A5018031390- 2D Materials and Applications
- MXene and MAX Phase Materials
- Chalcogenide Semiconductor Thin Films
- Quantum and electron transport phenomena
- Advancements in Battery Materials
- Advanced Memory and Neural Computing
- Ferroelectric and Piezoelectric Materials
- Semiconductor Quantum Structures and Devices
- Physics of Superconductivity and Magnetism
- Perovskite Materials and Applications
- Advanced Battery Materials and Technologies
- Phase-change materials and chalcogenides
- Supercapacitor Materials and Fabrication
- Transition Metal Oxide Nanomaterials
- Multiferroics and related materials
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Acoustic Wave Resonator Technologies
- ZnO doping and properties
- GaN-based semiconductor devices and materials
- Graphene research and applications
- Ga2O3 and related materials
- Nonlinear Optical Materials Studies
- Topological Materials and Phenomena
- Rice Cultivation and Yield Improvement
East China Normal University
2011-2025
China Geological Survey
2025
Yangtze University
2022-2024
Liaoning Shihua University
2024
Tongji University
2021-2023
Zibo Vocational Institute
2023
Korean Council for University Education
2023
Optica
2018
Chinese Academy of Sciences
2007-2016
Shanghai Institute of Technical Physics
2006-2016
The processing of visual information occurs mainly in the retina, and retinal preprocessing function greatly improves transmission quality efficiency information. artificial retina system provides a promising path to efficient image processing. Here, graphene/InSe/h-BN heterogeneous structure is proposed, which exhibits negative positive photoconductance (NPC PPC) effects by altering strength single wavelength laser. Moreover, modified theoretical model presented based on power-dependent...
Abstract 2D layers of metal dichalcogenides are considerable interest for high‐performance electronic devices their unique properties and atomically thin geometry. SnS 2 nanosheets with a bandgap ≈2.6 eV have been attracting intensive attention as one potential candidate modern electrocatalysis, electronic, and/or optoelectronic fields. However, the controllable growth large‐size high‐quality atomic still remains challenge. Herein, salt‐assisted chemical vapor deposition method is provided...
Enhanced carrier separation in ferroelectric In<sub>2</sub>Se<sub>3</sub>/MoS<sub>2</sub> van der Waals heterostructure and external electric field effects.
Ultrabroadband photodetection is of great significance in numerous cutting-edge technologies including imaging, communications, and medicine. However, since photon detectors are selective wavelength thermal slow response, developing high performance ultrabroadband photodetectors extremely difficult. Herein, one demonstrates an photoelectric detector covering visible, infrared, terahertz, millimeter wave simultaneously based on single metal-Te-metal structure. Through the two kinds effect...
A GaSe/GeS heterobilayer with a type-II band alignment and electric field modulated data storage.
Abstract Many van der Waals layered 2D materials, such as h ‐BN, transition metal dichalcogenides (TMDs), and group‐III monochalcogenides, have been predicted to possess piezoelectric mechanically flexible natures, which greatly motivates potential applications in piezotronic devices nanogenerators. However, only intrinsic in‐plane piezoelectricity exists these materials the effect is confined odd‐layers of TMDs. The present work intent on combining free‐standing design piezoresponse force...
The practical application of Lithium–Sulfur batteries largely depends on highly efficient utilization and conversion sulfur under the realistic condition high‐sulfur content low electrolyte/sulfur ratio. Rational design heterostructure electrocatalysts with abundant active sites strong interfacial electronic interactions is a promising but still challenging strategy for preventing shuttling polysulfides in lithium–sulfur batteries. Herein, ultrathin nonlayered NiO/Ni 3 S 2 nanosheets are...
The ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\overline {{2}} {01}$ </tex-math></inline-formula> )-oriented Mg-doped notation="LaTeX">$\boldsymbol {\beta }$ - notation="LaTeX">${\text {Ga}}_{2}{\text {O}}_{3- \delta films were grown on (0001)-sapphire substrates by pulsed laser deposition (PLD) at various oxygen partial pressures notation="LaTeX">$\text{P}_{\text {O}}\,\,=10$ -40mTorr)....
