A low-power CMOS voltage reference was developed using a 0.35 mum standard process technology. The device consists of MOSFET circuits operated in the subthreshold region and uses no resistors. It generates two voltages having opposite temperature coefficients adds them to produce an output with near-zero coefficient. resulting is equal extrapolated threshold at absolute zero temperature, which about 745 mV for MOSFETs we used. coefficient 7 ppm/degC best 15 on average, range from - 20...

This paper presents bandgap reference (BGR) and sub-BGR circuits for nanowatt LSIs. The consist of a nano-ampere current circuit, bipolar transistor, proportional-to-absolute-temperature (PTAT) voltage generators. proposed avoid the use resistors contain only MOSFETs one transistor. Because circuit divides output transistor without resistors, it can operate at sub-1-V supply. experimental results obtained in 0.18-μm CMOS process demonstrated that BGR could generate 1.09 V 0.548 V. power...

This paper presents a level shifter circuit capable of handling extremely low-voltage inputs. The has distinctive current generation scheme using logic error correction that works by detecting the input and output levels. proposed can convert digital signals into high-voltage signals. achieves low-power operation because it dissipates operating only when signal changes. Measurement results demonstrated 0.23-V 3-V signal. power dissipation was 58 nW for 0.4-V 10-kHz pulse.

We have developed a nano-ampere CMOS current reference circuit that is tolerant to threshold voltage variations. This paper describes the and its temperature dependence control technique for ultra-low power LSIs. Because generated increases with temperature, we propose architecture by using different characteristics of "electron" "hole" mobilities. Experiment results demonstrated can generate compensated 9.95 nA output be controlled dependences electron hole The controllability was 8.57...

This paper proposes a fully-integrated high-conversion-ratio dual-output voltage boost converter (VBC) with maximum power point tracking (MPPT) circuits for low-voltage energy harvesting. The VBC consists of two generators that generate V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">OUT1</sub> and xmlns:xlink="http://www.w3.org/1999/xlink">OUT2</sub> . are three nine times higher than the harvester's output...

We have developed a 27- and 40-GHz tuned amplifier 52.5-GHz voltage-controlled oscillator using 0.18-mum CMOS. The line-reflect-line calibrations with microstrip-line structure, consisting of metal1 metal6, was quite effective to extract the accurate S-parameters for intrinsic transistor on an Si substrate realized precise design. Using this technique, we obtained 17-dB gain 14-dBm output power at 27 GHz amplifier. also 7-dB 10.4-dBm good input return loss 40 GHz. Additionally, oscillation...

CMOS technology is being advanced rapidly and applications are now expanding into the millimeter-wave regime on a global basis. 60 GHz wireless systems in have already been reported. In addition, 77 automotive radar becoming target for technology. This paper describes what believed to be first transceiver chip standard 90 nm CMOS.

A low-power CMOS current reference circuit was developed using a 0.35-μm standard process technology. The consists of MOSFET circuits operating in the subthreshold region and uses no resistors. It compensates for temperature effect on mobility μ threshold voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> MOSFETs generates that is insensitive to supply voltage. Theoretical analyses experimental results showed stable 100 nA....

This paper proposes CMOS bandgap reference (BGR) and sub-BGR circuits without resistors for nanowatt power LSIs. The BGR circuit consists of a nano-ampere current reference, bipolar transistor, proportional to absolute temperature (PTAT) voltage generator. PTAT generator source-coupled differential pairs generates positive dependent voltage. compensates negative dependence base-emitter in PNP transistor. silicon. uses divider generate low-voltage sub-bandgap reference. Experimental results...

We present a low-power and low-energy level shifter (LS) circuit that can convert extremely low-voltage input into high-voltage output. The proposed LS consists of preamplifier (pre-AMP) an output latch. pre-AMP employs logic error correction circuit, which generates operating current for the only when levels do not correspond. complementary amplified signals, latch converts them full-swing outputs. Measurement results demonstrated fabricated in 0.18-μm CMOS technology was able to 80 mV 1.8...

