A5078489462- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Conducting polymers and applications
- Organic Electronics and Photovoltaics
- Nanowire Synthesis and Applications
- Perovskite Materials and Applications
- Electronic and Structural Properties of Oxides
- Thin-Film Transistor Technologies
- Transition Metal Oxide Nanomaterials
- Neuroscience and Neural Engineering
- Neural dynamics and brain function
- Phase-change materials and chalcogenides
- Radio Frequency Integrated Circuit Design
- Analog and Mixed-Signal Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Semiconductor Detectors and Materials
- Electrostatic Discharge in Electronics
- Semiconductor materials and interfaces
- Photoacoustic and Ultrasonic Imaging
- 2D Materials and Applications
- Nanoplatforms for cancer theranostics
- Multilevel Inverters and Converters
- ZnO doping and properties
Shandong Academy of Agricultural Sciences
2025
Shandong Normal University
2025
Shanghai Institute of Technical Physics
2024-2025
University of Chinese Academy of Sciences
2007-2025
East China Jiaotong University
2025
Nanjing Normal University
2024
Institute of Soil Science
2024
Singapore University of Technology and Design
2018-2024
Beijing University of Chinese Medicine
2024
Northwestern Polytechnical University
2023
Abstract Combustible hydrocarbon gases, typified by methane, are invisible, odorless, and imperceptible, yet they pose significant hazards to human safety the environment. Therefore, monitoring these gases is crucial in managing mitigating potential hazards. Here, a gas sensing system proposed based on non‐dispersive infrared absorption spectroscopy (NDIR) technique. Its core component home‐built indium arsenide (InAs) semiconductor mid‐wavelength photodetector. By material growth device...
The 1-bit full adder circuit is a very important component in the design of application specific integrated circuits. This paper presents novel low-power multiplexer-based that uses 12 transistors (MBA-12T). In addition to reduced transition activity and charge recycling capability, this has no direct connections power-supply nodes, leading noticeable reduction short-current power consumption. Intensive HSPICE simulation shows new more than 26% savings over conventional 28-transistor CMOS it...
Abstract High‐performance unipolar n‐type conjugated polymers (CPs) are critical for the development of organic electronics. In current paper, four “weak donor–strong acceptor” CPs based on pyridine flanked diketopyrrolopyrrole (PyDPP), namely PPyDPP1‐4FBT, PPyDPP2‐4FBT, PPyDPP1‐4FTVT, and PPyDPP2‐4FTVT, synthesized via direct arylation polycondensation by using 3,3′,4,4′‐tetrafluoro‐2,2′‐bithiophene (4FBT) or ( E )‐1,2‐bis(3,4‐difluorothien‐2‐yl)ethene (4FTVT) as weak donor unit. All...
Two NIR-absorbing non-fullerene acceptors <bold>IDT2Se</bold> and <bold>IDT2Se-4F</bold> with selenophene as π bridges displayed high PCEs.
Learning scheme is the key to utilization of spike-based computation and emulation neural/synaptic behaviors toward realization cognition. The biological observations reveal an integrated spike time- rate-dependent plasticity as a function presynaptic firing frequency. However, this rate-temporal learning has not been realized on any nano devices. In paper, such successfully demonstrated memristor. Great robustness against spiking rate fluctuation achieved by waveform engineering with aid...
Four donor (D)–acceptor (A) conjugated polymers with isoindigo[7,6-g]isoindigo ([3E,8E]-3,8-bis(2-oxoindolin-3-ylidene)-6,8-dihydroindolo[7,6-g]indole-2,7(1H,3H)-dione, DIID) as A-unit and thiophene derivatives D-units were synthesized by Stille polycondensation. Optical electrochemical properties of the studied UV–vis–NIR absorption spectrometer cyclic voltammetry. Compared isoindigo-based analogues, display much broader spectra (covering 400–950 nm) remarkably lower bandgaps (ca. 1.3 eV)....
Physically transient electronics have attracted increasing attention recently due to their potential as the basis for building "green" and biomedical devices. In development of devices applications, however, dilemma between strictly required biodegradability device performance has brought great difficulties material selection. this paper, we introduced silk fibroin dielectric layer fabricate biodegradable resistive memory Comprising a W/silk fibroin/Mg sandwich structure, stable bipolar...
This letter presents a high-speed silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cell in gate-all-around Si-nanowire (NW) architecture, which is fabricated by using top-down process technology. The NW exhibits faster program and erase (P/E) speed compared to the corresponding planar device; 1 mus for programming ms erasing at V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> = plusmn11 with threshold voltage shift...
