperature. The LFN long-channel MOS devices systematically terms gate length, width, drain current, and voltage. It found to follow model carrier number fluctuation regardless conduction type. In addition, standard deviation spectral density ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

We report the physical and electrical characterization of inversion layer carrier shallow interface trap sites with n-and p-channel SiC-MOSFET in terms high temperature electronics. This work proposes a model that explains difference between I d - V g measurement result calculation supposing ideal condition Pao Sah double room temperature. The at 500°C confirmed our so were thermally excided, they could not be easily trapped by sites, approached condition.

A novel low voltage power MOSFET with a threshold (Vth) region (sub-MOS) is proposed. The proposed has superior trade-off relationship between output efficiency and switching noise, spike 82% lower than conventional the same at 300 kHz an current of 20 A. Since device reduces drain through rate (dir/dt) by false turn-on sub-MOS, it decreases during diode reverse recovery. losses are suppressed saturation which controlled optimizing sub-MOS area Vth. on-state resistance compensates for to...

We modified the active layout of an operational amplifier (op-amp) to exhibit high gamma irradiation resistance over 100-kGy using our 4H-SiC complementary MOS technology, which can be applied for measuring instruments installed in nuclear power plants. The op-amp with features both a thin gate oxide and newly developed gate-electrode structure suppressing leakage current. From experiment we conducted, current p-channel MOSFET remained unchanged from initial value after irradiation, although...

Abstract not Available.

We have developed a SiC operational amplifier (op amp) and applied it to pressure transmitter with high radiation resistance. The op amp was prototyped on the basis of complementary MOS (CMOS) technology. Generally, in CMOS, electric charges are accumulated oxide film by irradiation. In amps using offset voltage increases owing induction defects semiconductor layer, which result from accumulation charges. On other hand, is wide-bandgap has characteristic that less likely be induced....

The monitoring and decommissioning of a nuclear power plant requires an image sensor resistant to gamma-ray irradiation that operates around the reactor. In this study, single-pixel consisting photodiode (PD) three-n-channel metal-oxide-semiconductor field-effect transistor (n-MOSFET) was initially prototyped using 4H-SiC complementary (CMOS) technology. circuit responded correctly UV lamp being switched on/off, even at 1 MGy. However, output current (I<i>_OUT</i>) increased by 60%...