A method is presented for generating quasiregular arrays of nanometer-sized noble metal and oxide clusters on flat substrates by the use a polymer template. The approach general applicability to other metals various oxides. In first step, polymeric micelles with polar core were generated dissolution poly(styrene)-block-poly(2-vinylpyridine) in toluene. These used as nanocompartments that loaded defined amount precursor. ions can be reduced such way exactly one elemental or oxidic particle...

Highly conductive molecular junctions were formed by direct binding of benzene molecules between two Pt electrodes. Measurements conductance, isotopic shift in inelastic spectroscopy, and shot noise compared with calculations provide indications for a stable junction where the molecule is preserved intact bonded to leads via carbon atoms. The has conductance comparable that metallic atomic (around 0.1-1G0), number transmission channels are controlled molecule's orientation at different...

Point contact spectroscopy on a H(2)O molecule bridging Pt electrodes reveals clear crossover between enhancement and reduction of the conductance due to electron-vibration interaction. As single-channel models predict such at transmission probability tau=0.5, we used shot noise measurements analyze observed least two channels across junction where dominant channel has tau=0.51 +/- 0.01 conductance, which is consistent with predictions for models.

Graphene is an outstanding electronic material, predicted to have a role in post-silicon electronics. However, owing the absence of bandgap, graphene switching devices with high on/off ratio are still lacking. Here search for comprehensive concept wafer-scale electronics, we present monolithic transistor that uses entire material system epitaxial on silicon carbide (0001). This consists layer its vanishing energy gap, underlying semiconductor and their common interface. The...

Abstract In this article, the electrical properties of 3C‐SiC are described and its potential for metal‐oxide semiconductor field‐effect transistors (MOSFETs) is demonstrated. The density traps, D IT , at interface 3C‐SiC/SiO 2 capacitors determined by conductance method subsequent to various processing steps; origin traps discussed. Lateral vertical MOSFET devices varying cell device size designed with hexagonal squared geometry, fabricated side MOS Hall bar structures. parameters MOSFETs...

Abstract 4H‐SiC MISFETs with nitrogen‐containing insulators have been fabricated and characterized. Several techniques explored to incorporate nitrogen in the gate insulator order improve density of interface states thereby channel mobility. The are N 2 O‐grown oxides, oxidation a surface layer co‐implanted + Al , deposited SiO annealed O NO, SiN x /SiO O. By optimizing formation process insulators, MIS capacitors N‐containing demonstrated an state close conduction band edge below × 10 11 cm...

We report on the generation and annihilation of color centers in 4H silicon carbide (SiC) by proton irradiation subsequent annealing. Using low-temperature photoluminescence (PL), we study transformation PL spectra for different doses annealing temperatures. Among well reported defect signatures, observe omnipresent but not yet identified signatures consisting three sharp temperature stable lines (denoted TS1,2,3) at 768.8 nm, 812.0 813.3 nm. These show a strong correlation throughout all...

We report ferromagnetic resonance experiments on Ga1−xMnxAs thin films. For the dc magnetic field perpendicular to sample plane, we observe up eight distinct resonances, which attribute spin wave modes. To account for spacing of infer a linear gradient in properties, is ascribed variation uniaxial anisotropy with film thickness. Values D=(1±0.4)×10−9 Oe cm2 stiffness and JMnMn≈1 meV exchange integral between Mn spins are obtained.

We present a versatile scheme dedicated to exerting strong electric fields up 0.5 MV/cm on color centers in hexagonal silicon carbide, employing transparent epitaxial graphene electrodes. In both the axial and basal direction equally can be selectively controlled. Investigating vacancy (VSi) ensemble photoluminescence experiments, we report Stark splitting of V1′ line 3 meV by electrical field shift V1 1 an field. The spectral fine-tuning VSi, being important candidate for realizing quantum...

We report on epitaxial graphene silicon carbide at high current densities. observe two distinguished regimes, and a final breakdown. First for low densities the conductance is enhanced due to desorption of adsorbates. Second with increasing bias sample locally starts glow strongly heated. The material decomposes, graphitic formed thus additional paths are created. layer breaks down, which is, however, not visible in data. breakdown self-amplifying process resulting destroyed but surprisingly...

