A5101817936- ZnO doping and properties
- Ga2O3 and related materials
- Acoustic Wave Resonator Technologies
- GaN-based semiconductor devices and materials
- Advanced Photocatalysis Techniques
- Semiconductor materials and devices
- 2D Materials and Applications
- Ferroelectric and Piezoelectric Materials
- Graphene research and applications
- Physics of Superconductivity and Magnetism
- Metal and Thin Film Mechanics
- Quantum Dots Synthesis And Properties
- Electronic and Structural Properties of Oxides
- Perovskite Materials and Applications
- Advanced MEMS and NEMS Technologies
- Thin-Film Transistor Technologies
- Chalcogenide Semiconductor Thin Films
- Optical Coatings and Gratings
- Gas Sensing Nanomaterials and Sensors
- MXene and MAX Phase Materials
- Topological Materials and Phenomena
- Magnetic properties of thin films
- Transition Metal Oxide Nanomaterials
- Dielectric materials and actuators
- Mechanical and Optical Resonators
University of Electronic Science and Technology of China
2015-2024
National Engineering Research Center of Electromagnetic Radiation Control Materials
2015-2024
State Key Laboratory of Electronic Thin Films and Integrated Devices
2011-2017
Chengdu University
2014
Chinese Academy of Sciences
2014
Institute of Microelectronics
2003-2006
Dezhou University
2005
Recently, Ga2O3-based, solar-blind photodetectors (PDs) have been extensively studied for various commercial and military applications. However, to date, studies focused only on the crystalline phases, especially β-Ga2O3, quality must be carefully controlled because of its strong impact device characteristics. Based previous reports, amorphous-semiconductor-based PDs can also expected exhibit excellent photodetection In this work, amorphous gallium oxide thin films were deposited by radio...
Recently, monoclinic Ga 2 O 3 (β-Ga ) photodetectors (PDs) have been extensively studied for various commercial and military applications due to the merits of intrinsic solar rejection, high gain, great compactness.In this work, c-plane sapphire substrates were annealed under different temperatures in a vacuum furnace prior molecular beam epitaxy (MBE) β-Ga thin film, which yielded smoother surface even terraceand-step-like morphology on substrate, resulting improved crystallinity epitaxial...
Abstract An effective p–n heterojunction fabrication strategy of amorphous ZnGa 2 O 4 /NiO self‐powered ultraviolet (UV) photodetector is reported to consider both the low‐temperature and band alignment. Owing excellent photovoltaic effect, device exhibits an ultralow dark current 1.81 pA, a satisfactory response sensitivity 48.19 mA W −1 , specific detectivity 1.9 × 10 12 Jones, high rise/decay speed 41/22 ms under 255 nm light irradiation at 0 V bias. Compared with previously UV...
We report on the fabrication of a piezoelectric micromachined ultrasonic transducer (pMUT) and its application to photoacoustic imaging. With c-axis orientation, AlN was grown 300 nm-thick SiO2 film 200 bottom electrode at room temperature. The device consists SiO2, electrode, films, upper polyimide protective layer. An area ratio 0.45 used between vibration pMUT provide an optimal sensitivity transducer. Its resonant frequency measured be 2.885 MHz, coupling coefficient in range...
Two Surface acoustic wave (SAW) resonators were fabricated on langasite substrates with Euler angle of (0°, 138.5°, 117°) and 27°). A dipole antenna was bonded to the prepared SAW resonator form a wireless sensor. The characteristics sensors measured by frequency domain interrogation methods from 20 °C 600 °C. Different temperature behaviors observed. Strain sensing achieved using cantilever configuration. under applied strain 500 shift resonance contributed merely is extracted combined...
Abstract The unique structural and physical properties of two-dimensional (2D) atomic layer semiconductors render them promising candidates for electronic or optoelectronic devices. However, the lack efficient stable approaches to synthesize large-area thin films with excellent uniformity hinders their realistic applications. In this work, we reported a method involving deposition chemical vapor chamber produce few-layer 2H-MoSe 2 wafer-level uniformity. reduction MoO 3 was found...
The 0.7Pb(Mg1/3Nb2/3)O₃-0.3PbTiO₃(0.7PMN-0.3PT) nanorods were obtained via hydrothermal method with high yield (over 78%). Then, new piezoelectric nanocomposites based on (1-x)Pb(Mg1/3Nb2/3)O₃-xPbTiO₃ (PMN-PT) fabricated by dispersing the 0.7PMN-0.3PT into poly(vinylidene fluoride) (PVDF) polymer. mechanical behaviors of investigated. voltage and current generation PMN-PT/PVDF also measured. results showed that tensile strength, Young's modulus enhanced as compared to pure PVDF. largest 1.71...
We report in this paper on the study of surface acoustic wave (SAW) resonators based an AlN/titanium alloy (TC4) structure. The AlN/TC4 structure with different thicknesses AlN films was simulated, and propagating modes were discussed. Based simulation results, interdigital transducers a periodic length 24 μm patterned by lift-off photolithography techniques films/TC4 structure, while film thickness range 1.5–3.5 μm. device performances terms quality factor (Q-factor) electromechanical...
We report a dual-junction strategy for fabricating high-performance In2SexOy/In2Se3/Si heterojunction photodiode by oxidizing the epitaxial In2Se3 thin films. The device exhibits suppressed dark current (4.2 × 10−11 A) and enhanced photocurrent at zero bias, benefiting from double built-in electric fields. Consequently, it demonstrates excellent uniform self-powered broadband (255–1050 nm) photodetection performance with typical responsivity of several hundred mA/W, detectivity over 5 1011...
This paper aims to establish evidence for available phosphorous (AP) binding with total nitrogen (N) in subtropical forest soils. Soil organic carbon (SOC), N, (P) and AP concentration were measured three contrasting types southern China: Masson pine (MPF), coniferous broadleaved mixed (CBMF) monsoon evergreen (MEBF). A pot experiment N addition was conducted confirm the dominant factor affect on soil concentration. The results showed that mean 0–10 cm layer 440±50 MPF, 840±80 CBMF 1020±50...
High-performance enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) were realized by using fluorinated Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin films as gate dielectrics. The depth profile of Fluoride atoms determined X-ray photoelectron spectroscopy showed that the fluorine (F) ions incorporated into surface (approximately 2 nm) With...
An optical method was proposed, based on the ratio of color difference, to identify thickness graphene dielectric/Si substrates. The effect light source difference sheets has been investigated. result shows that for number layers N ≤ 10, between differences N- and single-layer remains almost unchanged under different sources. It suggests one can accurately by comparing experimental theoretical without knowing illuminant's parameters. is rapid, nondestructive, illuminant independent needs...
Imaging through scattering media is a classical inverse issue in computational imaging. In recent years, deep learning(DL) methods have excelled speckle reconstruction by extracting the correlation of patterns. However, high-performance DL-based also costs huge hardware computation and energy consumption. Here, we develop an opto-electronic DL method with low complexity for imaging media. We design "end-to-end" optronic structure reconstruction, namely fully convolutional neural network...
High temperature characteristics of langasite surface acoustic wave (SAW) devices coated with an AlN thin film have been investigated in this work. The films were deposited on the prepared SAW by mid-frequency magnetron sputtering. measured from room to 600 °C. results show that can work up coating layer protect and improve performance at high temperature. velocity increases increasing thickness. coefficients frequency (TCF) decrease thickness layers, while electromechanical coupling...