A5034814323- Solid-state spectroscopy and crystallography
- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Crystal Structures and Properties
- Optical and Acousto-Optic Technologies
- Nonlinear Optical Materials Research
- Phase-change materials and chalcogenides
- Semiconductor Quantum Structures and Devices
- Glass properties and applications
- Photonic Crystals and Applications
- Advanced Semiconductor Detectors and Materials
- Advanced Thermoelectric Materials and Devices
- Semiconductor materials and interfaces
- Plasmonic and Surface Plasmon Research
- Photorefractive and Nonlinear Optics
- Semiconductor Lasers and Optical Devices
- Photonic and Optical Devices
- Luminescence Properties of Advanced Materials
Technical University of Moldova
2014-2023
We report on fabrication of two-dimensional metallo-semiconductor networks by using pulsed electroplating Pt inside electrochemically-prepared porous GaP layers with parallel pores possessing diameters in the micrometer and sub-micrometer ranges. The electrochemical parameters were optimized for a uniform metal deposition inner surface template. A variable capacitance device fabricated Pt/GaP Schottky diodes forming at interface interpenetrating showed much higher density variation as...
Absorption (K), reflection (R) and wavelength modulated transmission (ΔT/Δλ) spectra in SnS2 crystals of hexagonal phase (space group P63/mmc) were investigated temperature interval from 300 to 10 K. It was established that indirect band gap ( - 2.403 eV) is due unpolarized transitions between Γ M points Brillouin zone. A minimal direct 2.623 E∣∣b polarization formed by allowed E⊥b (2.698 forbidden point magnitude refractive index (n) changes 3 4 has a maximum at 2.6 eV. Optical functions...
The resonance Raman scattering for geometries <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:mi>Y</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mi>Y</mml:mi><mml:mi>X</mml:mi><mml:mo stretchy="false">)</mml:mo><mml:mi>Z</mml:mi></mml:math> and id="M2"><mml:mi>Y</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mi>Z</mml:mi><mml:mi>X</mml:mi><mml:mo at temperature 10 K infrared reflection spectra in id="M3"><mml:mi>E</mml:mi><mml:mo...
Luminescence, transmission, reflection, and wavelength modulation transmission reflection spectra of HgGaInS4 crystals were researched in the temperature range 300-10 K. This article discusses various features observed crystals. The dependence on energy gap is shown. Spectra have minima a1, a2, a3, which vary with are caused by indirect transitions L-Г phonon absorption emission. thicker more same transitions. photoluminescence show a strong maximum at 2.43 eV, attributed to radiative...