A5027511167- ZnO doping and properties
- Quantum Dots Synthesis And Properties
- Acoustic Wave Resonator Technologies
- Chalcogenide Semiconductor Thin Films
- Ga2O3 and related materials
- Gas Sensing Nanomaterials and Sensors
- GaN-based semiconductor devices and materials
- Advanced Sensor and Energy Harvesting Materials
- Perovskite Materials and Applications
- Ferroelectric and Piezoelectric Materials
- Microstructure and Mechanical Properties of Steels
- Laser-induced spectroscopy and plasma
- Photodynamic Therapy Research Studies
- Terahertz technology and applications
- Silicone and Siloxane Chemistry
- Laser Material Processing Techniques
- Glass properties and applications
- Biosensors and Analytical Detection
- Advanced biosensing and bioanalysis techniques
- Advanced X-ray Imaging Techniques
- Non-Invasive Vital Sign Monitoring
- Advanced Battery Materials and Technologies
- Ion-surface interactions and analysis
- Advanced MEMS and NEMS Technologies
- Spectroscopy and Laser Applications
National Institute of Advanced Industrial Science and Technology
2003-2023
Osaka University
1998-2018
Kyushu University
2017
University of Fukui
2013
Ibaraki University
2009
Shikoku Research Institute
1999-2005
Industrial Research Institute
1997-1998
Tohoku Medical and Pharmaceutical University
1982-1990
The present study examined the potential of quantum dot bioconjugates to sensitize cells UV irradiation and promote photodynamic activity classical photosensitizers such as trifluoperazine (TFPZ) sulfonated aluminum phthalocyanine (SALPC). Water-soluble CdSe nanocrystals were conjugated with anti-CD antibody known specificity leukemia cells. Quantum conjugates incubated cell line Jurkat ensure specific interaction surface. This was confirmed by fluorescent confocal microscopy. Furthermore,...
The authors have investigated the influence of scandium concentration on power generation figure merit (FOM) aluminum nitride (ScxAl1−xN) films prepared by cosputtering. FOM strongly depends concentration. Sc0.41Al0.59N film was 67 GPa, indicating that is five times larger than AlN. higher those lead zirconate titanate and Pb(Mg1/3Nb2/3)O3-PbTiO3 films, which highest reported for any piezoelectric thin films. high due to d31 low relative permittivity.
ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTMolecular models of the superconducting chevrel phases: syntheses and structures [Mo6X8(PEt3)6] [PPN][Mo6X8(PEt3)6] (X = S, Se; PPN (Ph3P)2N)Taro Saito, Naohiro Yamamoto, Toshimi Nagase, Toshio Tsuboi, Kazuyo Kobayashi, Tsuneaki Yamagata, Hideo Imoto, Kei UnouraCite this: Inorg. Chem. 1990, 29, 4, 764–770Publication Date (Print):February 1, 1990Publication History Published online1 May 2002Published inissue 1 February...
Aluminum nitride (AlN) is one of piezoelectric materials, which are eagerly anticipated for use in microelectromechanical systems (MEMS) applications such as communication resonators, sensors, and energy harvesters. AlN particularly excellent generated voltage characteristics the MEMS rather than oxide materials lead zirconium titanate Pb(Zr, Ti)O3. However, it necessary to improve properties order advance performance MEMS. We dramatically increased coefficient d33 films by simultaneously...
The present study describes a synthesis of QD-lectin conjugates and their application for identification leukaemia cells from normal lymphocytes using fluorescent confocal microscopy flow cytometry. results are compared with commercially available FITC-lectin.
Photoluminescence (PL) intermittency characteristics are examined for single quantum dots (QDs) in a CdSe QD sample synthesized at slow rate 75 °C. Although the PL efficiency was relatively low (∼0.25), we noticed that intensity of QDs fluctuated on subsecond time scale with short-lived "on" and "off" states. The fluctuations different from blinking generally observed fluctuating millisecond to minute scale. We characterized by identifying polarized excitations, topographic imaging using...
The present study describes an enhancement of the photoluminescence CdSe quantum dots under long-term ultraviolet irradiation in organic solvents. photoenhancement effect followed multiexponential kinetics and was found to depend on several factors: intensity light, polarity solvent, presence capping agents nanocrystal surface, free Cd Se ions solution. High provoked a rapid nanocrystals, reaching maximum with subsequent decay. Low-intensity comparatively slow saturation after 5-6 hours...
