A5032754839- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- ZnO doping and properties
- Photocathodes and Microchannel Plates
- Metal and Thin Film Mechanics
- Advanced materials and composites
- Semiconductor materials and devices
- Acoustic Wave Resonator Technologies
- Advanced ceramic materials synthesis
- Aluminum Alloys Composites Properties
- Nanowire Synthesis and Applications
- solar cell performance optimization
- Plant Physiology and Cultivation Studies
- Seed Germination and Physiology
- Advanced Combustion Engine Technologies
- Crop Yield and Soil Fertility
- Escherichia coli research studies
- Thermal properties of materials
- Plant-Microbe Interactions and Immunity
- Underwater Acoustics Research
- Heat transfer and supercritical fluids
- Flowering Plant Growth and Cultivation
- Berry genetics and cultivation research
- Tunneling and Rock Mechanics
Peking University
2019-2025
Sichuan Agricultural University
2019-2024
China Pharmaceutical University
2024
Huazhong University of Science and Technology
2012-2019
Collaborative Innovation Center of Quantum Matter
2019
Yale University
2014-2015
University of California, Santa Barbara
2011-2014
University of California System
2013
We demonstrate high quantum efficiency InGaN/GaN multiple well (QW) solar cells with spectral response extending out to 520 nm. Increasing the number of QWs in active region did not reduce carrier collection for devices 10, 20, and 30 QWs. Solar an intentionally roughened p-GaN surface exhibited a peak external (EQE) 70.9% at 390 nm, EQE 39.0% 450 open circuit voltage 1.93 V, short current density 2.53 mA/cm2 under 1.2 suns AM1.5G equivalent illumination.
Summary Pre‐harvest sprouting (PHS), the germination of grain before harvest, is a serious problem resulting in wheat yield and quality losses. Here, we mapped PHS resistance gene PHS‐3D from synthetic hexaploid to 2.4 Mb presence–absence variation (PAV) region found that its effect was attributed pleiotropic Myb10‐D by integrated omics functional analyses. Three haplotypes were detected this PAV among 262 worldwide lines 16 Aegilops tauschii , percentages containing approximately 40% lower...
Solving the doping asymmetry issue in wide-gap semiconductors is a key difficulty and long-standing challenge for device applications. Here, desorption-tailoring strategy proposed to juggle carrier concentration transport. Specific p-doping Al-rich AlGaN, self-assembled p-AlGaN superlattices with an average Al composition of over 50% are prepared by adopting this approach. The hole as high 8.1 × 1018 cm-3 thus realized at room temperature, which attributed significant reduction effective Mg...
Abstract AlGaN‐based ultraviolet light‐emitting diodes (UV‐LEDs) have the advantages of mercury (Hg) pollution free, small size, high efficiency, and so on, are widely used in military, medical, industrial fields, which considered to be most promising alternative traditional Hg lamps. Great efforts made over past few decades improve device performance, thereby meeting commercial production application requirements UV‐LEDs, is always accompanied by a series interesting physical topics. In...
The properties of quantum well carrier escape were studied by varying barrier thicknesses in InGaN/GaN multi-quantum solar cell devices. dependence the photocurrent on applied bias and temperature exhibited indicative mechanisms thermionic emission tunneling, with tunneling dominating for thin barriers high fields. Simulations using a self-consistent drift-diffusion Schrödinger solver analytical formulas extracted lifetimes. By employing sufficiently barriers, it was found that lifetimes can...
Abstract The development of semiconductors is always accompanied by the progress in controllable doping techniques. Taking AlGaN-based ultraviolet (UV) emitters as an example, despite a peak wall-plug efficiency 15.3% at wavelength 275 nm, there still huge gap comparison with GaN-based visible light-emitting diodes (LEDs), mainly attributed to inefficient AlGaN increase Al composition. First, p-doping Al-rich long-standing challenge and low hole concentration seriously restricts carrier...
High external quantum efficiency (EQE) p-i-n heterojunction solar cells grown by NH3-based molecular beam epitaxy are presented. EQE values including optical losses greater than 50% with fill-factors over 72% when illuminated a 1 sun AM0 spectrum. Optical absorption measurements in conjunction indicate an internal 90% for the InGaN absorbing layer. By adjusting thickness of top p-type GaN window contact layer, it is shown that short-wavelength (<365 nm) limited minority carrier...
Abstract We attempt to improve the light extraction of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) by introducing a highly transparent p-type layer together with reflective Rh/Al electrodes. The p-GaN contact is thinned balance Ohmic and DUV transmittance, which helps electrodes realize high reflection as well good electrical performance. After optimization, present reflectance greater than 70% specific resistivity 3.75 × 10 −4 Ω·cm 2 . Due improvement in efficiency,...
