A.M.A. Shamekh

ORCID: 0000-0003-1680-6191
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Research Areas
  • Phase-change materials and chalcogenides
  • Chalcogenide Semiconductor Thin Films
  • Glass properties and applications
  • Polymer Nanocomposite Synthesis and Irradiation
  • Silicon Nanostructures and Photoluminescence
  • Ga2O3 and related materials
  • Luminescence Properties of Advanced Materials
  • Conducting polymers and applications
  • Dielectric materials and actuators
  • Advanced Semiconductor Detectors and Materials
  • Carbon Nanotubes in Composites
  • Pigment Synthesis and Properties
  • Nonlinear Optical Materials Studies
  • Thin-Film Transistor Technologies
  • Thermal properties of materials
  • Color Science and Applications
  • Polymer Nanocomposites and Properties
  • Graphene research and applications
  • Mineralogy and Gemology Studies
  • ZnO doping and properties

Qassim University
2021-2024

Assiut University
2005-2024

Kanazawa University
2010

Abstract This paper reports the structure, basic characteristics, photocatalytic performance, and crystallization kinetics of Se70Te30 glass. The glass was synthesized using melt-quenching method. were investigated under non-isothermal conditions via differential scanning calorimetry (DSC) technique. For example, transition activation energy, thermal stability, Avrami index have been determined discussed. It found that stability glass-forming ability influence rate. Furthermore, energy...

10.1088/1402-4896/ad964c article EN Physica Scripta 2024-11-22

The effects of high-temperature thermal annealing on cathodoluminescence (CL) spectra in SiO x (0.9 ≤ ≤1.87) films prepared by radio-frequency sputtering are investigated. CL intensities for the as-deposited weak but they increase after at 900 and 1100 °C. One features annealed °C is a peak photon energy ∼2.7 eV with an asymmetric tail lower side. In order to analyze spectral features, optical transition energies calculated Si n clusters = 2–5, embedded matrix, ab initio molecular orbital...

10.1143/jjap.50.01bf04 article EN Japanese Journal of Applied Physics 2011-01-01

The effects of high-temperature thermal annealing on cathodoluminescence (CL) spectra in SiOx (0.9 ≤x ≤1.87) films prepared by radio-frequency sputtering are investigated. CL intensities for the as-deposited weak but they increase after at 900 and 1100 °C. One features annealed °C is a peak photon energy ∼2.7 eV with an asymmetric tail lower side. In order to analyze spectral features, optical transition energies calculated Sin clusters n = 2–5, embedded matrix, ab initio molecular orbital...

10.7567/jjap.50.01bf04 article EN Japanese Journal of Applied Physics 2011-01-01
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