Akifumi Yamamura

ORCID: 0000-0003-1790-6098
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Research Areas
  • Organic Electronics and Photovoltaics
  • Conducting polymers and applications
  • Thin-Film Transistor Technologies
  • Analytical Chemistry and Sensors
  • Advanced Sensor and Energy Harvesting Materials
  • Advanced Memory and Neural Computing
  • X-ray Diffraction in Crystallography
  • Crystallization and Solubility Studies
  • Semiconductor materials and devices
  • Nonlinear Optical Materials Research
  • Neuroscience and Neural Engineering
  • Photonic and Optical Devices
  • Quantum Dots Synthesis And Properties
  • ZnO doping and properties
  • Molecular Junctions and Nanostructures
  • Acoustic Wave Resonator Technologies
  • Force Microscopy Techniques and Applications
  • Surface Chemistry and Catalysis
  • Perovskite Materials and Applications
  • Chalcogenide Semiconductor Thin Films
  • Mechanical and Optical Resonators
  • Advanced MEMS and NEMS Technologies
  • Nanowire Synthesis and Applications
  • CCD and CMOS Imaging Sensors
  • Organic Light-Emitting Diodes Research

The University of Tokyo
2016-2023

Mie Chukyo University
2021

National Institute of Advanced Industrial Science and Technology
2020

Kanagawa Institute of Technology
2004

A wafer-scale, 2D organic single-crystalline semiconductor revolutionizes near-field communication.

10.1126/sciadv.aao5758 article EN cc-by-nc Science Advances 2018-02-02

Recent progress in the development of organic semiconductor materials has improved performance both p‐ and n‐type transistors. Currently, it is anticipated that next step evolution electronics will be to establish a reliable fabrication technique for integrated electronic devices such as plastic sensor films radio‐frequency identification (RFID) tags. Herein, new process grow line‐shaped single‐crystalline with widths on order one mm reported. To realize large‐scale complementary logic...

10.1002/aelm.201600456 article EN Advanced Electronic Materials 2017-05-10

Abstract Although high carrier mobility organic field‐effect transistors (OFETs) are required for high‐speed device applications, improving the alone does not lead to operation. Because cut‐off frequency is determined predominantly by total resistance and parasitic capacitance of a transistor, it necessary miniaturize OFETs while reducing these factors. Depositing dopant layer only at metal/semiconductor interface an effective technique reduce contact resistance. However, fine‐patterning...

10.1002/adfm.201909501 article EN Advanced Functional Materials 2020-02-05

Abstract Building on significant developments in materials science and printing technologies, organic semiconductors (OSCs) promise an ideal platform for the production of printed electronic circuits. However, whether their unique solution-processing capability can facilitate reliable mass manufacture integrated circuits with reasonable areal coverage, to what extent solution-processed devices would allow substantial reductions manufacturing costs, remain controversial. In present study, we...

10.1038/s41598-019-50294-x article EN cc-by Scientific Reports 2019-11-04

Flexible organic circuitsare fabricated with extremely high yield and good uniformity based on high-mobility solution-processed p-type n-type transistors. The continuous casting method enables the production of homogenous crystalline films. From 88.8% for D flip-flop circuits comprising 26 transistors, each transistor is estimated to be as 99.5%. As a service our authors readers, this journal provides supporting information supplied by authors. Such materials are peer reviewed may...

10.1002/aelm.201600410 article EN Advanced Electronic Materials 2016-12-15

Abstract Transistors, the most important logic elements, are maintained under dynamic influence during circuit operations. Practically, design protocols and frequency responsibility should stem from a perfect agreement between static properties. However, despite remarkable improvements in mobility for organic semiconductors, correlation device performances achieved circumstances is controversial. Particularly case of it remains unclear whether parasitic elements that relate to their unique...

10.1038/s41467-020-18616-0 article EN cc-by Nature Communications 2020-09-24

Abstract Complementary metal-oxide-semiconductor, an elementary building block, allows for a high degree of implementation logic circuits with relatively low power consumption and manufacturing cost, which plays vital role not only in current Si electronics, but also printed flexible devices. To meet the looming challenges Internet Things, p-channel thin-film transistors (TFTs) excellent mobility processability have been increasingly developed using organic semiconductors. However, owing to...

