A5056864724- Chalcogenide Semiconductor Thin Films
- Quantum Dots Synthesis And Properties
- Copper-based nanomaterials and applications
- Perovskite Materials and Applications
- Semiconductor materials and interfaces
- TiO2 Photocatalysis and Solar Cells
- Conducting polymers and applications
- 2D Materials and Applications
- Advanced Semiconductor Detectors and Materials
- Advanced Photocatalysis Techniques
- Silicon and Solar Cell Technologies
- Organ Transplantation Techniques and Outcomes
- Electrochemical Analysis and Applications
- MXene and MAX Phase Materials
- Phase-change materials and chalcogenides
- Advanced Sensor and Energy Harvesting Materials
- Transplantation: Methods and Outcomes
- Hormonal and reproductive studies
- Supercapacitor Materials and Fabrication
- Ubiquitin and proteasome pathways
- Polymer composites and self-healing
- Advanced Thermoelectric Materials and Devices
- Lipid metabolism and biosynthesis
- Global Maternal and Child Health
- Free Radicals and Antioxidants
Henan University
2012-2025
State Key Laboratory of Pollution Control and Resource Reuse
2025
Nanjing University
2025
University of Chinese Academy of Sciences
2024
Wuxi People's Hospital
2020-2024
Nanjing Medical University
2020-2024
Anhui Normal University
2021
Wuhan National Laboratory for Optoelectronics
2015-2020
Huazhong University of Science and Technology
2015-2020
Guangdong University of Technology
2015-2017
Organolead triiodide perovskite (CH3NH3PbI3) as a light-sensitive material has attracted extensive attention in optoelectronics. The reported photodetectors (PDs) mainly focus on the individual, which limits their spatial imaging applications. Uniform networks combining transparency and device performance were synthesized poly(ethylene terephthalate) (PET) by controlling crystallization. Photodetector arrays based above network fabricated to demonstrate potential for image mapping. trade-off...
The transitionmetal dichalcogenides‐based phototransistors have demonstrated high transport mobility but are limited to poor photoresponse, which greatly blocks their applications in optoelectronic fields. Here, light sensitive PbS colloidal quantum dots (QDs) combined with 2D WSe 2 develop hybrid QDs/2D‐WSe for performance and broadband photodetection utilized. device shows a responsivity up × 10 5 A W –1 , is orders of magnitude higher than the counterpart individual material‐based...
Abstract Antimony sulfide (Sb 2 S 3 ) as a wide‐bandgap, nontoxic, and stable photovoltaic material reveals great potential for the uppermost cells in Si‐based tandem cell stacks. Sb solar with compatible process, acceptable cost, high efficiency therefore become mandatory prerequisites to match silicon bottom cells. The performance of vacuum processed device is pinned by bulk interfacial recombination. Herein, thermally treated TiO buffer layer induces quasiepitaxial growth vertical...
Sb2S3 has attracted great research interest very recently as a promising absorber material for thin film photovoltaics because of their unique optical and electrical properties, binary compound easy synthesis. planar solar cells from evaporation method without hole-transport layer (HTM) assistance suffer sulfur deficit vacancy high back contact barrier. Herein, we developed postsurface selenization treatment to in order improve the device performance. The XRD, Raman, UV–vis spectra indicated...
Cu(In,Ga)Se2 (CIGS) is considered a promising photovoltaics material due to its excellent properties and high efficiency. However, the complicated deep defects (such as InCu or GaCu) in CIGS layer hamper development of polycrystalline solar cells. Numerous efforts have been employed passivate these which distributed grain boundary CIGS/CdS interface. In this work, we implemented an effective Ag substituting approach bulk absorber. The composition phase characterizations revealed that was...
Sb 2 (Se x S 1–x ) 3 has been proven a very promising light absorbing material for photovoltaic applications due to its high stability, tunable band gap, non‐toxic element, and extinction coefficient. For alloy film deposition, the authors develop single source based rapid‐thermal‐evaporation (RTE) method instead of traditional in‐situ sulfurization or double co‐evaporation RTE method. The absorber gap can be precisely tuned from 1.1 1.7 eV by simply varying molar ratio Se powder. From...
A generic Ag, Ge dual gradient substitution is proposed to minimize the bulk and interface recombination losses in kesterite solar cells.
Abstract Solution processing of Cu(In,Ga)Se 2 (CIGS) absorber makes it cost‐competitive in the photovoltaic market. It is reported that copper‐poor ordered vacancy compound (OVC) crucial for high performance CIGS solar cells. However, solution process method, controllable formation OVC unavailable and limited research has been carried out. In this work, phase on surface successful by controlling selenization temperature intentional variation Cu/(In+Ga) stoichiometry precursors top layers...
Abstract Antimony sulfide (Sb 2 S 3 ) is a promising photoelectric material because of its wide bandgap approximately 1.7 eV for next‐generation solar cells, high optical absorption coefficient, and green earth‐abundant constituents. Different to traditional cubic structure photovoltaic materials, Sb holds one‐dimensional crystal thin film with [hk1] preferred orientation shows one‐order‐higher carrier transport mobility. However, all the reported films exhibited [hk0] on CdS‐based...
Abstract Sb 2 (Se x S 1 − ) 3 alloy materials with tunable bandgaps combining the advantages of and Se showed high potential in low cost, non‐toxicity, stability solar cells. The composition dependence device performance becomes indispensable to study. However, traditional approaches often implement at a time, which easily lead long period systematic errors. present work developed high‐throughput experimental method, close‐space dual‐plane‐source evaporation (CDE) successfully deposit...
The one-dimensional photovoltaic absorber material Sb2S3 requires crystal orientation engineering to enable efficient carrier transport. In this work, we adopted the vapor transport deposition (VTD) method fabricate vertically aligned on a CdS buffer layer. Our work shows that such preferential vertical arises from sulfur deficit of surface, which creates beneficial bonding environment between exposed Cd2+ dangling bonds and S atoms in molecules. CdS/VTD-Sb2S3 interface recombination is...
Abstract Abundant intrinsic defects and defect clusters in Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells lead to severe nonradiative recombination limited photoelectric performance. Therefore, developing effective method suppress the detrimental is key achieve high‐efficiency cell. Herein, a convenient two‐step cooling strategy selenization process reported Zn Sn synergistically. The results show that rapid during section from temperature turning can inhibit volatilization of restrain corresponding...
Comparing with hot researches in absorber layer, window layer has attracted less attention PbS quantum dot solar cells (QD SCs). Actually, the plays a key role exciton separation, charge drifting, and so on. Herein, ZnO was systematically investigated for its roles QD SCs performance. The physical mechanism of improved performance also explored. It found that optimized films appropriate thickness doping concentration can balance optical electrical properties, energy band align well efficient...
Synergistic NaF–CsF PDT is conducted to solve the difficulty in obtaining available <italic>V</italic><sub>oc</sub> and FF for kesterite photovoltaics.
Abstract The recent emerging progress of quantum dot ink (QD-ink) has overcome the complexity multiple-step colloidal QD (CQD) film preparation and pronouncedly promoted device performance. However, detrimental hydroxyl (OH) ligands induced from synthesis procedure have not been completely removed. Here, a halide ligand additive strategy was devised to optimize QD-ink process. It simultaneously reduced sub-bandgap states converted them into iodide-passivated surface, which increase carrier...