A5004583168- High-Energy Particle Collisions Research
- Quantum Chromodynamics and Particle Interactions
- Particle physics theoretical and experimental studies
- Nuclear physics research studies
- Statistical Mechanics and Entropy
- Nuclear reactor physics and engineering
- Nuclear Physics and Applications
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Complex Systems and Time Series Analysis
- Advanced Thermodynamics and Statistical Mechanics
- Atomic and Subatomic Physics Research
- Fractional Differential Equations Solutions
- stochastic dynamics and bifurcation
- Quantum, superfluid, helium dynamics
- Low-power high-performance VLSI design
- Parallel Computing and Optimization Techniques
- Astro and Planetary Science
- Pulsars and Gravitational Waves Research
- VLSI and Analog Circuit Testing
- Theoretical and Computational Physics
- Analog and Mixed-Signal Circuit Design
- Radioactive contamination and transfer
- Financial Risk and Volatility Modeling
- Radiation Detection and Scintillator Technologies
Chiba Keizai University
2024
Koriyama Women's University
2014-2023
RIKEN Nishina Center
2009-2022
Brookhaven National Laboratory
2001-2018
Banaras Hindu University
2003-2018
Jeonbuk National University
2010-2018
Charles University
2010-2018
Abilene Christian University
2003-2018
Augustana University
2014-2018
China Institute of Atomic Energy
2003-2014
We have measured the ${}^{8}\mathrm{Li}(\ensuremath{\alpha}{,n)}^{11}\mathrm{B}$ reaction directly and exclusively, determined total cross sections in center-of-mass energy of 1.5--7.0 MeV, by using a new-type gas counter, multiple-sampling tracking proportional chamber (MSTPC), neutron counters. This experiment was performed condition inverse kinematics. The ${}^{8}\mathrm{Li}$ beam produced RIKEN projectile-fragment separator, injected into MSTPC filled with ${}^{4}\mathrm{He}$ gas, which...
We studied the effects of nonextensivity on phase transition for system small volume $V$ in $\phi^4$ theory Tsallis nonextensive statistics entropic parameter $q$ and temperature $T$, when deviation from Boltzmann-Gibbs statistics, $|q-1|$, is small. calculated condensate mass to order $q-1$ with normalized $q$-expectation value under massless free particle approximation. The following facts were found. $\Phi$ divided by $v$, $\Phi/v$, at smaller than that $q'$ $q>q'$ as a function...
We studied chiral phase transitions in the Tsallis nonextensive statistics which has two parameters, temperature $T$ and entropic parameter $q$. The linear sigma model was used this study. critical temperature, condensate, masses, energy density were calculated under massless free particle approximation. decreases as $q$ increases. condensate at $q>1$ is smaller than that $q=1$. mass heavier $q=1$ high while lighter low temperature. pion increases remarkably dependence case of...
A 256K DYNAMIC MOS RAM, with a metal folded bit line structure, employing full Vcc store circuits for alpha immunity and redundancy bits fory ield enhancement, will be described. The device has been assembled in standard 300mil wide 16pin DIP. RAM 256 refresh cycles at 4ms intervals. As shown Figure 1, the memory cell array is divided into four blocks horizontal lines split by 512 sense amplifiers on either side of short polycide word running vertically. structure was found to superior...
The effects of the Tsallis distribution which has two parameters, [Formula: see text] and text], on physical quantities are studied using linear sigma model in chiral phase transitions. approaches Boltzmann–Gibbs as one. parameter dependences condensate mass for various shown, where is called temperature. critical temperature energy density described with digamma function, these extension Stefan–Boltzmann limit shown. following facts clarified. symmetry restoration at occurs low temperature,...
A novel one-transistor-type MOS RAM is discussed. This memory cell gives a remarkable area reduction and/or increase in storage capacitance by stacking the main portion of capacitor on address transistor, bit lines, or field oxides. It callled stacked-capacitor (STC) RAM. STC has three-level poly-Si structure. The stacked poly-Si-Si/sub 3/N/sub 4/-poly-Si (or Al) 16-kbit been fabricated with 3-/spl mu/m technology and operated successfully. Memory performance strikingly improved using cells.
We propose a novel phenomenological model of mean transverse momentum fluctuations based on the Geometrical Scaling hypothesis. Bose-Einstein correlations between two gluons generated from an identical color flux tube are taken into account as source fluctuation. calculate event-by-event fluctuation measure $\sqrt{C_m}/\langle p_{\rm T}\rangle$ and show that ALICE data observed at $\sqrt s=$0.90 TeV for $p$+$p$ collisions reproduced. By fitting our to experimental data, we evaluate size...
A novel one-transistor-type MOS RAM is discussed. This memory cell gives a remarkable area reduction and/or increase in storage capacitance by stacking the main portion of capacitor on address transistor, bit lines, or field oxides. It called stacked-capacitor (STC) RAM. STC has three-level poly-Si structure. The stacked poly-Si-Si <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> N xmlns:xlink="http://www.w3.org/1999/xlink">4</inf>...
Information is presented regarding a newly developed bottom package of on (PoP) structure referred to as dual face (DFP). Two types DFP have been developed; one DFP-PO (POst type), and the other DFP-PW (Post with Wire component type). 116 PoPs were experimentally produced using DFP-PO. The assembly yield was 100% there no failures in 500 thermocycle PoP test. There failure under testing single over 150 cycles. assembled post wire (PWC), by Kyushu Institute Technology cooperative enterprise....
We studied the effects of Tsallis distribution on transverse momentum fluctuation in high energy collisions. The parton–hadron duality and Bose–Einstein type correlation between partons were assumed. was calculated boost-invariant picture for expectation value used Boltzmann–Gibbs (BG) statistics nonextensive statistics. It shown that is a function [Formula: see text] which ratio inverse temperature to length. found following points: (1) depends form weakly definition statistics, (2)...
A 4-Mb word/spl times/1-b/1-Mb times/4-b CMOS DRAM characterized by a twisted driveline sense-amplifier (TDSA) scheme and multiphase drive circuit which enable faster access time smaller peak power supply current, respectively, is described. The implementation of an initialize mode with CAS-before-RAS (CBR) logic control, reduces the memory-chip initialization almost thousand times, also discussed. chip measures 6.38/spl times/17.38 mm/SUP 2/ has been fabricated using double-well technology...
The momentum distribution and particle correlation due to the mass difference were studied both in case of conventional expectation value $q$-expectation value, when is described by a Tsallis with entropic parameter $q \ge 1$. magnitude for hard modes increases as $q$ increases, $q$-dependence quite weak soft modes. at $q>1$ larger than that $q=1$ modes, while smaller these quantities weaker respectively.
We study the effects of friction on chiral symmetry restoration which may take place temporarily in high energy heavy ion collisions. The equations motion with are introduced to describe time evolution condensates within framework linear $\ensuremath{\sigma}$ model. Four types used how result is sensitive choice friction. For thermalization stage, dependent temperature parametrized so as simulate parton-cascade It according one-dimensional scaling hydrodynamics for subsequent cooling stage....
The influence of a crystal originated pit (COP) on the deep sub-micron dynamic-random-access-memory (DRAM), was clarified by investigation defective memory cells using 0.3 microns process test-element-group (TEG) which can operate as an actual DRAM. COP constrains growth field oxide film and leads to degradation isolation characteristics between adjacent cells.