Hakseung Rhee

ORCID: 0000-0003-1682-3928
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Research Areas
  • Advanced Memory and Neural Computing
  • Ferroelectric and Negative Capacitance Devices
  • Neural Networks and Reservoir Computing
  • Neuroscience and Neural Engineering
  • Copper Interconnects and Reliability
  • Semiconductor materials and devices
  • CCD and CMOS Imaging Sensors
  • Neural dynamics and brain function
  • Physical Unclonable Functions (PUFs) and Hardware Security
  • Photoreceptor and optogenetics research
  • Analog and Mixed-Signal Circuit Design
  • Infrared Target Detection Methodologies
  • Perovskite Materials and Applications
  • Electrodeposition and Electroless Coatings
  • Semiconductor materials and interfaces

Korea Advanced Institute of Science and Technology
2020-2024

Abstract The intrinsic stochasticity of the memristor can be used to generate true random numbers, essential for non-decryptable hardware-based security devices. Here, we propose a novel and advanced method numbers utilizing stochastic oscillation behavior NbO x mott memristor, exhibiting self-clocking, fast variation tolerant characteristics. number generation rate device at least 40 kb s −1 , which is fastest record compared with previous volatile memristor-based TRNG Also, its...

10.1038/s41467-021-23184-y article EN cc-by Nature Communications 2021-05-18

NbOx-based Mott memristors exhibit fast threshold switching behaviors, making them suitable for spike generators in neuromorphic computing and stochastic clock security devices. In these applications, a high output amplitude is necessary level control accurate signal detection. Here, we propose materialwise solution to obtain the spikes by inserting Au nanodots into NbOx device. The enable increasing voltage modulating oxygen contents at electrode-oxide interface, providing higher ON current...

10.1021/acs.nanolett.2c04599 article EN Nano Letters 2023-03-17

Energy-based computing is a promising approach for addressing the rising demand solving NP-hard problems across diverse domains, including logistics, artificial intelligence, cryptography, and optimization. Probabilistic utilizing pbits, which can be manufactured using semiconductor process seamlessly integrated with conventional processing units, stands out as an efficient candidate to meet these demands. Here, we propose novel pbit unit NbOx volatile memristor-based oscillator capable of...

10.1038/s41467-023-43085-6 article EN cc-by Nature Communications 2023-11-08

Insects can efficiently perform object motion detection via a specialized neural circuit, called an elementary detector (EMD). In contrast, conventional machine vision systems require significant computational resources for dynamic processing. Here, fully memristive EMD (M-EMD) is presented that implements the Hassenstein-Reichardt (HR) correlator, biological model of EMD. The M-EMD consists simple Wye (Y) configuration, including static resistor, memristor, and Mott memristor. resistor...

10.1002/adma.202309708 article EN Advanced Materials 2024-01-22

Artificial intelligence (AI) is often considered a black box because it provides optimal answers without clear insight into its decision-making process. To address this problem, explainable artificial (XAI) has emerged, which an explanation and interpretation of decisions, thereby promoting the trustworthiness AI systems. Here, memristive XAI hardware framework presented. This incorporates three distinct types memristors (Mott memristor, valence change charge trap memristor), each...

10.1002/adma.202400977 article EN cc-by-nc Advanced Materials 2024-03-20

Cu interconnects suffer from increased resistance and poor reliability at a sub-10 nm width. Ru Mo have been highlighted recently as the next interconnection material candidate due to their various advantages over Cu; they lower than nm, do not diffuse into SiO2, are etchable. Here, we evaluated electromigration (EM) of confirm feasibility for next-generation interconnection. The activation energy EM failure is calculated by measuring mean time (MTTF) film wire structures while factoring in...

10.1021/acsaelm.3c00070 article EN ACS Applied Electronic Materials 2023-04-26

Valence change-type resistance switching behaviors in oxides can be understood by well-established physical models describing the field-driven oxygen vacancy distribution change. In those models, electroformed residual filaments are crucial as they work an electric field concentrator and limit movement along vertical direction. Therefore, their outward diffusion is negligible. However, this situation may not applicable electroforming-free system, where less prominent, isotropic concentration...

10.1021/acsami.2c10944 article EN ACS Applied Materials & Interfaces 2022-07-28

Reliability was ensured and 8.5 times higher efficiency in a 64-bit adder achieved through the parallel operation of MAJ logic.

10.1039/d4mh01196a article EN Materials Horizons 2024-01-01

Memristive stateful logic for Boolean computers and memristive neural networks neuromorphic are two distinct emerging applications enabled by memristors in future computing. Interestingly, they both utilize an identical crossbar array platform, suggesting their simultaneous implementation is possible. Herein, a new methodology combining the technologies to create synergy computing proposed. A genetic algorithm network introduced, where stochastic realizes required mutation crossover...

10.1002/aisy.202200058 article EN cc-by Advanced Intelligent Systems 2022-06-22

<title>Abstract</title> Edge computing devices, which generate, collect, process, and analyze data near the source, enhance processing efficiency improve responsiveness in real-time applications or unstable network environments. To be utilized wearable skin-attached electronics, these edge devices must compact, energy efficient for use low-power environments, fabricable on soft substrates. Here, we propose a flexible memristive dot product engine (f-MDPE) designed demonstrate its feasibility...

10.21203/rs.3.rs-4575664/v1 preprint EN cc-by Research Square (Research Square) 2024-06-25

Abstract Energy-based computing is a promising approach for solving NP-hard problems. Probabilistic using pbits, which can be fabricated through the semiconductor process and integrated with conventional processing units, an efficient candidate fulfilling these demands. Here, we propose novel pbit unit comprising NbO x mott memristor-based oscillator, capable of generating probabilistic bits in self-clocking manner. The noise-induced transition causes behavior, effectively modeled...

10.21203/rs.3.rs-3027417/v1 preprint EN cc-by Research Square (Research Square) 2023-06-09

<title>Abstract</title> Heat dissipation is a natural consequence of operating any electronic system. In nearly all computing, such heat minimized by design and discarded via cooling, while some post-digital electronics (such as phase-change memories) utilize only the static electrical outcome within single device to represent information. Thus, neither naturally produced energy nor its dynamics are directly used for computing. Here we demonstrate NbO<sub>x</sub> Mott neurons integrated on...

10.21203/rs.3.rs-3134569/v1 preprint EN cc-by Research Square (Research Square) 2023-07-18

Abstract The intrinsic stochasticity of the memristor can be used to generate true random numbers, essential for non-decryptable hardware-based security devices. Here we propose a novel and advanced method numbers utilizing stochastic oscillation behavior NbOx mott memristor, exhibiting self-clocking, fast variation tolerant characteristics. number generation rate device at least 40 kbs-1, which is fastest record compared with previous volatile memristor-based TRNG Also, its dimensionless...

10.21203/rs.3.rs-118145/v1 preprint EN cc-by Research Square (Research Square) 2020-12-07
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