Kashif M. Awan

ORCID: 0000-0003-1857-2907
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About
Contact & Profiles
Research Areas
  • Photonic and Optical Devices
  • Advanced Fiber Laser Technologies
  • Plasmonic and Surface Plasmon Research
  • Optical Network Technologies
  • Photonic Crystals and Applications
  • Semiconductor Quantum Structures and Devices
  • Orbital Angular Momentum in Optics
  • Metamaterials and Metasurfaces Applications
  • Semiconductor Lasers and Optical Devices
  • GaN-based semiconductor devices and materials
  • Superconducting and THz Device Technology
  • Nanowire Synthesis and Applications
  • Terahertz technology and applications
  • Ga2O3 and related materials
  • Photorefractive and Nonlinear Optics
  • Mechanical and Optical Resonators
  • Physics of Superconductivity and Magnetism
  • Neural Networks and Reservoir Computing
  • Spectroscopy and Laser Applications
  • Nonlinear Optical Materials Studies
  • Semiconductor materials and devices
  • Semiconductor materials and interfaces
  • Advanced Fiber Optic Sensors
  • Quantum Dots Synthesis And Properties
  • Electronic and Structural Properties of Oxides

Washington University in St. Louis
2023-2025

University of British Columbia
2019-2024

University of Ottawa
2014-2021

Max Planck - University of Ottawa Centre for Extreme and Quantum Photonics
2016

KTH Royal Institute of Technology
2012-2014

Universal quantum computing holds the promise to fundamentally change today’s information-based society, yet a hardware platform that will provide clear path fault-tolerant remains elusive. One recently proposed involves use of circuit-bound photons build cluster states and perform one-way measurement-based computations on arrays long-coherence-time solid-state spin qubits. Herein, we discuss challenges are faced during any practical implementation this architecture by itemizing key physical...

10.1063/5.0049372 article EN APL Photonics 2021-07-01

Group III–V semiconductors are based on the elements of groups III and V periodic table. The possibility to grow thin-films made binary, ternary, quaternary alloys with different fractions their constituent allows for precise engineering optical properties. In addition, since many compounds direct-bandgap semiconductors, they suitable development photonic devices integrated circuits, especially when monolithic integration is required. Moreover, strong nonlinearities materials enable a...

10.1080/23746149.2022.2097020 article EN cc-by Advances in Physics X 2022-07-27

Phase transition in parity-time (PT) symmetry is one of the most intriguing discoveries non-Hermitian physics, giving rise to plenty physical phenomena and strategies develop advanced devices systems, such as unconventional lasers, nonreciprocal transmission, enhanced sensitivity. Floquet PT-symmetric systems are characterized by time-periodic Hamiltonians, which gain or loss modulated steer PT phase, providing an additional dimension for realizing phase transitions. In this study, we...

10.1126/sciadv.adu4653 article EN cc-by-nc Science Advances 2025-03-07

We report on fabrication and optical characterization of GaAs nanopillar (NP) arrays, obtained using a combination low-cost mask generation by self-assembled silica particles (nanosphere lithography) dry etching. Tapered structures (conical frustum NP arrays) are fabricated appropriate optimization process parameters. Significant suppression surface reflectance is observed for both geometries over broad wavelength range. Simulations, based finite difference time domain (FDTD) method, show...

10.1364/ome.2.001671 article EN cc-by Optical Materials Express 2012-10-29

Extensive research has focused on Mie modes in dielectric nanoresonators, enabling the creation of thin optical devices surpassing their bulk counterparts. This study investigates interactions between two fundamental modes, electric and magnetic dipoles, epsilon-near-zero (ENZ) mode. Analytical, simulation, experimental analyses reveal that presence ENZ substrate significantly modifies these despite a large size mismatch. Electric dipole both with ∼12 THz line widths, exhibit 21 26...

10.1021/acs.nanolett.3c03301 article EN Nano Letters 2023-12-01

We have experimentally demonstrated broadband tuneable four-wave mixing in AlGaAs nanowires with the widths ranging between 400 and 650 nm lengths from 0 to 2 mm. performed a detailed experimental study of parameters influencing FWM performance these devices (experimental conditions nanowire dimensions). The maximum signal-to-idler conversion range was 100 nm, limited by tuning pump source. efficiency, defined as ratio output idler power signal power, -38 dB. In support our explanation...

10.1364/oe.23.022477 article EN cc-by Optics Express 2015-08-18

Abstract A broadband and sensitive time‐resolved terahertz (THz) configuration relying on noncollinear optical interactions is presented. This scheme enables a higher THz generation detection efficiency in nonlinear crystals. The concept relies pair of thick (2 mm) GaP crystals with phase grating etched their surface to achieve matching between diffracted near‐infrared pulse wave propagating at normal incidence. system compared standard collinear based thin (0.2 and, while both systems...

10.1002/adom.202101136 article EN cc-by-nc-nd Advanced Optical Materials 2021-10-19

Nanostructured surfaces, or metasurfaces, allow exquisite control of linear and nonlinear optical processes by reshaping the amplitude, phase, polarization electric magnetic fields near wavelength-scale heterogeneities. Recently, metasurfaces have broken new ground in high-field attosecond science where they been utilized to amplify emission high-order harmonics femtosecond infrared laser pulses, a notoriously inefficient process, enhancing incident field, shape emitted high space. Here we...

10.1364/optica.464445 article EN cc-by Optica 2022-08-08

Atomically thin cuprates exhibiting a superconducting phase transition temperature similar to that of the bulk have recently been realized, although device fabrication remains challenge and limits potential for many novel studies applications. Here, we use an optical pump–probe approach noninvasively study unconventional superconductivity in atomically Bi2Sr2Ca0.92Y0.08Cu2O8+δ (Y-Bi2212). Apart from finding response due is Y-Bi2212, observe sign amplitude signal flakes vary significantly...

