A nociceptor is a critical and special receptor of sensory neuron that able to detect noxious stimulus provide rapid warning the central nervous system start motor response in human body humanoid robotics. It differs from other common receptors with its key features functions, including "no adaptation" "sensitization" phenomena. In this study, we propose experimentally demonstrate an artificial based on diffusive memristor dynamics for first time. Using nociceptor, further built alarm...

In this Review, memristors are examined from the frameworks of both von Neumann and neuromorphic computing architectures. For former, a new logic computational process based on material implication is discussed. It consists several which play roles combined processor memory, called stateful circuit. circuit configuration, flows primarily along time dimension, whereas in current computers it occurs spatial dimension. computation scheme, energy required for data transfer between memory chips...

Tantalum-oxide-based bi-layered resistance-change memories (RRAMs) have recently improved greatly with regard to their memory performances. The formation and rupture of conductive filaments is generally known be the mechanism that underlies resistive switching. nature filament has been studied intensively several phenomenological models consistently predicted behavior. However, a physics-based model describes complete RRAM structure not yet demonstrated. Here, electro-thermal switching based...

A Pt/NbOx/TiOy/NbOx/TiN stack integrated on a 30 nm contact via shows programming current as low 10 nA and 1 pA for the set reset switching, respectively, self-rectifying ratio high ∼105, which are suitable characteristics low-power memristor applications. It also forming-free characteristic. charge-trap-associated switching model is proposed to account this memrisive behavior. In addition, an asymmetric voltage scheme (AVS) decrease write power consumption by utilizing described. When...

The biomimetic characteristics of the memristor as an electronic synapse and neuron have inspired advent new information technology in neuromorphic computing. application memristors can be extended to artificial nerves on condition presence receptors which transfer external stimuli internal nerve system. In this work, nociceptor behaviors are demonstrated from Pt/HfO2 /TiN for receptors. device shows four specific nociceptive behaviors; threshold, relaxation, allodynia, hyperalgesia,...

Abstract Hardware-based cryptography that exploits physical unclonable functions is required for the secure identification and authentication of devices in Internet Things. However, are typically based on anticounterfeit identifiers created from randomized microscale patterns or non-predictable fluctuations electrical response semiconductor devices, validation an encrypted signature relies a single-purpose method such as microscopy measurement. Here we report nanoscale function labels...

The detailed mechanism of electronic bipolar resistance switching (BRS) in the Pt/TiO2/Pt structure was examined. conduction analysis showed that trap-free and trap-mediated space-charge-limited (SCLC) governs low high state BRS, respectively. SCLC confirmed by fitting current–voltage characteristics states at various temperatures. BRS behavior originated from asymmetric potential barrier for electrons escaping from, trapping into, trap sites with respect to bias polarity. This formed...

Pt/Ta2 O5 /HfO2- x /Ti resistive switching memory with a new circuit design is presented as feasible candidate to succeed multilevel-cell (MLC) NAND flash memory. This device has the following characteristics: 3 bit MLC, electroforming-free, self-rectifying, much higher cell resistance than interconnection wire resistance, low voltage operation, power consumption, long-term reliability, and only an electronic mechanism, without ionic-motion-related mechanism.

A highly reliable RRAM with multi-level cell (MLC) characteristics were fabricated using a triple-layer structure (base layer/oxygen exchange layer/barrier layer) for the storage class memory applications. reproducible switching behaviour was successfully observed, and simulated by modulated Schottky barrier model. Morevoer, new programming algorithm developed more uniform MLC operation. As result, than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML"...

This study examined the effects of electrical forming methods on bipolar resistance switching (BRS) behavior in Pt/TiO2/Pt sandwich structures. The BRS is confined to a region near ruptured end conducting nanofilaments, which are composed TinO2n − 1 Magnéli phase formed by electroforming. intermediate with an oxygen vacancy concentration between insulating TiO2 and residual filament that at interface was considered be layer (SL). change shape caused variation compliance current during...

This study examined the properties of Schottky-type diodes composed Pt/TiO2/Ti, where Pt/TiO2 and TiO2/Ti junctions correspond to blocking ohmic contacts, respectively, as selection device for a resistive switching cross-bar array. An extremely high forward-to-reverse current ratio ∼ 109 was achieved at 1 V when TiO2 film thickness 19 nm. grown by atomic layer deposition substrate temperature 250 °C. Conductive force microscopy revealed that forward flew locally, which limits maximum density...