A green photoluminescent (PL) undoped zinc oxide film was successfully prepared by a novel method involving KrF excimer laser irradiation of sol-gel-derived precursor. This requires the appropriate energy fluence ( E f ) 100 mJ/cm 2 laser, and has advantage practical production at low substrate temperature 473 K in air. Transmission electron microscopy (TEM) X-ray diffraction (XRD) observations showed that PL close-packed columnar crystals an upper layer, where centers oxygen vacancies are...
Magnetron sputtering generally increases the temperature of substrate placed to face target above 40 °C because plasmas are transported through unbalanced magnetic field lines from surface. However, by using a mirror-type magnetron cathode, we were able suppress environmental less than at target–substrate distance ≥50 mm with DC input power ≤30 W and an Ar gas pressure ≤0.15 Pa. This was possible balanced confined near target. By enabling film deposition on low heat-resistant substrates,...
A small portion of a reaction mixture including unpurified CdX (X = Se or Te) quantum dots (QDs), in which unreacted Cd and ions were left together with coordinating solvents, was dropped into an organic solvent. The QDs this solution showed enhancement photoluminescence (PL) efficiency, growth particles, focusing size distribution for more than 10 h at room temperature (RT, ∼23 °C). These effects attributed to passivation QDs' surface by X present the solution. No external energy source...
Morphology, structure and photoluminescence (PL) properties of zinc oxide (ZnO) films prepared by KrF-excimer-laser irradiation sol–gel-derived precursors were studied. The with a film thickness 100 or 180 nm irradiated the laser at various energy fluences ( Ef ). Atomic force microscopy transmission electron observations revealed that an ≥100 mJ/cm 2 produced crystal growth close-packed ZnO crystals in upper layer. Laser high (150 ) thinner precursor remarkable crystallization throughout...
Green cathodoluminescent (CL) zinc oxide (ZnO) films were successfully prepared at a low substrate temperature (473 K) in air by KrF-excimer laser irradiation of sol–gel-derived precursor (ELISG method). Structures and CL properties the irradiated different energy fluences (Ef) studied compared with those film conventional heat treatment reducing atmosphere. The ZnO showed green band peaking around 510 nm, addition to an ultraviolet band. maximum intensity was obtained from produced Ef 130...
Heat-resistant, low-cost, and large-area flexible piezoelectric sheet sensors that detect the postures of drivers are required for practical driver monitoring systems vehicles. However, typically used polymer-based materials have low heat resistance. Here, we present a simple heat-resistant sensor based on solution-processed zinc oxide films discuss its sensing performance. Piezoelectric lithium-doped (Zn1–xLixO) directly prepared polyimide substrates by facile solution process, producing...
We report a correlation between polarity distribution and piezoelectric response of Li-doped zinc oxide (Zn1-xLixO) films prepared by facile chemical solution deposition (CSD) method. The supports the importance controlling for obtaining high ZnO films. Although Zn1-xLixO were easily on Inconel substrates heating randomly-stacked nanoparticle films, Zn0.97Li0.03O Zn0.94Li0.06O showed 5.6–5.8 pC/N O-polarity ratio 76–74%. This study presents CSD method is promising as low-cost large-area fabrication
We propose and demonstrate electro-optic (EO) sampling of terahertz (THz) radiation by using GaAs in the Cherenkov phase-matching scheme. This technique can be implemented without Si-prism coupling due to a small difference between optical group THz phase refractive indices its low absorption.
The present paper describes a study on the crystallization of sol-gel derived precursor ZnO film during and after irradiation an excimer laser. temporal change structure films was discussed based time-resolved signal reflected transmitted laser beam irradiation. surface morphology analyzed by atomic force microscope (AFM). pulse-to-pulse changes integrated signals conditions film. In measurement, significant both were observed first pulse.
Alumina-based composite containing 1vol%NiAl has been fabricated to study the toughening mechanism due oxidation-derived metamorphic layer on surface. The development of network structure substituting boundary matrix-Al2O3 with oxidation product NiAl2O4 induces enhanced crack deflection improve fracture toughness and strength from 3.6MPa･m1/2 539MPa (as-sintered) 6.4 MPa･m1/2 701MPa at time 5h. However, excess causes diffusion surface products into bulk. disappearance results in decrease strength.