A5043578062- Semiconductor Quantum Structures and Devices
- Plasmonic and Surface Plasmon Research
- Photonic Crystals and Applications
- Near-Field Optical Microscopy
- GaN-based semiconductor devices and materials
- Gold and Silver Nanoparticles Synthesis and Applications
- Terahertz technology and applications
- Semiconductor materials and interfaces
- Advanced Semiconductor Detectors and Materials
- Strong Light-Matter Interactions
- Quantum Dots Synthesis And Properties
- Thermal Radiation and Cooling Technologies
- Nanowire Synthesis and Applications
- Chalcogenide Semiconductor Thin Films
- Optical Coatings and Gratings
- Photonic and Optical Devices
Ioffe Institute
2015-2024
Peter the Great St. Petersburg Polytechnic University
2014-2022
Submicron Heterostructures for Microelectronics Research and Engineering Center
2022
Russian Academy of Sciences
2013-2014
We reveal the feasibility of localized surface plasmon resonance in a system Bi nanoparticles embedded into an AlxGa1−xAs semiconductor matrix. With ab initio determined dielectric function for bismuth and well-known properties solid solution, we performed calculations optical extinction spectra such metamaterial using Mie’s theory. The demonstrate strong band plasmons near photon energy 2.5 eV. For semiconducting matrices with high aluminum content x>0.7, by plasmonic plays dominant role...
We perform numerical modeling of the optical absorption spectra metamaterials composed systems semimetal antimony nanoparticles embedded into AlxGa1−xAs semiconductor matrices. reveal a localized surface plasmon resonance (LSPR) in these metamaterials, which results strong extinction band below, near, or above direct gap matrices, depending on chemical composition solid solutions. elucidate role dielectric losses AlxGa1−xAs, impact LSPR and cause non-plasmonic absorption. It appears that...
We study a disorder-induced transformation of the resonant optical reflection from nearly periodic system quasi-2D excitons in InGaN quantum wells arranged as Bragg structure (RBS). show that there is critical deviation exact periodicity when by single super-radiant exciton–polariton mode transformed into multimode spectrum. This disorder appears to be inversely proportional number periods RBS. Using numerical model which describes experimentally observed spectra, we found standard 1.76%,...
We analyze the possibility to realize a localized surface plasmon resonance in metamaterials composed of As1−zSbz nanoparticles embedded an AlxGa1−xAs1−ySby semiconductor matrix. To this end, we perform ab initio calculations dielectric function materials. Changing chemical composition z, trace evolution band structure, function, and loss function. In terms Mie theory, calculate polarizability optical extinction system environment. show provide near gap matrix by built-in strongly enriched...
Epitaxial layers of Al x Ga 1-x As 1-y Sb y with an aluminum content x~60% and antimony y~3% were successfully grown by molecular-beam epitaxy at low temperature. A developed system AsSb nanoinclusions was formed in the semiconductor matrix subsequent annealing. The extended transparency window obtained metamaterial allows us to document absorption light near interband edge matrix. Parameters observed extinction band allow attribute optical plasmon resonance nanoinclusions. Keywords:...
Получена 31 мая 2018 г
AbstractThe optical reflection in periodic structures based on a semiconductor AlGaAs matrix containing two-dimensional arrays of plasmonic AsSb nanoinclusions was studied. The number periods 12 or 24. spatial period near 110 nm both cases. In the experimental spectra at normal incidence we observed resonant Bragg diffraction with main peaks wavelengths 757 775 nm, depending nanostructure. magnitudes resonance reached 19 and 31% for systems 24 AsSb–AlGaAs layers, while volume fraction much...
By molecular-beam epitaxy we have grown epitaxial layers of GaAs 1-x Bi x solid solutions with a bismuth content 0<x<0.02. Structural and optical properties the were investigated. We determine influence flux substrate temperature on incorporation into growing layers. Keywords: gallium arsenide, bismuth, epitaxy, bandgap.
By molecular-beam epitaxy we have grown epitaxial layers of GaAs1-xBix solid solutions with a bismuth content 0 < x 0.02. Structural and optical properties the were investigated. We determine influence flux substrate temperature on incorporation into growing layers.