A5114860033- Physics of Superconductivity and Magnetism
- GaN-based semiconductor devices and materials
- Quantum and electron transport phenomena
- Ga2O3 and related materials
- Semiconductor materials and devices
- Quantum, superfluid, helium dynamics
- ZnO doping and properties
- Silicon Carbide Semiconductor Technologies
- Laser-Ablation Synthesis of Nanoparticles
- MXene and MAX Phase Materials
- Magnetic Field Sensors Techniques
- Gas Sensing Nanomaterials and Sensors
- Theoretical and Computational Physics
- Advanced Photocatalysis Techniques
- Catalytic Processes in Materials Science
- Quantum many-body systems
- Iron-based superconductors research
- Cold Atom Physics and Bose-Einstein Condensates
- Magnetic and transport properties of perovskites and related materials
- Electrocatalysts for Energy Conversion
- Superconducting Materials and Applications
Chinese Academy of Sciences
2018-2025
Institute of Solid State Physics
2018-2025
Institute of Physics
2022-2024
University of Chinese Academy of Sciences
2022-2024
North China University of Technology
2021
Institute of Microelectronics
2020-2021
Hefei Institutes of Physical Science
2018
Gallium nitride (GaN) has been considered one of the most promising materials for next-generation power and radio-frequency electronic devices, as they can operate at higher voltage, frequency, temperature, compared with their silicon (Si) counterparts. However, fresh GaN surface is susceptible to natural oxidation composed Ga2O3, Ga2O, other intermediate states. Moreover, oxidized no longer features distinct atomic step-terrace morphology, resulting in a degraded interface when gate or...
Thermodynamic immiscibility is a challenge for intermetallic alloying of sub-5 nm Ru-based alloys, which are excellent electrochemical catalysts water splitting. In this study, nanosecond laser ultrafast confined (LUCA) proposed to break the immiscible-to-miscible transition limit in synthesis carbon nanotubes (CNTs) supported bimetallic RuM (M = Cu, Rh, and Pd) alloy nanoparticles (NPs). The non-noble metal Cu with varying atomic ratios RuCu alloys appealing owing low price cost-effective...
The optimization of mesa etch for a quasi-vertical gallium nitride (GaN) Schottky barrier diode (SBD) by inductively coupled plasma (ICP) etching was comprehensively investigated in this work, including selection the mask, ICP power, radio frequency (RF) ratio mixed gas, flow rate, and chamber pressure, etc. In particular, microtrench at bottom corner sidewall eliminated combination dry tetramethylammonium hydroxide (TMAH) wet treatment. Finally, highly anisotropic profile realized using...
We apply a wavefunction approach to study the charge 4$e$ superconductor. The takes similar structure BCS for 2$e$ superconductors. mean-field Hamiltonian and Green's functions of are constructed. physical properties including density states, gauge invariance, flux quantization Josephson effects systematically studied. All these results form microscopic description SC can be served as hallmarks experimental verifications.
Abstract In this letter, the reverse leakage mechanism of thin-barrier AlGaN/GaN Schottky barrier diode (SBD) with recess-free technology is reported for first time. Two types SBD were fabricated different AlGaN thickness (5 and 7 nm). It found that trap-assisted tunneling dominant area-related current in region at low bias, which attributed to traps introduced by fluorine-based dry etch during opening LPCVD SiN x cap. When it highly biased, edge becomes nm SBD, but not 5 SBD. The...
Understanding the physics of doping a charge transfer insulator is most important problem in high-temperature superconductivity. In this work, we show that an in-gap bound state emerges from localized hole doped insulator. We propose approximate ground wavefunction based on one Zhang-Rice singlet and Neel state. By calculating excitation states with added removed state, successfully identify existence inside gap. This feature further proved by MPS-based Lanczos study system $4\times4$...
The oxygen plasma surface treatment prior to ohmic metal deposition was developed reduce the contact resistance (RC) for AlGaN/GaN high electron mobility transistors (HEMTs) on a high-resistive Si substrate. plasma, which produced by an inductively coupled (ICP) etching system, has been optimized varying combination of radio frequency (RF) and ICP power. By using transmission line method (TLM) measurement, 0.34 Ω∙mm specific resistivity (ρC) 3.29 × 10–6 Ω∙cm2 obtained with conditions (ICP...
The behavior of lattice distortion in spin 1/2 antiferromagnetic XY models with random magnetic modulation is investigated the consideration spin—phonon coupling adiabatic limit. It found that relies on strength modulation. For strong or weak enough couplings, average may decrease increase as strengthened. This be result competition between and coupling.
We propose a modified BCS wavefunction as the ground state of correlated superconductor with correlation specified between $k$ and $-k$ electrons in reciprocal space. Owing to this correlation, low-energy excitations are not conventional Bogoliubov quasiparticles. They display at least four poles Green's function their particle-hole weights tunneling photon-emission spectrum become asymmetric. The superfluid density or stiffness also deviates from predictions finite paramagnetic terms inside...
Cooper pairs formed by two electrons with different effective mass are common in multiband superconductors, pair density wave states and other superconducting systems multi-degrees of freedom. In this work, we show that there paramagnetic contributions to the superfluid stiffness superconductors different-mass pairs. This response is owing relative motion between mass. We investigate based on linear theory two-band interband pairings respectively. Our results offer a new perspective...