A5044706120- 2D Materials and Applications
- Graphene research and applications
- Perovskite Materials and Applications
- MXene and MAX Phase Materials
- Magnetic properties of thin films
- Advanced Photocatalysis Techniques
- Advancements in Battery Materials
- Magnetic Properties and Applications
- Theoretical and Computational Physics
- Nanowire Synthesis and Applications
Sejong University
2017-2021
Government of the Republic of Korea
2021
Beijing Graphene Institute
2017
Van der Waals heterostructures composed of transition-metal dichalcogenide (TMD) materials have become a remarkable compact system that could offer an innovative architecture for advanced engineering in high-performance energy-harvesting and optoelectronic devices. Here, we report novel van (vdW) TMD heterojunction photodiode black phosphorus (p-BP) palladium diselenide (n-PdSe2), which establish high tunable rectification photoresponsivity. A up to ≈7.1 × 105 is achieved, successfully tuned...
This paper reports on high photo responsivity (<italic>R</italic><sub>λ</sub> ∼ 1913 AW<sup>−1</sup>) of MoS<sub>2</sub> photodetector by decorating a thin layer ZnO quantum dots MoS<sub>2</sub>.
We present a van der Waals p-MoTe<sub>2</sub>/n-MoTe<sub>2</sub>homojunction p–n diode with low resistance metal contacts.
Abstract 2D layered germanium selenide (GeSe) with p -type conductivity is incorporated asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold (Pd/Au) to design a self-biased, high speed an efficient photodetector. The photoresponse under photovoltaic effect investigated for the wavelengths light (i.e. ~220, ~530 ~850 nm). device exhibited promising figures merit required photodetection, specifically Schottky barrier diode highly sensitive NIR irradiation at zero voltage...
A few-layer WSe<sub>2</sub>/WS<sub>2</sub> heterojunction diode on an h-BN substrate shows improved electronic and optoelectronic characteristics with a robust rectification ratio photo responsivity compared to that SiO<sub>2</sub> substrate.
Abstract One of the most prominent and effective applications graphene in field spintronics is its use as a spacer layer between ferromagnetic metals vertical spin valve devices, which are widely used magnetic sensors. The magnetoresistance such devices can be enhanced by selection suitable materials proper fabrication procedures. Here, we report dry-transferred single- double-layer graphene, grown chemical vapor deposition (CVD), procedure no photo-resist or electron-beam resists used....