We developed a CMOS integrated-circuit sensor to monitor the change in quality of perishables that depends on surrounding temperatures. Our makes use fact temperature dependence subthreshold current MOSFETs is analogous degradation perishables. The attached perishable goods such as farm and marine products distributed from producers consumers along with goods. During their distribution process, measures temperatures emulates caused by temperature. By reading output sensor, can determine...

This paper proposes a new topology for broadband low-noise-amplifier (LNA). A common-gate (CG) amplifier with matching inductor composes unit cell, and the cells are cascaded to increase gain. As both input output impedances of cell matched 50 Ω wide frequency range, it is possible gain while maintaining bandwidth. Thus, high-gain performance can be obtained using this topology. The other features its small size, low power consumption, current reuse presents design methodology multistage CG...

This paper proposes an ultra-low power fully on-chip CMOS relaxation oscillator (ROSC) for a real-time clock application. The circuit has distinctive feature in compensation architecture of comparator's non-idealities caused by offset voltage and delay time. ROSC can generate stable higher oscillation frequency without increasing using low reference employing novel comparators. Measurement results 0.18-μm process demonstrated that the 32.55 kHz. dissipation was 472 nW. Measured line...

This paper describes a design method for flip-chip monolithic millimeter-wave integrated circuits (MMICs) with coplanar waveguide (CPW) transmission line W-band applications. We proposed test structure obtaining accurate CPW models. examined the characteristics of using in range and modeled them. Using models, we designed fabricated both two- three-stage amplifiers 0.15-/spl mu/m InGaP/InGaAs high electron-mobility transistor technology. The maximum power gain two-stage amplifier is 12 dB at...

In this paper, we propose a low-power level shifter (LS) capable of converting extremely low-input voltage into high-output voltage. The proposed LS consists pre-amplifier with logic error correction circuit and an output latch stage. generates complementary amplified signals, the stage converts them full-swing signals. Simulated results demonstrated that in 0.18-μm CMOS process can convert 0.19-V input 1.8-V correctly. energy delay time were 0.24 pJ 21.4 ns when low supply voltage, high...

The use of compressed sensing (CS) to achieve low-power consumptions in electroencephalogram (EEG) mea-surement devices has attracted considerable research interest. However, a signal processing issue utilizing CS is the trade- off between compression ratio (CR), reconstruction accuracy, and time. In this study, we developed method that resulted shortened time high accuracy with CR by selected EEG signals. When signals were sorted using mean frequency only most frequently occurring used...

We have developed a distributed amplifier for LiNbO/sub 3/ modulator driver using double-doped AlGaAs-InGaAs-AlGaAs pseudomorphic high electron mobility transistors (p-HEMTs). By stabilization and negative resistance control technique with source inductance grounded coplanar waveguided lines, we obtained gain of 15 dB, bandwidth 54 GHz, 6-V/sub PP/ output. These results indicate that our circuit is leading candidate use as in 40-Gb/s fiber-optic communication systems.

A CMOS current reference circuit has been developed in 0.35-μm process. The consists of a voltage circuit, noninverting amplifier, and an output MOS transistor. generates independent temperature process variations. Temperature- process-compensation were achieved by utilizing the zero coefficient bias point MOSFET. Theoretical analyses experimental results showed that quite stable 18.4 μA on average. coefficient, load sensitivity, sensitivity (σ/μ) 46-ppm/σC, 1.5%/V, 4.4%, respectively. can...

This paper proposes a fully integrated voltage boost converter (VBC) for low-voltage energy harvesting. The proposed VBC consists of three stage charge pumps (CPs) with low-leakage driver, ring oscillator, and 4-phase clock generator. output is four times higher than an input Fin. driver generates control signals to operate CPs low leakage current. amplitude the 2V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">IN</inf> does not depend on load...

We propose a sampling method that incorporates normally distributed series for EEG measurements using compressed sensing. confirmed the ADC count and amount of wirelessly transmitted data can be reduced by 11% while maintaining reconstruction accuracy similar to conventional method.