A5013188408- Advanced MEMS and NEMS Technologies
- Copper Interconnects and Reliability
- Semiconductor materials and devices
- Photonic and Optical Devices
- Ion-surface interactions and analysis
- Semiconductor materials and interfaces
- Integrated Circuits and Semiconductor Failure Analysis
- Microwave Engineering and Waveguides
- Silicon and Solar Cell Technologies
- Metal and Thin Film Mechanics
- Semiconductor Lasers and Optical Devices
- Mechanical and Optical Resonators
- Acoustic Wave Resonator Technologies
- Advanced Sensor Technologies Research
- Radio Frequency Integrated Circuit Design
- Terahertz technology and applications
- Nanowire Synthesis and Applications
- Ultrasound Imaging and Elastography
- Ultrasonics and Acoustic Wave Propagation
- Intermetallics and Advanced Alloy Properties
- Superconducting and THz Device Technology
- Electronic Packaging and Soldering Technologies
- Flow Measurement and Analysis
- 3D IC and TSV technologies
- Surface Modification and Superhydrophobicity
VTT Technical Research Centre of Finland
2010-2023
Alimetrics (Finland)
2023
Statistics Finland
2023
Tieto (Finland)
2018
Layers manufactured by the ALD technique have many interesting applications in microelectromechanical systems (MEMS), for example as protective layers biocompatible coating, high-dielectric-constant layers, or low-temperature conformal insulating layers. Before an process can be successfully implemented MEMS processing, several practical issues to solved, starting from patterning and characterizing their behaviour various chemical thermal environments. Stress may not forgotten. We recently...
Three different contact schemes Al–Si, Al/Ti–Si, and Al/TiN/Ti–Si have been studied for their electrical characteristics thermal stability on shallow n+p-junctions. Contact resistance leakage current measurements indicate that the Al/Ti structure remains stable up to 450 °C Al/TiN/Ti 500 15 min, whereas Al–Si contacts degrade already at 400 °C. The of is limited by thin film reaction between Al Ti while failure attributed local defects such as pinholes in TiN barrier.
This article reports electrostatic transportation of water droplets on superhydrophobic alkylketene dimer (AKD) and Teflon AF/sup R/ surfaces. The actuation is based forces generated by metal electrodes placed underneath the surface. By switching electrode voltages, moved stepwise along paths. lowest voltage which resulted continuous movement was 124 VAC (rms) maximum speed over 1 cm/s shows great improvement with respect to previously reported in open air [M. Washizu, "Electrostatic...
An ultra-high sensitivity surface-micromachined capacitive differential pressure sensor and capacitance bridge readout circuit, with amplitude balancing for low-pressure gas measurement applications, was designed, fabricated, characterized. The membrane has a diameter of 800 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> thickness 1 the chip size is...
Beam-drift based flow measurement technique requires frequency matched ultrasound transmitters and receivers for determining the rate. Aluminum nitride (AlN) piezoelectric micromachined ultrasonic transducers (PMUTs) suitable such an application have been designed fabricated. The bottom electrode is in way that it reduces stray capacitances, without degrading properties of AlN layer deposited on it. Frequency matching within a PMUT array PMUTs fabricated across wafer are challenging due to...
Abstract We demonstrate a sub-terahertz (THz) and THz integration platform based on micromachined waveguides silicon. The demonstrated components in the frequency range 225–325 GHz include waveguides, filters, waveguide vias, low-loss transitions between monolithic integrated circuits. developed process relies microelectromechanical systems manufacturing methods silicon wafer substrates, promising scalable cost-efficient system method for future sub-THz communication sensing applications....
Abstract Nanocrystalline materials exhibit properties that can differ substantially from those of their single crystal counterparts. As such, they provide ways to enhance and optimize functionality for devices applications. Here, we report on the optical, mechanical thermal nanocrystalline silicon probed by means optomechanical nanobeams extract information dynamics optical absorption, losses, heat generation dissipation. The are fabricated using films prepared annealing amorphous layers at...
We describe an integrated radiometer at 240 GHz consisting of a direct detection MMIC fabricated in BiCMOS SiGe and silicon gradient refractive index (GRIN) lens. The planar GRIN lens enables placing the with on-chip dipole antenna directly on focal point describe, how this method integration can be extended to larger detector arrays while presenting results single pixel article. includes antenna, low-noise amplifier (LNA), diode detector. bandwidth (BW) is 38 GHz, defined by monolithic...
The cMUTs presented in this study are based on a new surface micromachining process, where part of the top electrode cMUT is fabricated porous polysilicon. This method gives many advantages over previously reported fabrication processes.
This paper describes a study of impact different passivation methods on performance gradient refractive index (GRIN) lenses. Three layers top lenses are studied: PolySi, PolySi and PECVD silicon oxide (PolySi+SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ), (SiO ). Antenna gains radiation patterns fabricated measured. The shows that have strong GRIN performance. A model with low-resistivity layer high-resistivity Si can explain...
We propose a radiometer receiver array based on silicon microlens and MMIC detectors at 200 - 250 GHz. The paper describes the concept details development. Planar Gradient Refractive Index (GRIN) lenses have been chosen for array. Fabrication process DRIE etching of has developed, designed. first measurement results lens are presented.
We demonstrate first results towards sub-THz integration system based on micromachined waveguides Silicon. The demonstrated components at 270 GHz include waveguides, filters and vias, as well a loss-low transition between the waveguide MMIC. developed process relies known MEMS manufacturing methods Silicon wafer substrates, promising scalable cost efficient method for future communication sensing applications.
We report a capacitive pressure sensor to be integrated in FFR catheter. The novelty presented this work is based on two innovations: (1) VTT surface micromachined process used fabrication of ultrathin and narrow element (2) mounting the catheter sidewall instead guide wire enabling thus use standard wires. Two design runs were accomplished. measurement results MEMS correlate well with calculated simulated results.