Anomalous negative phototransistors have emerged as a distinct research area, characterized by decrease in channel current under light illumination. Recently, their potential applications been expanded beyond photodetection. Despite the considerable attention given to phototransistors, photoconductance (NPC) particular remains relatively unexplored, with limited advancements compared well-established positive phototransistors. In this study, we designed ferroelectric field-effect transistors...
A unique 3D porous CNT/graphene–MnO architecture has been synthesized, with MnO nanoparticles homogeneously decorated on interconnected CNT/graphene (3DCG) conductive networks.
The poor cycle stability and reversibility seriously hinder the widespread application of SnO2 materials as anodes for lithium-ion batteries (LIBs). A novel sandwich-architecture composite Si-doped nanorods reduced graphene oxide with carbon sealing (Si-SnO2@G@C) is engineered fabricated by a facile two-step hydrothermal process subsequent annealing treatment, which exhibit not only extraordinary rate performance ultrahigh reversible capacity but also excellent high electrical conductivity...
Van der Waals (vdW) heterostructures, integrated two-dimensional (2D) materials with various functional materials, provide a distinctive platform for next-generation optoelectronics unique flexibility and high performance. However, exploring the vdW heterostructures combined strongly correlated electronic is hitherto rare. Herein, novel temperature-sensitive photodetector based on GaSe/VO2 mixed-dimensional heterostructure discovered. Compared previous devices, our exhibits excellent...
The simulation of human brain neurons by synaptic devices could be an effective strategy to break through the notorious "von Neumann Bottleneck" and "Memory Wall". Herein, opto-electronic synapses based on layered hafnium disulfide (HfS2) transistors have been investigated. basic functions biological are realized optimized modifying pulsed light conditions. Furthermore, 2 × pixel imaging chips also developed. Two-pixel visual information is illuminated diagonal pixels array applying pulses...
We demonstrate flexo-photoelectronic effects of both n-type and p-type 2D semiconductors.
Single-atom Pt-based catalysts display a promising strategy to enhance the atomic utilization of noble metals while attaining desirable electrocatalytic properties. Moreover, rationally selecting substrate helps optimize water dissociation energy as well promote H* conversion. Herein, we dispersed monoatomic Pt with ultralow content onto porous nickel nanosheets accelerate reaction kinetics hydrogen evolution in an alkaline medium. Density functional theory calculations reveal that...
Tellurium (Te) recently attracts much attention owing to its peculiar band structure arousing high‐efficiency thermoelectricity and layered crystal suitable for engineering. Herein, the temperature evolution of lattice vibration in Te single are studied by mid‐and‐far infrared transmission (7500–370 680–30 cm −1 ) Raman spectra measurements. Mid‐infrared absorption confirm is a narrow indirect gap semiconductor, which direct (indirect) bandgap about 0.333 (0.325) eV, two upper valence bands...
Flexoelectricity originates from the electromechanical coupling interaction between strain gradient and polarization, broadly applied in developing energy devices. However, study of quantifying longitudinal flexoelectric coefficient (μ11) which is important for application atomic-scale two-dimensional (2D) materials still a slow-moving stage, owing to technical challenges. Based on free-standing suspension structure, this paper proposes widely applicable method mensurable formula determining...
Abstract Controlling polarization states of ferroelectrics can enrich optoelectronic properties and functions, offering a new avenue for designing advanced electronic devices. Here, ferroelectric semiconductor‐based field‐effect transistors (FeSFETs) are fabricated, where the channel is semiconductor (e.g., α‐In 2 Se 3 ). Multiple conductance achieved in ‐based FeSFETs by controlling polarization. The on/off current ratio (I on /I off ) ≈10 5 with dark −11 A applying single positive gate...
Vanadium dioxide (VO2) with a metal–insulator transition (MIT) has been supposed as candidate for optoelectronic devices. However, the MIT temperature (TMIT) above room limits its application scope. Here, high-quality V1–xWxO2 films have prepared by pulsed laser deposition. On basis of temperature-dependent transmittance and Raman spectra, it was found that TMIT increases from 241 to 279 K, when increasing doping concentration in range 0.16 ≤ x 0.20. The interband electronic transitions...