Very high-mobility organic transistors are fabricated with purified rubrene single crystals and high-density organosilane self-assembled monolayers. The interface minimized surface levels allows carriers to distribute deep into the by more than a few molecular layers under weak gate electric fields, so that inner channel plays significant part in transfer performance. With in-crystal less affected scattering mechanisms at interface, maximum transistor mobility reaches 18cm2∕Vs contact-free...

Patternable solution-crystallized organic transistors are developed with very high carrier mobility that exceeds 10 cm2 V−1 s−1. The devices feature a newly synthesized air-stable compound 2,9-didecyldi-naphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10-DNTT) and formed from hot solution. A method of oriented growth is introduced to obtain the single-crystalline films C10-DNTT, regulating crystallizing direction positions in single process. Detailed facts importance specialist readers...

A straightforward synthetic approach that exploits linear- and angular-shaped naphthodithiophenes (NDTs) being potential as new core structures for organic semiconductors is described. The newly established procedure involves two important steps; one the chemoselective Sonogashira coupling reaction on trifluoromethanesulfonyloxy site over bromine enabling selective formation of o-bromoethynylbenzene substructures naphthalene core, other a facile ring closing fused-thiophene rings from...

A wafer-scale, 2D organic single-crystalline semiconductor revolutionizes near-field communication.

Field-effect mobility as high 5 cm2/(V s) is achieved in solution-processed organic thin-film transistors with the development of a method for growing highly-oriented crystalline films [1]benzothieno[3,2-b]benzothiophene derivatives. A droplet solution sustained at an edge structure on inclined substrate, so that domain grows direction inclination. The oriented growth realizes excellent molecular ordering manifests itself micrometer-scale terraces surface result self-organizing function...

N-shaped organic semiconductors are synthesized via four steps from a readily available starting material. Such exhibit preferable ionization potential for p-type operation, thermally stable crystalline phase over 200 °C, and high carrier mobility up to 16 cm2 V–1 s–1 (12.1 on average) with small threshold voltages in solution-crystallized field-effect transistors. As service our authors readers, this journal provides supporting information supplied by the authors. materials peer reviewed...

V-shaped organic semiconductors have been designed and synthesized via a large-scale applicable synthetic route. Solution-crystallized films based on such molecules demonstrated high-performance transistor properties with maximum mobilities of up to 9.5 cm2 V−1 s−1 as well pronounced thermal durability 150 °C inherent in the cores. As service our authors readers, this journal provides supporting information supplied by authors. Such materials are peer reviewed may be re-organized for online...

Molecular doping: The standard model for molecular p-doping of organic semiconductors (OSCs) assumes integer charge transfer between OSC and dopant. This is in contrast to an alternative based on intermolecular complex formation instead. By systematically varying the acceptor strength it was possible discriminate two models. latter clearly favored, suggesting strategies chemical design more efficient dopants.

Transistor parameter extraction by the conventional transconductance method can lead to a mobility overestimate. Organic transistors undergoing major contact resistance experience significant drop in upon mild annealing. Before annealing, strong field-dependent yields nonlinear transfer curves with locally high transconductances, resulting After below 200 Ω cm is achieved, which stable over wide V(G) range.

A state-of-the-art organic semiconductor that has high effective electron mobility and outstanding robustness was developed.

We here report naphtho[2,1-b:6,5-b']difuran derivatives as new p-type semiconductors that achieve hole mobilities of up to 3.6 cm(2) V(-1) s(-1) along with high I(on)/I(off) ratios in solution-processed single-crystal organic field-effect transistors. These features originate from the dense crystal packing and resulting large intermolecular π-orbital overlap well small reorganization energy, all which radius an oxygen atom.

Gate-voltage dependence of carrier mobility is measured in high-performance field-effect transistors rubrene single crystals by simultaneous detection the longitudinal conductivity ${\ensuremath{\sigma}}_{\ensuremath{\square}}$ and Hall coefficient ${R}_{H}$. The ${\ensuremath{\mu}}_{H}$ ($\ensuremath{\equiv}{\ensuremath{\sigma}}_{\ensuremath{\square}}{R}_{H}$) reaches nearly $10\text{ }\text{ }{\mathrm{cm}}^{2}/\mathrm{V}\text{ }\mathrm{s}$ when relatively low-density carriers...

