A5087817104- Silicone and Siloxane Chemistry
- Semiconductor materials and devices
- Synthesis and properties of polymers
- Advanced Sensor and Energy Harvesting Materials
- Advancements in Battery Materials
- MXene and MAX Phase Materials
- Corrosion Behavior and Inhibition
- Advanced Battery Materials and Technologies
- Recycling and Waste Management Techniques
- Advanced ceramic materials synthesis
- Supercapacitor Materials and Fabrication
- Underwater Vehicles and Communication Systems
- Indoor and Outdoor Localization Technologies
- Solid-state spectroscopy and crystallography
- Luminescence Properties of Advanced Materials
- Advanced battery technologies research
- Copper Interconnects and Reliability
- Thin-Film Transistor Technologies
- Speech and Audio Processing
- Advanced Memory and Neural Computing
- Radiation Detection and Scintillator Technologies
Korea National University of Transportation
2020-2023
Hanyang University
2016
Dankook University
2006
In this paper, we propose a near-ultrasound chirp signal-based communication for the TV's 2nd screen services. While (with under 20 kHz frequency) has been developed various applications recently, none of previous work provides perfect solution services between TVs and smart devices. This is due mainly to following real world challenges. The embedded signal in TV contents should be successfully received typical TV-watching environment by (i) delivering information at least 15 bps with...
Abstract Low‐voltage‐operating high‐performance organic field‐effect transistors (OFETs) are regarded as the building blocks of analog and digital integrated circuits for next‐generation electronics. To fulfill this, such an OFET must have high‐dielectric constant ( k ) characteristics increasing capacitance values to make enough a charge, hydrophobic surface that does not cause charge trapping, low leakage current property guarantee operating stability. This study demonstrates new strategy...
Abstract Polysilsesquioxanes (PSQs) have generated great interest as solution‐processable inorganic polymers for obtaining high‐dielectric‐constant ( k ) dielectrics. Engineering the side chains in PSQs can enhance polarization characteristics and provide different functionalities, such photopatternability ferroelectric performance. In this study, two types of UV curable high‐ are prepared by introducing epoxy‐containing to PSQs: 1) glycidyl linear groups 2) bulky cycloaliphatic groups. The...
Polysilsesquioxanes In article number 2214865, Insik In, Yong Jin Jeong, Se Hyun Kim, and co-workers prepare two types of UV-curable high-dielectric-constant polysilsesquioxanes by introducing epoxy-containing side chains: 1) glycidyl linear groups 2) bulky cycloaliphatic groups. The structure the chains influenced UV curing behavior capacitance characteristics polysilsesquioxanes. These are used to implement logic gates memory cells exhibiting low-voltage non-destructive operations.
Y2O3:Eu3+ red phosphor was prepared by the solvothermal synthesis using precursors, yttrium nitrate hydrate 0.001mol [Y(NO3)3 . 6H2O] and europium [Eu(NO3)3 5H2O], of metal salts in isopropyl alcohol-water solutions at 200°C for 5 hours. When powder sample annealed 1200°C 4 hours, X-ray diffraction peaks were evidences cubic cell formation Y2O3 with lattice parameter, a =10.6198Å, which closely compatible to previously reported data(JCPDS Card File, 41-1105 a=10.6041Å). Typically, this...
Logic Devices In article number 2104030, Jihoon Lee, Tae Kyu An, Insik In, Se Hyun Kim, and co-workers design a fancy strategy for the realization of high-k polysilsesquioxane materials apply these to low-voltage operating unit integrated devices. This work has inspired research towards further development practical organic electronics by providing methods fabricating dielectrics with various types polymeric materials.
Solution-based deposition has recently been proposed as a low-cost flexible electronics alternative. Therefore, the development of appropriate solution-processed materials for metal oxide semiconductor transistors become more important. In recent years, high dielectric constant (k) polymer insulators have developed that can withstand relatively heat until structure is restructured and be operated at low voltage with performance. We produced ladder-like polysilsesquioxanes(LPSQ) two...