The commonly observed hysteresis in the transfer characteristics of MoS2 transistors is typically associated with charge traps gate insulator. Since Si technologies such can lead to severe reliability issues, we perform a combined study both as well arguably most important issue, bias-temperature instability. We use single-layer FETs SiO2 and hBN insulators demonstrate that phenomena are indeed due insulator time constants distributed over wide timescales, where faster ones slower...

This article presents a physical model of the threshold voltage in MOSFETs valid down to 4.2 K. Interface traps close band edge modify saturating temperature behavior observed cryogenic measurements. Dopant freezeout, bandgap widening, and uniformly distributed do not change qualitative over temperature. Care should be taken because dopant freezeout results different definition voltage. Using definitions changes significantly current level. The proposed is experimentally validated with...

Characterization, modeling, and development of cryo-temperature CMOS technologies (cryo-CMOS) have significantly progressed to help overcome the interconnection bottleneck between qubits readout interface in quantum computers. Nevertheless, available compact models still fail predict deviation 1/f noise from expected linear scaling with temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$...

MoS2 has received a lot of attention lately as semiconducting channel material for electronic devices, in part due to its large band gap compared that other 2D materials. Yet, the performance and reliability these devices are still severely limited by defects which act traps charge carriers, causing reduced mobilities, hysteresis, long-term drift. Despite their importance, only poorly understood. One fundamental problem defect characterization is concentration average response bias changes...

In this work, we present time-zero variability and degradation data obtained from a large set of on-chip devices in specifically designed arrays, room temperature to 4K. We show that the investigated nMOS transistors still suffer significant PBTI HC down lowest temperatures. further investigate contribution multiple- carrier mechanism versus single-carrier Si-H bond dissociation across different Finally, extrapolate time-to-failure for gate drain bias space HCD after on-state stress...

Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegraph noise (RTN), hysteresis or trap-assisted tunneling (TAT). In this work we present Comphy v3.0, open source physical framework modeling these effects a unified fashion using nonradiative multiphonon theory on one-dimensional device geometry. Here give overview about underlying theory, discuss newly introduced...

We perform a comprehensive analysis of hot-carrier degradation (HCD) in FinFETs. To accomplish this goal we employ our physics-based HCD model and validate it against experimental data acquired n-FinFETs with channel length 28 nm. use verified to study the distribution trap density across fin/stack interface. The methodology is applied analyze effect transistor architectural parameters, namely fin length, width, height, on HCD. Our results show that at same conditions becomes more severe...

In this paper, we examine the interplay of two serious reliability issues in MOSFET devices, namely, bias temperature instability (BTI) and hot-carrier degradation (HCD). Most publications are devoted to characterization either BTI or HCD, complex models have been developed independently describe each mode. However, very limited data available on both regimes, particularly effect a drain onto charging discharging dynamics oxide traps. Part I paper provides an extensive experimental study...

Characterizing mixed hot-carrier/bias temperature instability (BTI) degradation in full {V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">G</sub> , V xmlns:xlink="http://www.w3.org/1999/xlink">D</sub> } bias space is a challenging task. Therefore, studies usually focus on individual mechanisms, such as BTI and hot-carrier (HCD). However, simple superposition of these mechanisms at an arbitrary combination often fails to predict the cumulative...

Instabilities in MOS-based devices with various substrates ranging from Si, SiGe, IIIV to 2D channel materials, can be explained by defect levels the dielectrics and non-radiative multi-phonon (NMP) barriers. However, recent results obtained on single defects have demonstrated that they show a highly complex behaviour since transform between states. As consequence, detailed physical models are complicated computationally expensive. will shown here, as long only lifetime predictions for an...

Quantum computers based on solid state qubits have been a subject of rapid development in recent years. In current Noisy Intermediate-Scale (NISQ) technology, each quantum device is controlled and characterised though dedicated signal line between room temperature base dilution refrigerator. This approach not scalable currently limiting the large-scale system integration characterisation. Here we demonstrate custom designed cryo-CMOS multiplexer operating at 32 mK. The exhibits excellent...

SiGe quantum-well pMOSFETs have recently been introduced for enhanced performance of transistors. Quite surprisingly, a significant reduction in negative bias temperature instability (NBTI) was also found these devices. Furthermore, stronger oxide field acceleration the degradation devices compared with Si reported. These observations were speculated to be consequence energetical realignment channel respect dielectric stack. As made on large-area devices, only average contribution many...

