A5046599607- Electronic and Structural Properties of Oxides
- Machine Learning in Materials Science
- Magnetic and transport properties of perovskites and related materials
- Inorganic Chemistry and Materials
- Topological Materials and Phenomena
- Advanced X-ray and CT Imaging
- Graphene research and applications
- Financial Markets and Investment Strategies
- Advanced Condensed Matter Physics
- Ga2O3 and related materials
- Semiconductor materials and devices
- Thermal Expansion and Ionic Conductivity
- 2D Materials and Applications
- Advanced Battery Materials and Technologies
- Energy Load and Power Forecasting
- Ferroelectric and Piezoelectric Materials
- GaN-based semiconductor devices and materials
- Stock Market Forecasting Methods
National Renewable Energy Laboratory
2024-2025
New Mexico State University
2020-2023
Central Michigan University
2017
The accelerated progress in artificial intelligence encourages sophisticated deep learning methods predicting stock prices. In the meantime, easy accessibility of market palm one's hand has made its behavior more fuzzy, volatile, and complex than ever. world is looking at an accurate reliable model that uses text numerical data which better represents market's highly volatile non-linear a broader spectrum. A research gap exists accurately target stock's closing price utilizing combined data....
Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO3 (BSO). ACBN0 computations for BSO/SrNbO3 (SNO) interfaces show Nb-4d injection into extended Sn-5s states. The conduction band minimum consists of states ∼1.2 eV below the Fermi level intermediate thickness 6-unit cell BSO/6-unit SNO superlattices, corresponding to an density BSO ∼1021 cm–3. Experimental studies analogous BSO/SNO grown by...
Abstract Two-dimensional electron gases (2DEGs) realized at perovskite oxide interfaces offer great promise for high charge carrier concentrations and low-loss transport. BaSnO 3 (BSO) SrSnO (SSO) are well-known wide bandgap semiconductors their mobility due to the Sn- 5s -dominated conduction band minimum (CBM). Ta 4+ with a 5 d 1 valence configuration in SrTaO (STaO) injects across interface into unoccupied Sn -5s states BSO SSO. The present study uses ACBN0 density functional theory...
The electronic properties of β-PbO2, have been controversial for several decades. Experiments find behavior ranging from metallic, attributed to oxygen vacancies, indirect semiconducting stoichiometric samples with a gap 0.61 eV. Theory leads similar ambiguities, and predicts this phase be metallic (PBE, HSE06) or possess small bandgap (HSE06). An area where inconsistency is amplified, when material depends on the structure in vicinity Fermi energy, such as topological states. In our work,...
The realization of robust intrinsic ferromagnetism in two-dimensional materials with the possibility to support topologically non-trivial states has provided fertile ground for novel physics and next-generation spintronics quantum computing applications. In this contribution, we investigated formation topological magnetism monolayer bilayer systems ReX3(X= Br, I), PBE, ACBN0 (self-consistent Hubbard-U), excluding/including van der Waals (vdW) corrections and/or spin-orbit coupling. Bulk I)...
Epitaxial lattice matching is an important condition for the formation of coherent interfaces with low defect densities. However, lattice-matched substrates same crystal structure as active layer are often not available, suggesting opportunities utilizing heterostructural interfaces. For example, at high <a:math xmlns:a="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><a:mi>Al</a:mi></a:math> contents that interesting ultrawide-gap applications in power electronics,...
Tight-binding models provide a conceptually transparent and computationally efficient method to represent the electronic properties of materials. With AFLOW$π$ we introduce framework for high-throughput first principles calculations that automatically generates tight-binding hamiltonians without any additional input. Several features are included in with intent simplify self-consistent calculation Hubbard U corrections, phonon dispersions, elastic properties, complex dielectric constants,...
Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO$_{3}$ (BSO). ACBN0 computations for BSO/SrNbO$_{3}$ (SNO) interfaces show Nb-4$\textit{d}$ injection into extended Sn-5$\textit{s}$ states. The conduction band minimum consists of states ~1.2 eV below the Fermi level intermediate thickness 6-unit cell BSO/6-unit SNO superlattices, corresponding to an density BSO ~10$^{21}$ cm$^{-3}$....