Improving light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet (DUV) emitting diodes (LEDs) has been attempted by thinning the p-AlGaN/p-GaN layer and adopting Ni/Au/Al composite electrodes. It is found that thin can reduce absorption electrodes achieve high reflectivity Ohmic contact to ensure enhancement maintain fine electrical properties. By this approach, maximum external quantum DUV-LEDs with optimized reflective increased 40%, compared conventional Ni/Au over whole current range.
Enhancing the conductivity in Al-rich n-AlGaN is a key issue for realizing AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) with low operating voltage and high wall-plug efficiency, especially planar geometry of flip–chip configuration. An approach modulation doping herein proposed, where an alternating-layer structure consisting Si-doped unintentionally doped AlGaN assembled to achieve spatial separation electron activation transport. As massive electrons diffuse from AlGaN:Si layer...
AlGaN-based deep-ultraviolet light emitting diodes adopting an embedded delta-AlGaN thin layer with Al composition higher than that in conventional barriers have been investigated. The experimental result shows when the current is below 250 mA, maximum of external quantum efficiency and output power for proposed structure reach severally 1.38% 10.1 mW, which are enhanced significantly by 160% 197%, respectively, compared to ones, showing a tremendous improvement. We attribute inserted...
Enhancement of light extraction efficiency (LEE) AlGaN-based deep-ultraviolet (DUV) emitting diodes (LEDs) has been attempted by adopting Ag-nanodots/Al reflective electrodes on a highly transparent complex p-type layer. By thinning the p-GaN to several nm, DUV layer is achieved, making it meaningful for application composed Ag-nanodots and Al film allow most emitted upward be reflected back sapphire side. this approach, maximum output power external quantum DUV-LEDs with optimized Ag...
Pre-harvest sprouting (PHS) is a significant threat to global food security due its association with losses in both yield and quality. Among the genes involved PHS resistance wheat, PHS-3D (TaMyb10-D) plays crucial role. Here, we characterized sequence variations of TaMyb10 416 bread wheat 302 Aegilops tauschii accessions. Within TaMyb10-A sequences, identified deletion ranging from 214 305 bp signal amino acid coding region, present 61.3% Similarly, 79.3% TaMyb10-B sequences within third...
This article introduced a unique production process of diamond/Cu composite materials via spark plasma sintering. Moreover, effects Si-coated diamond particles and volume fraction on heat conduction were examined. research presented yielded higher than that the samples with uncoated particles. It was found materials, including 50% particles, relatively 535 W/mK along relative density 96.3%. The phases present identified by X-ray diffraction microstructures studied scanning electron...
The drugs extending healthspan in clinic have always been searched. Nitazoxanide is an FDA-approved clinical antiprotozoal drug. rapidly metabolized to tizoxanide after absorption vivo. Our previous studies find that nitazoxanide and its metabolite induce mild mitochondrial uncoupling activate cellular AMPK, oral protects against experimental hyperlipidemia, hepatic steatosis, atherosclerosis. Here, we demonstrate both extend the lifespan of C. elegans through Akt/AMPK/sir 2.1/daf16 pathway....
The effects of the radio frequency (RF) bias power inductively coupled plasma etching on electrical properties n-type Ohmic contact have been investigated. By reducing RF power, a high-quality has achieved n-Al0.70Ga0.30N, with specific resistivity 1.2 × 10−4 Ω cm2. It is confirmed that low-power introduces fewer acceptor-state defects etched surface, which not only reduces compensation for electrons but also degree oxidation providing favorable conditions improving metal–semiconductor contacts.
The parasitic hole loss during injection is experimentally unveiled in AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), which attributed to electron accumulation at the interface of active region and blocking layer. It demonstrated that arises mainly through non-radiative recombination process, making it unnoticeable under normal operating conditions, e.g., room temperature. A strategy DUV-LEDs featuring ending with a well layer accordingly proposed propel into last quantum...
Carrier transport in AlGaN-based deep ultraviolet (DUV) light emitting diodes (LEDs) with the wavelength of 273 nm has been investigated by introducing polarization modulated electron blocking layer (EBL) that adopts an Al composition and thickness graded multiple quantum barriers (MQB) structure. The experimental result shows maximum output power external efficiency for proposed structure at current 250 mA are 9.6 mW 1.03% respectively, severally increasing 405% 249% compared to traditional...
Developing efficient active region structures with low sensitivity to threading dislocation density (TDD) is of great technical significance for AlGaN-based deep ultraviolet (DUV) light-emitting devices. Here, we propose an strategy by introducing bunching effect form self-assembled sidewall quantum wells (SQWs) much stronger carrier confinement, resulting in a significant enhancement internal efficiency (from 46% 59%) compared the commonly adopted multiple (MQWs) due lower TDD. As demo, DUV...
Growth of AlGaN-based multiple quantum wells (MQWs) with an IQE > 80% at room temperature has been realized on nano-patterned sapphire substrates. A DUV-LED device is then fabricated taking such high MQWs as the active region.