10.1021/acs.nanolett.4c00559 article EN Nano Letters 2024-03-19

Gallium nitride (GaN), a wide-bandgap III-V semiconductor material with bandgap wavelength λ g = 366 nm (for Wurtzite GaN) and transparency window covering the visible spectrum, has large number of applications for photonics optoelectronics.However, optical quality this suffers from growth imperfections due to lack suitable substrate.Recent studies have shown that GaN grown on (-201) β -Ga 2 O 3 (gallium oxide) better lattice matching hence superior as compared traditionally Al (sapphire).In...

10.1364/ome.8.000088 article EN cc-by Optical Materials Express 2017-12-19

The authors report on the fabrication of GaAs nanopillars with different profiles/topologies using colloidal lithography and dry etching. shapes dimensions were successfully fabricated inductively coupled plasma reactive ion Two etch chemistries CH4/H2/Cl2 Ar/Cl2 investigated. nanopillar arrays had a typical period ∼500 nm, depths could be varied from few nanometers to 4 μm. chemistry optimized gas flows powers is shown produce smooth sidewalls compared those chemistry. have appreciably...

10.1116/1.4862976 article EN Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena 2014-01-30

Efficient, broadband terahertz detection through electro-optic sampling is an enabling technology for numerous applications, including time-resolved spectroscopy of condensed matter systems and fundamental investigations the quantum vacuum. The technique inherently sensitive, but ultimately limited by intrinsic optical properties known nonlinear crystals. In this study authors imprint a phase grating on surface crystal, to define noncollinear geometry inside crystal. This allows improved...

10.1103/physrevapplied.12.031003 article EN Physical Review Applied 2019-09-26

Plasmonic metasurfaces are promising as enablers of nanoscale nonlinear optics and flat optical components. Nonlinear responses such determined by the properties individual plasmonic meta-atoms. Unfortunately, no simple methods exist to determine (hyperpolarizabilities) meta-atoms hindering design metasurfaces. Here, we develop equivalent RLC circuit (resistor, inductor, capacitor) model estimate their second-order properties, that is, first-order hyperpolarizability in spectral range. In...

10.1021/acs.nanolett.0c02991 article EN Nano Letters 2020-12-24

Commercial silicon photonic (SiP) biosensor architectures rely on expensive swept-tunable lasers that limit their use for widespread, point-of-care applications. An alternative is the of fixed wavelength integrated directly a platform. This study investigates design considerations such architectures.

10.1117/12.2579095 article EN 2021-03-04

We propose several designs of nonlinear optical waveguides based on quaternary III-V semiconductors AlGaAsSb and InGaAsP. These semiconductor materials have been widely used for laser sources. Their properties, however, yet remain unexplored, while the definitely hold promise photonics on-a-chip. The latter argument is fact that compounds tend to exhibit high values susceptibilities, absorption in these can be minimized wavelength range interest through a proper selection material...

10.1364/ao.56.005532 article EN Applied Optics 2017-06-28

We propose a strategy to improve sensing performance of sub-wavelength-grating (SWG) waveguide-based sensors by introducing substrate-overetch (SOE) geometry. The proposed SOE-SWG waveguide shows enhanced analyte interaction and reduced group index, which improves the sensitivity resonator-based sensors. SiO2 overetch process was realized in Ar/C4F8/O2 plasma for 40 sec with SiO2/Si selectivity 10:1, obtaining 285-nm anisotropic layer. Sensor architecture is characterized using isopropyl...

10.1364/ol.44.005981 article EN Optics Letters 2019-12-05

Third-harmonic generation (THG) in silicon nitride waveguides is an ideal source of coherent visible light, suited for ultrafast pulse characterization, telecom signal monitoring and self-referenced comb due to its relatively large nonlinear susceptibility CMOS compatibility. We demonstrate third-harmonic where a fundamental transverse mode at 1,596 nm phase-matched TM

10.1515/nanoph-2024-0120 article EN cc-by Nanophotonics 2024-05-30

Silicon photonic crystal waveguides have enabled a range of technologies, yet their fabrication continues to present challenges. Here, we report on post-processing method that allows us tune the operational wavelength slow-light in concert with optical characterization, offsetting effects hole-radii and slab thickness variations. Our consist wet chemical surface oxidation, followed by oxide stripping. Theoretical modelling shows changes behavior were predictable, hence controlled tuning can...

10.1364/ol.40.001952 article EN Optics Letters 2015-04-20

We experimentally demonstrate that the spectral sensitivity of a Mach-Zehnder (MZ) interferometer can be enhanced through structural slow light. observe 20-fold resolution enhancement by placing dispersion-engineered, slow-light, photonic-crystal waveguide in one arm fiber-based MZ interferometer. The increases roughly linearly with group index, and we have quantified terms density interference fringes. These results show promise for use slow-light methods developing novel tools optical...

10.1364/ol.41.001431 article EN publisher-specific-oa Optics Letters 2016-03-19

A collection of $N$ emitters can exhibit an $N$-fold broadening the radiative linewidth resulting from development a macroscopic dipole moment. Such has previously been observed in systems several nanoparticles and often described terms superradiant behavior. However, understanding physics behind dependence on number irradiated is far complete. In this paper, we present theoretical experimental results that elucidate mechanism plasmonic draw connection with phenomenon Dicke superradiance. We...

10.1103/physreva.100.043814 article EN Physical review. A/Physical review, A 2019-10-11

Photonic wire bonding offers the opportunity to co-package lasers and silicon chips, solving a long-standing problem in integrated photonics, enabling foundries offer multi-project wafer runs featuring lasers.

10.1109/gfp51802.2021.9673842 article EN 2021-12-01
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