In this study, the authors investigate deep levels, which are induced by reactive ion etching (RIE) of n-type/p-type 4H–SiC, level transient spectroscopy (DLTS). The capacitance a Schottky contact fabricated on as-etched p-type SiC is abnormally small due to compensation or deactivation acceptors extending depth ∼14 μm, nearly equal epilayer thickness. value can recover that as-grown samples after annealing at 1000 °C. However, various kinds defects, IN2 (EC−0.30 eV), EN (EC−1.6 IP1 (EV+0.30...

Abstract Amongst the different existing methods to passivate black phosphorus (BP) from environmental degradation, noncovalent functionalization with perylene diimides (PDI) has been postulated as one of most promising routes because it allows preserving its electronic properties. This work describes and outstanding protection BP tailor made PDI having peri‐amide aromatic side chains, which include phenyl naphthyl groups, exhibiting a significantly increased molecule‐BP interaction. These...

Abstract Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are key devices for next-generation power electronics. However, accurate determination of device parameters from 3-terminal characteristics is hampered by the presence interface traps. Here we present a method that, in contrast to previous evaluation schemes, explicitly considers those defects. A well-tractable parametrization SiC/SiO 2 -specific trap spectrum introduced that reflects body known data....

NOMAD CAMELS (short: CAMELS) is a configurable, open-source measurement software that records fully self-describing experimental data. It has its origins in the field of physics where wide variety instruments are used frequently changing setups and protocols. provides graphical user interface (GUI) which allows to configure experiments without need programming skills or deep understanding instrument communication. translates user-defined protocols into stand-alone executable Python code for...

This chapter briefly summarizes device-relevant material properties of the wide bandgap semiconductor silicon carbide. The polytypes 4 H -, 6 - and 3 C SiC are predominantly considered. These can reproducibly be grown as single crystals; they have superior electronic thermal properties. conductivity type adjusted by shallow donors acceptors. Special sections related to diffusion dopants, impurity conduction, minority carrier lifetime different types traps generated at interface thermally...

We employed the thermal dielectric relaxation current (TDRC) method for detection and cryogenic characterization of traps at 4H-SiC/SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface in n-channel trench MOSFETs n-MOS capacitors. The devices on (112̅0)-plane atomically differs from standard lateral [(0001)-plane]. In MOSFET, two TDRC signal peaks originating electron were found characterized by parameter variation measurements....

We report on detailed investigations of the electronic and magnetic properties ferromagnetic GaMnAs layers, which have been fabricated by low-temperature molecular-beam epitaxy. Superconducting quantum interference device measurements reveal a decrease Curie temperature from surface to GaMnAs/GaAs interface. While high resolution x-ray diffraction clearly shows homogeneous Mn distribution, pronounced carrier concentration towards interface has found Raman spectroscopy as well electrochemical...

In protein crystallography, observed diffraction intensities must be corrected for background radiation due to scatter from air and absorption by capillary., crystal mother liquor. A systematic study shows that a major contribution intensity is arising the intercepted direct X-ray beam as 'seen' receiving-counter aperture. As result there first-order dependence of on 20 angle. The second-order variations in this function are principally or air-scattered capillary glass beam. To reduce data...

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In this work, we analyze compensating defects which are formed after implantation of aluminum (Al) into n-type 4H-SiC epitaxial layers and subsequent thermal annealing. These reduce the expected free charge carrier density by 84% for a low doped layer with [Al] impl ≈ 9ž·10 16 cm -3 27 % high 2·ž10 19 . Furthermore, an electrical activation ratio implanted ions 100 is calculated. The ionization energy as measured Hall effect admittance spectroscopy ranges from 101 meV to 305 depending on...

Abstract 3C‐SiC/SiO 2 capacitors are fabricated by over‐oxidation of an implanted Gaussian nitrogen (N) profile and investigated conductance spectroscopy. An unexpected double peak structure is observed in the spectra indicating two types independent traps at different energy positions bandgap, which change their charge state with identical time constant. A theoretical model developed assuming distributions interface bandgap 3C‐SiC trap parameters. The experimental G / ω – V C simulated...