10.1088/2058-8585/ab603b article EN cc-by Flexible and Printed Electronics 2020-01-01

Abstract Solution-processed organic thin film transistors (OTFTs) are an essential building block for next-generation printed electronic devices. Organic semiconductors (OSCs) that can spontaneously form a molecular assembly play vital role in the fabrication of OTFTs. OTFT processes consist sequential deposition functional layers, which inherently brings significant difficulties realizing ideal properties because underlayers likely to be damaged by application subsequent layers. These...

10.1038/s41598-020-61536-8 article EN cc-by Scientific Reports 2020-03-13

Abstract Low-frequency noise generated by a fluctuation of current is key issue for integrating electronic elements into high-density circuit. Investigation the in organic field-effect transistors now sharing spotlight with development printed integrated circuits. The recent improvement mobility (up to 15 cm 2 V −1 s ) has allowed circuits relatively high-speed operation (~50 kHz). Therefore, an in-depth understanding feature will be indispensable further improve circuit stability and...

10.1038/s42005-018-0037-0 article EN cc-by Communications Physics 2018-07-12

Abstract Organic semiconductors (OSCs) have attracted growing attention for optoelectronic applications such as field‐effect transistors (FETs), and coherent (or band‐like) carrier transport properties in OSC single crystals (SCs) been of interest they can lead to high mobilities. Recently, p‐type SCs compatible with a printing technology used achieve high‐speed FETs; therefore, developments n‐type counterparts may be promising realizing complementary organic circuits. Herein, electron...

10.1002/adma.202003245 article EN publisher-specific-oa Advanced Materials 2020-11-16

Organic field-effect transistors (OFETs) have attracted great attention as key elements in Internet-of-Thing (IoT) devices due to their advantages of low cost and mass producibility made possible by printing technology. Such require organic semiconductors (OSCs) that intrinsically possess high carrier mobility air stability. In addition, the demand for low-voltage operation power consumption has been increasing because potential sources actual are implementable energy harvesters supply...

10.1063/5.0006651 article EN Applied Physics Letters 2020-07-20

Abstract The use of colloidal quantum dots (CQDs) as active layers for the transistors in integrated circuits is often impeded by poor compatibility CQDs films with standard lithographic processing. Successful patterning tetrabutylammonium iodide‐treated PbS demonstrated on (3‐aminopropyl)triethoxysilane (APTES) functionalized glass or aluminum oxide surfaces, using lithography. Short‐channel (4 µm) field‐effect (FETs) patterned gate electrode and film layer electron mobility 0.1 cm 2 V −1 s...

10.1002/admt.201900054 article EN cc-by-nc-nd Advanced Materials Technologies 2019-08-05

Abstract Arranging molecules into highly symmetric, topological crystal structures has been recognized as the best approach to functionalize electronic properties in molecular crystals, where constituent have assumed be rigid shape. Here, striking contrast, we demonstrate that a monolayer organic can undergo significant deformation proximity substrate, which is reflected by an asymmetry electron density profile. X-ray reflectivity and absorption spectroscopies conjunction with...

10.1038/s42005-020-0285-7 article EN cc-by Communications Physics 2020-01-23

Abstract Solution-processed single-crystal organic semiconductors (OSCs) and amorphous metal oxide (MOSs) are promising for high-mobility p- n-channel thin-film transistors (TFTs), respectively. Organic−inorganic hybrid complementary circuits hence have great potential to satisfy practical requirements. However, some chemical incompatibilities between OSCs MOSs, such as heat resistance, make it difficult rationally integrate TFTs based on solution-processed OSC MOS onto the same substrates....

10.1038/s43246-023-00331-0 article EN cc-by Communications Materials 2023-01-26

10.7567/ssdm.2016.f-1-02 article EN Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials 2016-09-27

In this paper, we present the results of a basic study on fabrication technology integrated sensors circuit, in which various based mass loading effect, conductive change, and photo-luminescence methods are piezoelectric substrate. We propose design micro-pump with simple structure for low cost. Also, experimental result shows that its controllability liquid flux is very high sensitive. Moreover, adopt Au-IDT electrodes immobilized oxidases sensing glucose concentration.

10.1109/ultsym.2003.1293148 article EN IEEE Symposium on Ultrasonics 2004-07-09
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