To facilitate the development of memristive devices, it is essential to resolve problem non‐uniformity in switching, which caused by random nature filamentary switching mechanism many resistance memories based on transition metal oxide. In addition, device parameters such as low‐ and high‐state should be regulated desired. These issues can overcome if devices have limits for both high‐resistance states their values are highly controllable. this study, a method termed self‐limited uniformly...

The impact of a series resistor (R(S)) on the variability and endurance performance memristor was studied in TaO(x) memristive system. A dynamic voltage divider between R(S) during both set reset switching cycles can suppress inherent irregularity dropped memristor, resulting greatly reduced variability. By selecting proper resistance value for respectively, we observed dramatically improved memristor. Such effect thus be critical applications that require low variability, high fast speed.

An integrated memory cell with a mem­ristor and trilayer crested barrier selector, showing repeatable nonlinear current–voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x/Ta2O5/TaN1+x selector yields large nonlinearity (>104), high endurance (>108), low variability, temperature dependence. In order to achieve extremely densities on nonvolatile (NVM) die (>100 Gbit cm–2), resistance switches, or memristors, need be connected together in arrays amortize the silicon...

Abstract The intrinsic stochasticity of the memristor can be used to generate true random numbers, essential for non-decryptable hardware-based security devices. Here, we propose a novel and advanced method numbers utilizing stochastic oscillation behavior NbO x mott memristor, exhibiting self-clocking, fast variation tolerant characteristics. number generation rate device at least 40 kb s −1 , which is fastest record compared with previous volatile memristor-based TRNG Also, its...

The conditional switching of memristors to execute stateful implication logic is an example in-memory computation potentially provide high energy efficiency and improved speed by avoiding the movement data back forth between a processing chip memory and/or storage. Since first demonstration memristor logic, significant goal has been improve cascading make it more practical. Here, we describe experimentally demonstrate nine symmetry-related Boolean operations controlling conventional...

Abstract A memristive crossbar array (MCA) is an ideal platform for emerging memory and neuromorphic hardware due to its high bitwise density capability. charge trap memristor (CTM) attractive candidate the cell of MCA, because embodied rectifying characteristic frees it from sneak current issue. Although potential CTM devices has been suggested, their practical viability needs be further proved. Here, a Pt/Ta 2 O 5 /Nb 5‐ x /Al 3‐ y /Ti stack exhibiting retention array‐level uniformity...

Green-hydrogen production by polymer electrolyte membrane water electrolysis (PEMWE) is limited the use of expensive Ir-based catalysts, presenting a key challenge in achieving low-IrOx-loaded electrode assembly (MEA). Here, we investigate abnormally poor performance and large high-frequency impedances ultralow-IrOx-loaded MEA (as low as 0.07 mg cm–2) for PEMWE. We reveal that these primarily originate from electron transport problem native oxide on Ti porous layer (PTL). Based...

Unipolar resistance switching (RS) in TiO2 thin films originates from the repeated formation and rupture of Magnéli phase conducting filaments through nano-scale transitions. By applying Johnson-Mehl-Avrami (JMA) type kinetic model to careful analysis on evolution transient current a pulse-switching, it was possible elucidate material specific filament. This methodology applied two types grown by plasma-enhanced atomic layer deposition (PEALD) sputtering. These samples have structurally...

Abstract Filamentary resistance switching (RS) is one of the more obvious and useful phenomena in family RS mechanisms. In filamentary RS, long reset time substantially large power consumption are critical obstacles for microelectronic applications. this study, an innovative solution to overcome problem suggested by stacking n‐type TiO 2 p‐type NiO films. Interestingly, stacked structure, region where filament rupture rejuvenation occurs could be arbitrarily controlled at any location...

NbOx-based Mott memristors exhibit fast threshold switching behaviors, making them suitable for spike generators in neuromorphic computing and stochastic clock security devices. In these applications, a high output amplitude is necessary level control accurate signal detection. Here, we propose materialwise solution to obtain the spikes by inserting Au nanodots into NbOx device. The enable increasing voltage modulating oxygen contents at electrode-oxide interface, providing higher ON current...