A5022962486- Nanowire Synthesis and Applications
- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Electrocatalysts for Energy Conversion
- Silicon Nanostructures and Photoluminescence
- Perovskite Materials and Applications
- Graphene research and applications
- Silicon Carbide Semiconductor Technologies
- MXene and MAX Phase Materials
- Conducting polymers and applications
- Advanced battery technologies research
- 2D Materials and Applications
- Carbon and Quantum Dots Applications
- Electrochemical sensors and biosensors
- Nuclear Materials and Properties
- Crystal Structures and Properties
- Advanced Photocatalysis Techniques
- Radioactive element chemistry and processing
- Chalcogenide Semiconductor Thin Films
- Crystallization and Solubility Studies
- Gold and Silver Nanoparticles Synthesis and Applications
- Synthesis and Reactivity of Heterocycles
- Plasmonic and Surface Plasmon Research
- Low-power high-performance VLSI design
- Copper-based nanomaterials and applications
The University of Texas at El Paso
2020-2023
University of South Carolina
2016-2021
University of Warwick
2021
United States Air Force Research Laboratory
2021
Georgia Institute of Technology
2021
University of Wisconsin–Madison
2021
Carnegie Mellon University
2021
Indian Institute of Technology Delhi
2014-2015
Mississippi State University
2002
Fullerene-based low-dimensional (LD) heterostructures have emerged as excellent energy conversion materials. We constructed van der Waals 1T-MoS2/C60 0D-2D via a one-pot synthetic approach for catalytic hydrogen generation. The interfacial 1T-MoS2–C60 and C60–C60 interactions well their electrocatalytic properties were finely controlled by varying the weight percentages of fullerenes. 1T-MoS2 platforms provided novel template formation C60 nanosheets (NSs) within very narrow fullerene...
Here, we report average reflectance reduction of ∼8% in wavelength range 300–1100 nm after coupling surface plasmon resonances (SPRs) silver nanoparticles (NPs) to textured silicon (T-Si) surface. The enhancement photocurrent from T-Si solar cell off-resonant SPR region observed due better radiative efficiency NPs leading outflow scattered far-field into maximized power generating electrons. Improvement series resistance, fill factor, and open-circuit voltage (insensitive size morphology)...
Fluorescent graphene quantum dots (GQDs) prepared from low-cost and sustainable precursors are highly desirable for various applications, including luminescence-based sensing, optoelectronics, bioimaging. Among different natural precursors, the unique structural compositional variety abundance of aromatic carbon in lignin make it a renewable precursor green synthesis advanced carbon-based materials GQDs. However, inferior photoluminescence yield GQDs lignin, limits their practical utility....
Defect passivation and tailoring of perovskite–charge transport layer interfaces are critical strategies to minimize the recombination losses improve power conversion efficiency (PCE) in perovskite solar cells (PSCs). Herein, we use titanium carbide MXene (Ti3C2Tx) tailor electronic properties electron (ETL) ETL/perovskite interface inverted (p–i–n) PSCs correlate them observed PCE. doping a [6,6]-phenyl-C61-butyric acid methyl ester (M-PC61BM)-based ETL results an improved electrical...
Facile electron transport and intimate electronic contact at the catalyst-electrode interface are critical for ideal performance of electrochemical devices such as glucose biofuel cells biosensors. Here, through a comprehensive experimental-theoretical exploration, we demonstrate that engineering interfacial properties, including dynamics, affinity, electrode-catalyst-adsorbate electrical synergy, electrocatalytically active surface area, can lead to highly efficient graphene-based devices....
Abstract We demonstrate high-external quantum efficiency (∼50%) solar-blind AlGaN p–n junction photodetectors with high-Al content multiple wells (MQWs). A peak responsivity of 0.1 A/W at 250 nm, which falls >10 3 by 280 indicates that the optical absorption is dominated MQW structures. At a reverse bias 0.5 V, dark current <0.1 pA. The readout RC-limited time response measured as 0.4 µs, and an achievable detector 2 ns estimated. devices do not show internal gain, accounts for their...
In this letter, we report the UV detection characteristics of an epitaxial graphene (EG)/SiC based Schottky emitter bipolar phototransistor (SEPT) with EG on top as transparent layer. Under 0.43 μW illumination, device showed a maximum common current gain 113, when operated in mode. We argue that avalanche and photoconductive can be excluded, indicating minority carrier injection efficiency, γ, high 99% at EG/p-SiC junction. This γ is attributed to large, highly asymmetric barrier, which...
We report the performance of a bipolar epitaxial graphene (EG)/p-SiC/n+-SiC UV phototransistor fabricated with Schottky (EG)/SiC junction grown using SiF4 precursor. The showed responsivity as high 25 A/W at 250 nm in emitter (SE) mode. collector (SC) mode 17 270 visible rejection (270 nm:400 nm)&gt;103. fastest response was seen SC-mode, 10 ms turn-on and 47 turn-off, noise equivalent power 2.3 fW 20 Hz specific detectivity 4.4 × 1013 Jones. is due to internal gain from action. observe...
Tailoring the curvature-directed lattice strain in GNRs along with optimal surface anchoring of molybdenum disulfide (MoS2) quantum dots (QDs) can lead to a unique heterostructure Pt-like HER activity (onset potential -60 mV). The curvature-induced electronic charge redistribution at curved region graphene nanoribbons allows facile GNR-MoS2 interfacial transfer heterostructure, making sulfur (S) more active towards HER. density functional theory (DFT) calculations confirmed electronically...
Graphene layers grown epitaxially on SiC substrates are attractive for a variety of sensing and optoelectronic applications because the graphene acts as transparent, conductive, chemically responsive layer that is mated to wide-bandgap semiconductor with large breakdown voltage. Recent advances in control epitaxial growth doping epilayers have increased range electronic device architectures accessible this system. In particular, recently-introduced Schottky-emitter bipolar phototransistor...
Abstract Designing electrocatalysts that excel in hydrogen and oxygen electrochemistry is crucial for sustainable generation through electrochemical water splitting. This study presents a novel tricomponent catalyst composed of an alginate hydrogel (AL) infused with single‐walled carbon nanotubes (CNTs) copper oxide (CuO) nanoparticles. The exhibits benchmark‐close bifunctional activity toward evolution reaction (HER) (OER) under alkaline conditions. aerophobic nature the AL‐gel facilitates...
Methods for the straightforward, room temperature synthesis of UO 2+ x nanoparticles and thin films using solution processable, molecular uranium( iv ) compounds is described.
Wideband gap semiconductor materials such as SiC and GaN are popular for UV detection applications. Also, epitaxial growth of graphene on is suitable the development large area electronic optoelectronic devices based EG/SiC junctions. Epitaxial graphene(EG) grown forms a Schottky junction with highly asymmetric barrier both electrons holes. We have previously reported high gain bipolar photo-transistor detector In this present study, we report current-voltage (I-V) characteristics these...
An enantioselective intermolecular CÀHs ilylation of heteroarenes for the synthesis acyclicS i-stereogenic silanes is reported by Chuan He et al. in their Communication (e202117820).
Low voltage CMOS interface circuitry with self-correcting pull-up and pull-down output resistances to match the printed circuit board transmission line impedance, suitable for use in both series parallel high-speed digital communication between integrated circuits interfacing heterogeneous logic (e.g. ECL), is described. The driver impedance controlled by of a pull-down, binary weighted transistor ladder conjunction an A-to-D convertor external resistor, representing impedance.< <ETX...