Band alignment of resistive random access memory (RRAM) switching material Ta2O5 and different metal electrode materials was examined using high-resolution X-ray photoelectron spectroscopy. Schottky hole barrier heights at the interface between were obtained, where electrodes consist with low to high work function (Φm,vac from 4.06 5.93 eV). Effective functions extracted study Fermi level pinning effect discuss dominant conduction mechanism. An accurate band is obtained can be used for RRAM...
In this study, high-performance indium-gallium-zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing O
A novel non-isolated high step-up dc-dc converter specifically designed for microgrids was introduced in this paper. The provides a wide range of voltage gains, having two different duty cycles, reduced stress, and the use modular structure. paper brief description topology proposed converter. It then proceeds to analyze detail operating principle stress experienced by device. Finally, waveform obtained Psim software proves theoretical analysis. So can be used as boost microgrids.
Four bisisoindigo (bis-IID) derivatives containing different numbers of electron withdrawing fluorine (F) or nitrogen (N) atoms and eight alternating copolymers them with 2,2′-bithophene (BT) 3,3′,4,4′-tetrafluoro-2,2′-bithiophene (4FBT) were synthesized. Depending on the F N incorporated, highest occupied molecular orbital (HOMO) lowest unoccupied (LUMO) energy levels polymers feasibly tuned in ranges −5.51 to −6.06 eV −3.64 −4.01 eV, respectively. Top gate bottom contact (TGBC) organic...
Significant improvements in the spatial and temporal uniformities of device switching parameters are successfully demonstrated <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">${\rm Ge}/{\rm TaO}_{x}$</tex></formula> bilayer-based resistive devices, as compared with non-Ge devices. In addition, reported devices also show significant reductions operation voltages. Influence Ge layer on -based random...
We present a novel selector made of doped-chalcogenide material. This not only achieves low holding voltage (0.2 V) and large on/off ratio (>10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">7</sup> ), but also exhibits the high on-current density (>1.6 MA/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) hysteresis window (1.2 V). Besides, excellent performances with ultra-low off-state leakage current (10 pA), switching speed (<10 ns),...
Two indacenodithiophene derivative bridged diketopyrrolopyrroles (DPP), i.e., 2,7-bis(2,5-bis(2-decyltetradecyl)-3,6-dioxo-4-(thiophen-2-yl)-2,3,5,6-tetrahydropyrrolo[3,4-c]pyrrol-1-yl)-s-indaceno[1,2-b:5,6-b′]dithiophene-4,9-dione (DDPP-PhCO) and 2,2′-(2,7-bis(2,5-bis(2-decyltetradecyl)-3,6-dioxo-4-(thiophen-2-yl)-2,3,5,6-tetrahydropyrrolo[3,4-c]pyrrol-1-yl)-s-indaceno[1,2-b:5,6-b′]dithiophene-4,9-diylidene)dimalononitrile (DDPP-PhCN), were developed via intramolecular Friedel–Crafts...
For the first time, random telegraph signal (RTS) and its corresponding flicker noise (1/f) were investigated in gate-all-around p-type Si-FinFETs. a device with gate width of ~ 100 nm (fin height) length 200 nm, typical RTS capture/emission time constants 0.1-1 ms. Very large amplitudes (DeltaI <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> /I xmlns:xlink="http://www.w3.org/1999/xlink">d </sub> up to 25%) observed, which is an effect...
Parasitic S/D resistances in extremely scaled GAA nanowire devices can pathologically limit the device drive current performance. We demonstrate for first time, that extension dopant profile engineering together with successful integration of low resistivity metallic contacts greatly reduces parasitic resistances. This allows 8 nm gate length this work to attain record-high currents 3740 muA/mum.
A polymer based on thienoquinoid showed unipolar n-type characteristics with an electron mobility of up to 0.45 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>.
A novel method for realizing arrays of vertically stacked (e.g., times3 wires stacked) laterally spread out nanowires is presented the first time using a fully Si-CMOS compatible process. The gate-all-around (GAA) MOSFET devices these nanowire show excellent performance in terms near ideal sub-threshold slope (<70 mV/dec), high I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> /I xmlns:xlink="http://www.w3.org/1999/xlink">off</sub>...
Resistive random-access memory (ReRAM) is a promising candidate for the next generation non-volatile technology due to its simple read/write operations and high storage density. However, crossbar array structure causes severe interference effect known as "sneak path." In this paper, we propose channel coding techniques that can mitigate both sneak-path noise. The main challenge data-dependent, also correlated within array, hence conventional error correction scheme will be inadequate. work,...