A5079823339- Magnetic confinement fusion research
- Fusion materials and technologies
- Semiconductor Quantum Structures and Devices
- Plasma Diagnostics and Applications
- Nuclear reactor physics and engineering
- Diamond and Carbon-based Materials Research
- Laser-Plasma Interactions and Diagnostics
- Nuclear Physics and Applications
- Superconducting Materials and Applications
- Semiconductor materials and devices
- GaN-based semiconductor devices and materials
- Chalcogenide Semiconductor Thin Films
- Semiconductor materials and interfaces
- Semiconductor Lasers and Optical Devices
- Particle accelerators and beam dynamics
- Terahertz technology and applications
- Advanced Optical Sensing Technologies
- Photonic and Optical Devices
- Silicon Carbide Semiconductor Technologies
- Iron oxide chemistry and applications
- Plasmonic and Surface Plasmon Research
- Electron and X-Ray Spectroscopy Techniques
- Atomic and Subatomic Physics Research
- Nuclear Materials and Properties
- Advanced Semiconductor Detectors and Materials
Physico-Technical Institute
2024
Ioffe Institute
2018-2024
St Petersburg University
2024
Physicotechnical Institute
2024
Russian Academy of Sciences
2024
ITMO University
2019-2020
Saint Petersburg State Electrotechnical University
2018
AlGaAsSb and AlGaAs films as thick 1 μm with Al content high 60% were successfully grown by low-temperature (200 °C) MBE. To overcome the well-known problem of growth disruption due to a aluminum low temperature, we applied intermittent temperature elevation smooth out emerging roughness front. Post-growth annealing obtained material allowed us form developed system As or AsSb nanoinclusions, which occupy 0.3-0.6% volume. While nanoinclusions are optically inactive, provide strong optical...
Abstract The challenges of a large-scale mirror design for the in-vessel collection system ITER divertor Thomson scattering (DTS) are under consideration. These mirrors located out-of-line vision fusion plasma (so called ‘second mirrors’) with high-reflective Ag-based coating. paper outlines: approaches providing optical surface shape and angular position stability; Ag coating applicability environment, including resistance to accidental steam ingress. proposed solutions may also appear be...
The laser-induced desorption (LID) and ablation (LIA) methods are compared with each other regarding the possibility of measurements an absolute quantitative analysis hydrogen isotopes content in first wall materials fusion reactors. Deuterium containing tungsten films a thickness 300–400 nm on silicon substrate were used as model samples. To implement LID, samples irradiated laser pulses duration 200 microseconds energy density 50–150 J/cm2, for LIA – 12 ns 5–15 J/cm2. registration residual...
Studies of contaminants obtained by spraying ITER-grade Be on a quasi-stationary plasma gun facility QSPA-Be are presented. Contaminating films, consisting mainly and O in approximately equal proportions, were deposited substrates quartz, sapphire, single crystalline silicon (SC-Si) NaCl crystal. Characterization the deposits was performed using SEM, XPS, EBS, AFM, SE, TEM&SAED micro-interferometry showing polycrystalline BeO films similar as found JET-ILW. Films SC-Si used to characterize...
Abstract The challenges of large-scale mirror design for in-vessel collection system ITER Divertor Thomson Scattering (DTS) are under consideration. These the mirrors located out-of-line vision fusion plasma (so called “second mirrors” i.e. not First Mirrors) with high-reflective Ag-based coating. paper outlines: approaches providing optical surface shape and angular position stability; Ag coating applicability in nuclear irradiation, application its resistance to Steam Ingress. Although,...
Epitaxial layers of Al x Ga 1-x As 1-y Sb y with an aluminum content x~60% and antimony y~3% were successfully grown by molecular-beam epitaxy at low temperature. A developed system AsSb nanoinclusions was formed in the semiconductor matrix subsequent annealing. The extended transparency window obtained metamaterial allows us to document absorption light near interband edge matrix. Parameters observed extinction band allow attribute optical plasmon resonance nanoinclusions. Keywords:...
A study of samples grown by molecular beam epitaxy using the technology InxAl1-xAs or InxGa1-xAs metamorphic buffer layer formation on GaAs (001) substrate was performed transmission electron microscopy. The 1 μm thick layers with square-root dependence In content thickness were studied in plan-view and cross-section geometries. results demonstrate cascade step-wise relaxation misfit strain along reduction dislocation density to less than 10−6 cm−2 at subsurface region. An inhomogeneous...
Abstract An anodic oxidation of GaAs substrates in a non-self-sustained low-current dc Townsend discharge is investigated. The process carried out at the room temperature three-electrode microreactor filled by 98%Ar + 2%O 2 gas mixture. Investigation kinetics indicates that formed oxide characterized high resistivity, ρ ∼ 10 11 Ω·cm. It demonstrated application method for formation films with dimensions tens microns, which thickness on nanometer scale. Examination “GaAs substrate - layer”...