A5007298948- Graphene research and applications
- 2D Materials and Applications
- Perovskite Materials and Applications
- Advanced Memory and Neural Computing
- Gas Sensing Nanomaterials and Sensors
- Magnetic Properties and Synthesis of Ferrites
- Electronic and Structural Properties of Oxides
- Topological Materials and Phenomena
- Advanced Photocatalysis Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Transition Metal Oxide Nanomaterials
- Quantum and electron transport phenomena
- Advanced Nanomaterials in Catalysis
- Semiconductor materials and devices
- Electrochemical sensors and biosensors
- Ferroelectric and Negative Capacitance Devices
- MXene and MAX Phase Materials
- Iron oxide chemistry and applications
- Integrated Circuits and Semiconductor Failure Analysis
- Analytical Chemistry and Sensors
- Nanowire Synthesis and Applications
- Photoreceptor and optogenetics research
- Graphene and Nanomaterials Applications
- Multiferroics and related materials
- Electromagnetic wave absorption materials
Friedrich Schiller University Jena
2024
Sejong University
2020-2024
University of Chemistry and Technology, Prague
2022-2024
University of Okara
2017-2024
Helmholtz Institute Jena
2024
International Islamic University, Islamabad
2024
University of Engineering and Technology Peshawar
2023
McGill University
2021
Bridge University
2021
Pakistan Institute of Nuclear Science and Technology
2015-2021
Abstract Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior self-powered photovoltaic characteristics novel p-GeSe/n-MoSe 2 van der waal heterojunction (vdW HJ). A substantial increase in rectification was observed when the devices were subjected to gate bias. The highest ~ 1 × 10 4 obtained at V g = − 40 V. Remarkable p-n...
Abstract Additive manufacturing (AM) technology has gained significant popularity, among which Fused Deposition Modeling (FDM) emerged as the predominant technique for 3D printing. FDM offers unique ability to achieve desired and tailored engineering properties required specific applications. This experimental study investigates influence of varying process parameters on mechanical highlights optimal set better tensile strength a bi-layered composite PLA-ABS (polylactic acid acrylonitrile...
We present a comprehensive study of the structural and electronic properties ultrathin films containing graphene layers synthesized by chemical vapor deposition based surface segregation on polycrystalline Ni foils then transferred onto insulating SiO2/Si substrates. Films size up to several mm’s have been synthesized. Structural characterizations atomic force microscopy, scanning tunneling cross-sectional transmission electron microscopy (XTEM), Raman spectroscopy confirm that such...
Abstract 2D layered germanium selenide (GeSe) with p -type conductivity is incorporated asymmetric contact electrode of chromium/Gold (Cr/Au) and Palladium/Gold (Pd/Au) to design a self-biased, high speed an efficient photodetector. The photoresponse under photovoltaic effect investigated for the wavelengths light (i.e. ~220, ~530 ~850 nm). device exhibited promising figures merit required photodetection, specifically Schottky barrier diode highly sensitive NIR irradiation at zero voltage...
Abstract The p–n heterojunction fabricated by the vertical stacking of 2D materials is highly relevant to modern electronics and optoelectronic devices. This research reports a novel p‐GeSe/n‐WS 2 heterostructured diode exhibiting prominent thickness‐dependent gate‐tunable rectification behavior. ratio increases as thickness WS increased. A 10 4 achieved successfully sweeping back‐gate voltage. modulation in behavior ascribed interlayer electron‐hole recombination. Density functional theory...
Abstract Visible near infrared (VNIR) transition‐metal dichalcogenides (TMDs) photodetectors have attracted attention due to their unique electronic and optoelectronic properties. Herein, the photodetection performance of a novel MoTe 2 /ReSe van der Waals heterojunction (vdW HJ) diode is studied in VNIR region. Density functional theory calculations reveal formation type‐II band alignment, which beneficial for design HJ with better A superb rectification ratio ≈1 × 10 4 obtained via gate...
Here, novel lateral PtSe<sub>2</sub> p–n junctions are fabricated based on the PtSe<sub>2</sub>/BN/graphene (Gr) van der Waals heterostructures upon illumination of visible light <italic>via</italic> optical excitation mid-gap point defects in hexagonal boron nitride (h-BN).
Abstract The researchers are applying different methods to increase the performance of nanocomposites. There some techniques that will used properties epoxy resins for example attachment functional groups carbon nanotubes, better dispersal disperse nanofillers into polymer matrices and so on. In this research, we made a comparative study on with weight ratio MWCNTs. Based observation experiment, developing an experimental relation between changes in types properties. For purpose, combination...
Transparent semiconductor oxides with two-dimensional (2D) heterostructures have been extensively studied as new materials for thin-film transistors and photosensors due to their remarkable photovoltaic characteristics, making them useful newly developed optoelectronics. Here we demonstrate the fabrication characterization of an ITO/n-IGZO/p-GeSe transparent selective wavelength photodetector. The wavelength-dependent behavior n-IGZO/p-GeSe heterostructure under UV-Visible laser light shifts...
Abstract The fabrication of van der Waals heterostructures (vdWHs) has drawn considerable interest because their wide range functionalities. Herein, a novel PdSe 2 /ReSe vdWHs with gate‐tunable rectification behavior and excellent broadband photodetection characteristics is presented. application the gate bias substantially enhances behavior, highest ratio (≈3.13 × 10 3 ) observed at voltage V g = −60 V. density functional theory calculations demonstrate direct indirect bandgap ReSe in...
A 3-terminal device with a tunable Schottky barrier controls the charge transport across vertically stacked structure named “barristor”- one composed of graphene/rhenium diselenide (ReSe 2 ) p-n heterojunction to exploit advantages high mobility graphene ReSe for digital applications is reported herein. The CVD-graphene used fabricate p-type doped by DUV irradiation in O atmosphere 30 min. Density functional theory (DFT) calculations reveals highly anisotropic behavior , possessing bandgap...
Abstract Silver sulfide (Ag 2 S) nanomaterials are important chalcogenides and have potential applications in photovoltaic cells, thermoelectric sensors, solar cell batteries, infrared detectors. However, the biological properties of green synthesized silver nanoparticles S-NPs) been rarely explored as compared to extensively studied (AgNPs). The current study thus investigates compares Fagonia arabica Ag S-NPs AgNPs for multiple properties. Biosynthesis NPs is achieved using an aqueous...