Cryo-computing has been proposed for data center and HPC applications. Ultra-low temperature CMOS not only the potential to aid node-to-node performance-power improvement despite cooling overhead but can also alleviate thermal challenges in modern designs realized at advanced technology nodes. This paper presents a system-technology co-optimization of cryogenic (100-150K) achieve 16X performance-per-watt gain. Device circuit-level optimizations logic memory circuits are showcased, an...

CMOS technologies operating at cryogenic temperatures play a key role in the successful deployment of quantum computers. While tremendous efforts have been devoted to understanding de-vice electrostatics, there is lack studies on device performance degradation mechanisms, as for instance bias temperature instability (BTI), environments. To study BTI, typically large-area devices are characterized. However, we demonstrate, when approaching cyrogenic regime, investigation single defects...

Cryogenic semiconductor device models are essential in designing control systems for quantum devices and bench-marking the benefits of cryogenic cooling high-performance computing. In particular, saturation subthreshold swing due to band tails is an important phenomenon include low temperature analytical MOSFET as it predicts theoretical lower bounds on leakage power supply voltage tailored CMOS technologies with tuned threshold voltages. Previous physics-based modeling required evaluate...

Cryo-CMOS characterization, modeling, and development have significantly progressed to help overcome the interconnection bottleneck between qubits readout interface of quantum computers. Nevertheless, available compact models for circuit design fail predict detrimental deviation 1/f noise from expected T scaling observed at cryogenic temperatures. In this paper, we extensively characterize on a commercial 28 nm CMOS technology as well Ge channel devices temperatures ranging 370 K down 4 K....

Integrating CMOS circuits and qubits at cryogenic temperatures requires high-frequency operation in the GHz range together with ultra-low power consumption very low noise figures. One approach to reduce is optimize towards lower supply voltages. However, this reduces tolerable margins on device-to-device variations parameter degradation. In study, we present a comprehensive overview time-zero performance, variability, reliability of 28 nm bulk technology using thousands transistors measured...

We develop and validate a fully analytical model for hot-carrier degradation based on thorough description of the physical picture behind this reliability phenomenon. This approach captures links carrier transport, modeling Si-H bond-breakage mechanisms, simulations degraded devices. All quantities evaluated within are described by expressions time consuming TCAD therefore avoided. show that can capture measured dependencies normalized linear drain current change stress with good accuracy.

Hot-carrier-induced degradation of short p-channel field-effect transistors in the presence externally applied vertical mechanical force is investigated. The stress was induced devices by applying a normal load with nanoindenter. Using finite element modeling, to channel estimated reach GPa range. It shown that compressive considerably enhances impact ionization rate and generation secondary electron-hole pairs. These can be trapped gate oxide cause hot-electron-induced punch-through effect...

Charge trapping is arguably the most important detrimental mechanism distorting ideal characteristics of MOS transistors, and nonradiative multiphonon (NMP) models have been demonstrated to provide a very accurate description. For calculation NMP rates at room temperature or above, simple semiclassical approximations successfully used describe this intricate mechanism. However, for computation charge transition cryogenic temperatures, it necessary use full quantum mechanical description...

The impact of mechanical stress (MS) on MOSFET gate-induced drain leakage (GIDL) current is investigated. tests were performed planar short-channel p- and n-type MOSFETs. Vertical compressive MS was induced in the devices by applying a vertical load with nanoindenter. applied ranging from several hundred MPa to GPa range, estimated finite-element modeling. It reported that GIDL increases exponentially MS. This effect attributed MS-induced reduction silicon bandgap effective mass, leading...

Charge trapping is one of the main reliability issues for GaN-based MIS-high-electron-mobility-transistor technologies. In this paper, we focus on defects located at or close to interface with dielectric, which are responsible threshold voltage instability positive gate bias conditions. We present a methodology analyze experimental data based nonradiative multiphonon model charge trapping. particular, show how extract density traps as function their activation energy from stress and recovery...

Charge trapping in gallium-nitride (GaN) metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) is a serious reliability challenge but still poorly understood. A promising opportunity to investigate physical defect properties has become available through nanoscale GaN fin-MIS-HEMTs which are small enough be sensitive the impact of individual defects. In this work, we extract four pre-existing single defects, identified by their correlated random telegraph noise (RTN)...