High-mobility solution-processed organic transistors are developed based on a hybrid of solution-crystallized air-stable semiconductor 2,7-dioctyl[1]ben­zo­thieno[3,2-b][1] benzothiophene (C8-­ BTBT) and 2,3,5,6-tetrafluoro-7,7,8,8-tetra­cy­anoquinodimethane (F4-TCNQ) top layers. Charge mobility as high 6 cm2/Vs is achieved, owing to the almost perfectly periodic crystal packing efficient charge supply from acceptor.

Significant progress has been made in both molecular design and fundamental scientific understanding of organic semiconductors (OSCs) recent years. Suitable charge-carrier mobilities (μ) have obtained by many high-performance OSCs (μ > 10 cm2 V-1 s-1), but drawbacks remain, including low solution processability poor thermal durability. In addition, since aggregation involves weak intermolecular interactions, the molecules are perpetually motion, even solid state, which disrupts transport....

High-mobility and air-stable n-type organic field transistors based on solution-crystallized N,N′-1H,1H-perfluoro­butyldicyanoperylene carboxydi-imide (PDIF- CN2) are developed. Electron mobility as high 1.3 cm2 V−1 s−1 is achieved owing to the almost-perfect periodic crystal packing.

A method for continuously growing large-domain organic semiconductor crystals is developed to fabricate multi-array high-mobility transistors. An solution held at the edge of a moving blade grow large-area crystalline thin film. The continuous evaporation solvent around 100 °C, while supplied same rate, allows steadily on substrate several inches in size. performance arrays field-effect transistors based crystal films excellent, with mobility 5–10 cm2 V-1 s-1.

Organic neutral π-monoradicals are promising semiconductors with balanced ambipolar carrier-transport abilities, which arise from virtually identical spatial distribution of their singly occupied and unoccupied molecular orbitals, SOMO(α) SOMO(β), respectively. Herein, we disclose a boron-stabilized triphenylmethyl radical that shows outstanding thermal stability resistance toward atmospheric conditions due to the substantial spin delocalization. The is used fabricate organic Mott-insulator...

ConspectusOrganic semiconductors (OSCs) have attracted much attention because of their potential applications for flexible and printed electronic devices thus been extensively investigated in a variety research fields, such as organic chemistry, solid-state physics, device physics engineering. Organic thin-film transistors (OTFTs), class OSC-based devices, expected to be an alternative silicon-based metal oxide semiconductor field-effect (MOSFETs), which is the indispensable element most...

We herein report ambipolar organic field-effect transistors based on rubrene single crystals. The operate in both the p- and n-channel regimes depending upon bias conditions. Hole electron mobilities of 1.8 1.1×10−2cm2∕Vs, respectively, were derived from saturated currents. appearance an enhancement mode crystals wide-band-gap semiconductors (∼2.6eV) is ascribed to reduction traps at semiconductor-dielectric interface using a hydroxyl-free gate dielectric.

We report ambipolar field-effect characteristics observed in metal-insulator-semiconductor transistor (MISFET) device structures based on organic single crystals of the quasi-one-dimensional (Q1D) Mott-Hubbard insulator (BEDT-TTF)$({\mathrm{F}}_{2}\text{TCNQ})$. The main aspects measured properties are well described by symmetric-gate FET model, which considers symmetry triode structures. temperature-dependent nonlinear nature gated-current-voltage indicates that carrier injections present...

Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences Hall resistance of two soluble pentacene derivatives can be explained with different degrees carrier delocalization being limited by thermal lattice fluctuations. A combination measurements, optical spectroscopy, theoretical simulations...

High-mobility organic transistors are fabricated on both surfaces of approximately 1-μm-thick rubrene crystals, molecularly flat over an area 10×10μm2. A thin platelet 9,10-diphenylanthracene single crystal and surface-passivated SiO2 used for the gate insulators. Because minimized densities hole-trapping levels at interfaces in crystal, field-induced carriers do not necessarily reside near interface but distributed bulk semiconductor by adjusting two voltages. Making use highly mobile inner...