A5021173461- Semiconductor materials and devices
- Thin-Film Transistor Technologies
- Silicon Nanostructures and Photoluminescence
- Metal and Thin Film Mechanics
- Silicon and Solar Cell Technologies
- Diamond and Carbon-based Materials Research
- Copper Interconnects and Reliability
- Electronic and Structural Properties of Oxides
- GaN-based semiconductor devices and materials
- Nanomaterials and Printing Technologies
- Plasma Diagnostics and Applications
- Electron and X-Ray Spectroscopy Techniques
- Advancements in Photolithography Techniques
- Advanced ceramic materials synthesis
- 3D IC and TSV technologies
- Advanced Surface Polishing Techniques
- Electronic Packaging and Soldering Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Catalytic Processes in Materials Science
- Vibration and Dynamic Analysis
- Surface Roughness and Optical Measurements
- Transition Metal Oxide Nanomaterials
- Silicon Carbide Semiconductor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Semiconductor materials and interfaces
Institute for Rural Engineering
2025
Japan Aerospace Exploration Agency
2024
Kyushu Institute of Technology
2011-2023
National Agriculture and Food Research Organization
2020
Sumitomo Dainippon Pharma (United States)
1998-2012
Screen
1998-2012
Kobe University
2009-2010
Japan Advanced Institute of Science and Technology
1996-2005
Ulvac (Japan)
2003
Tokyo Institute of Technology
1988
This letter reports a procedure for low-temperature nitridation of silicon surfaces using species produced by NH3 catalytic decomposition on heated tungsten in chemical vapor deposition system. The surface Si(100) was nitrided at temperatures as low 200 °C. Silicon oxinitride films are obtained with stoichiometry Si:N:O=1:0.9:0.3, maximum thickness high 4.8 nm and an electrical breakdown field 6 MV/cm.
A novel method, called the catalytic chemical sputtering is proposed. In this hydrogen atoms generated by cracking reaction between a heated tungsten catalyzer and gas, react with solid silicon to draw out silicon-hydride species from it chemically, such are again decomposed or directly transported form films on substrates. Thus, prepared at low substrate temperatures without using silane disilane gases. By polycrystalline grain size larger than 1 µm obtained of approximately 400°C.
Atomic hydrogen generated by a heated catalyzer was used to clean Ru-capped extreme ultraviolet (EUV) multilayer mirrors, the surface of which oxidized EUV irradiation in an H2O ambience. An analysis change composition X-ray photoelectron spectroscopy (XPS) revealed that atomic deoxidized Ru oxide metal. The reflectivity mirror degraded EUV-induced oxidation almost restored, with only marginal centroid wavelength within measurement error. This indicates cleaning is promising method...
Switching operation in an intersectional-type field effect multiquantum-well optical switch was observed for the first time from light reflection caused by electric-field-induced refractive index variation and absorption coefficient change. The letter reports switching a GaInAsP/InP MQW ridge waveguide structure with intersection angle of 4°. Polarisation dependent properties originating quantum-well were also observed.
The deposition characteristics of carbon film on EUV mask surface, the impact lithography performance, and cleaning deposited are studied. density was found to be nearly half that graphite by X-ray reflectivity measurement. performance simulated SOLID-EUV. CD variation depends profile absorber pattern. Intentionally created contaminated masks were treated a process using atomic hydrogen. efficiency durability materials discussed.
Silicon nitride (SiNx) films on Si and poly(ethylene terephthalate) (PET) substrates were prepared at approximately 150°C by catalytic chemical vapor deposition (Cat-CVD), using a SiH4/NH3 gas mixture. A water transmission rate as low 0.2 g/m2day an O2 of 0.6 cm3/m2day achieved for stoichiometric Si3N4 film 77 nm thickness. Although these rates depended N/Si ratio, no optical absorption was observed under preferable conditions.
The feasibility of using ultrathin silicon nitride (SiNx) films, prepared by catalytic chemical vapor deposition (Cat-CVD) method, as an gate dielectric is reported. effects postdeposition treatments carried out hydrogen (H2)-decomposed species or NH3-decomposed formed cracking H2 and NH3 are also studied. A small hysteresis loop seen in the C–V curve as-deposited Cat-CVD SiNx films. leakage current case these films with equivalent oxide thickness (EOT) 3 nm slightly larger than that...