A5103150881- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Advanced Combustion Engine Technologies
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Vehicle emissions and performance
- Biodiesel Production and Applications
- Advanced Semiconductor Detectors and Materials
- Ferroelectric and Negative Capacitance Devices
- Copper Interconnects and Reliability
- Integrated Circuits and Semiconductor Failure Analysis
- Photonic and Optical Devices
- ZnO doping and properties
- Catalytic Processes in Materials Science
- Quantum and electron transport phenomena
- Chalcogenide Semiconductor Thin Films
- Silicon Nanostructures and Photoluminescence
- Metal Alloys Wear and Properties
- Ruminant Nutrition and Digestive Physiology
- Aerosol Filtration and Electrostatic Precipitation
- Hybrid Renewable Energy Systems
- Electronic and Structural Properties of Oxides
- Postharvest Quality and Shelf Life Management
- Silicon and Solar Cell Technologies
- Metallurgy and Material Forming
Khulna University
2023
Vivekananda Institute of Medical Sciences
2021
University of Engineering & Management
2021
Jadavpur University
2005-2020
National Institute of Technology Agartala
2010-2015
National Institute Of Technology Silchar
2009
Indian Institute of Technology Kharagpur
2003-2007
Zirconium oxide (ZrO2) films have been deposited on Ge-rich SiGe heterolayers at 150 ?C by the microwave plasma enhanced chemical vapour deposition (PECVD) technique using zirconium tetra-tert-butoxide. The possible conduction mechanisms in ZrO2 investigated both room and high temperature. It is found that mechanism dominated Schottky emission a low electric field (E 1.2 MV cm?1). extracted trap energy about 0.78 eV from band of ZrO2. shown current exhibits strong temperature dependence...
The interfacial and electrical properties of RF sputtered La2O3 on p-GaAs substrates with without ultrathin Si interface passivation layer (IPL) are reported. X-ray photoelectron spectroscopy (XPS) studies revealed the formation thermally stable native oxide (Ga-oxide As-oxide) for La2O3/Si/p-GaAs gate stacks. presence (La2O3)1-x(SiO2)x at prevented La-hydroxide which improved metal-oxide-semiconductor (MOS) device characteristics, such as state density (∼1.2×1012eV−1cm−2), frequency...
Thin HfTaOx and HfTaTiOx gate dielectrics (∼7–8 nm) have been rf sputter-deposited on sulfur passivated GaAs. Our experimental results suggest that the formation of Ga-O at GaAs surface As diffusion in dielectric may be effectively controlled by Ti incorporation. Possibility tailoring band alignment via incorporation is shown. Valence offsets 2.6±0.05 2.68±0.05 eV conduction-band 1.43±0.05 1.05±0.05 were found for (Eg∼5.45 eV) (Eg∼5.15 eV), respectively.
TiO2 films have been deposited at a low temperature (∼150 °C) using titanium tetrakis isopropoxide (TTIP) as an organometallic precursor on Si0.3Ge0.7 heterolayers by microwave plasma-enhanced chemical vapour deposition system. Interfacial properties of the as-deposited characterized capacitance–voltage and conductance–voltage techniques measured different frequencies. The energy distribution interface states relaxation time determined from Gp/ω versus ω analysis. A Dit level Al/TiO2/SiGe...
We demonstrate the potential of sulfur passivation to improve interface characteristics between germanium (Ge) and Y2O3 high-k gate dielectric. Effects nitrogen (N) (S) Ge surface on charge trapping reliability properties Y2O3/Ge stacks are studied in detail results compared. Sulfur has been performed using both wet sulfidation technique with aqueous ammonium sulfide plasma H2S gas. N-passivation substrates NO for comparison. Ultrathin (∼15 nm) films deposited N- S-passivated p-Ge (1 0 0)...
The photoemission from quantum wires and dots of effective mass superlattices optoelectronic materials was investigated on the basis newly formulated electron energy spectra, in presence external light waves, which controls transport properties ultra-small electronic devices under intense radiation. effect magnetic quantization aforementioned superlattices, together with well quantization, has also been this regard. It appears, taking HgTe/Hg(1-) (x)Cd(x)Te In(x)Ga(1-) (x)As/InP that these...
The Renewable Energy resources vary with of the day and season year even some extent from to year. Aim this paper conserve energy, natural resources. For Solar resource, we are mainly interested find out solar cell characteristics by plotting I-V curve monthly average energy output a module. Also observe temperature versus module in month January order verify performance under fog, dust due Kolaghat Thermal Power plant area other external hazards. Then development is made on tracking system...
Hilsa shad, Tenualosa ilisha, has recently gained momentum due to its taste, nutrition, and demand. Imposing ban at peak breeding setting up a minimum capture size are two of the most effective tools for conservation management any fish species. Although, Bangladesh government been imposing on particular time set legal size, there is still contradictory information these issues. That why, study was carried out determine season first maturity collected across natural habitats in Bangladesh....
Titanium oxide (TiO2) high-k dielectric layers were deposited on the Si0.3Ge0.7 substrates by plasma enhanced chemical vapor deposition (PECVD) at low temperature (150°C). To study effects of annealing electrical properties, TiO2 films annealed in pure nitrogen ambient range 400–600°C. Good performance for gate dielectrics was observed up to 500°C, terms interface state density, leakage current, and charge trapping properties. Annealing 600°C is found degrade properties due Ge segregation...