A5101479028- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- GaN-based semiconductor devices and materials
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Radio Frequency Integrated Circuit Design
- Silicon and Solar Cell Technologies
- Advanced Memory and Neural Computing
- Ga2O3 and related materials
- Ferroelectric and Negative Capacitance Devices
- Semiconductor Quantum Structures and Devices
- Radiation Effects in Electronics
- Superconducting and THz Device Technology
- Magnetic and transport properties of perovskites and related materials
- Electromagnetic Compatibility and Noise Suppression
- Ferroelectric and Piezoelectric Materials
- Advanced Sensor and Energy Harvesting Materials
- Integrated Circuits and Semiconductor Failure Analysis
- Multilevel Inverters and Converters
- Advanced Battery Materials and Technologies
- Membrane-based Ion Separation Techniques
- Luminescence Properties of Advanced Materials
- Membrane Separation Technologies
- Supercapacitor Materials and Fabrication
- ZnO doping and properties
Northwest Institute of Nuclear Technology
2025
Chinese Academy of Sciences
2011-2024
Institute of Microelectronics
2012-2024
Hefei University of Technology
2024
The First Affiliated Hospital, Sun Yat-sen University
2024
Zhongshan Hospital
2024
Fudan University
2021-2024
Sun Yat-sen University
2024
University of Chinese Academy of Sciences
2023-2024
Changchun Institute of Optics, Fine Mechanics and Physics
2024
Fiber electrochemical capacitors show advantages such as light weight and flexibility, may also be easily integrated or woven into various electronic devices with low cost high efficiency.
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based SBDs, including the following sections. First, benchmark for GaN SBDs with different substrates (Si, sapphire, GaN) are presented. Then, latest edge terminal techniques discussed. Finally, a typical fabrication flow of is also illustrated briefly.
Abstract Cr 3+ ‐activated broadband near‐infrared (NIR) phosphors are studied extensively for application in phosphor converted light‐emitting diode (pc‐LED), a new light source substance testing based on NIR spectroscopy. However, the emission of is mainly located I region (700–1000 nm) and many substances show characteristic spectroscopy II (1000–1700 nm). In this paper, dual‐wavelength realized Ni 2+ codoped Zn 3 Ga 2 GeO 8 (ZGGO) via energy transfer from emitting to . The...
ABSTRACT This paper proposed a SIGW wideband 3‐dB coupler that operates mainly in the Ka‐band by combining theory and of branch‐line coupler. Firstly, structure is analyzed. Then, designed using transmission line with five‐branch to realize wideband. Finally, fabricated measured, measurement results are consistent simulation results. The centered at 30 GHz has 40% wide bandwidth (24–36 GHz). return loss better than 10 dB isolation 17 dB. this operating bandwidth, high isolation, easy...
In this article, we report a major breakthrough in the recovery performance of microwave high-power limiters achieved through utilization gallium nitride (GaN) Schottky barrier diode (SBD) monolithic integrated circuit (MMIC) technology. Introducing SBD into limiter design to substitute traditional p-i-n can reduce difficulty by eliminating consideration minority carrier lifetime. The GaN SBD, featuring thin AlGaN epitaxial structure and recess-free process region, achieves low turn-on...
This letter describes efficient high-power rectifiers, using a cost-effective AlGaN/GaN Schottky barrier diode (SBD) with accurate extraction of large-signal parameters as the rectifying device. The thin-barrier (TB) recess-free GaN SBD exhibits low turn-on voltage 0.5 V, on-resistance 6.2 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$~\Omega $</tex-math> </inline-formula> , junction capacitance 0.28 pF,...
In this brief, a high-performance quasi-vertical GaN Schottky barrier diode (SBD) on sapphire substrate with post-mesa nitridation process is reported, featuring low damaged sidewall extremely leakage current. The fabricated SBD drift layer of 1 μm has achieved very high ON/OFF current ratio (ION/IOFF) 1012 ~10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> A/cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> @-10 V, forward density...
Ultraviolet (UV) irradiation has a significant impact on enhancing the performance of sensors. Currently, there is still an urgent need for devices that are simple and easy to fabricate. In this work, cost-effective convenient method was employed fabricate UV light emitting diode. A four-inch silicon based AlGaN/GaN heterojunction substrate used. The Ni/Au (20/20 nm) layer deposited AlGaN barrier layer, followed by thermal oxidation prepare diode annealed in oxygen can emit at wavelength 365...
We present and demonstrate a self-aligned pocket well (SPW) structure used in planar bulk MOSFETs with metal gate length of 25 nm an effective channel less than 20 nm. The SPW features retrograde doping profile vertical direction drain/extension lateral direction. A novel process, called replacement spacer (RSG), is designed to avoid challenges patterning high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
In this work, we investigate the soft breakdown (BD) behavior in thin-barrier (TB) AlGaN/GaN Schottky barrier diode (SBD) with carbon-doped GaN buffer. The BD is result of coupling multiple mechanisms. off-state, ionized carbon (C) acceptors make electric field ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${E}$ </tex-math></inline-formula> -field) crowd at cathode and cause impact ionization. Then,...
In this letter, a multistage high-power RF limiter based on thin-barrier AlGaN/GaN Schottky barrier diode (SBD) has been proposed and demonstrated in 2–6 GHz. By multifinger device layout design with increased total anode width, the resistance of reduces drastically maximum current can be increased, resulting an increase power capacity limiter. addition, benefiting from epitaxial plasma-damage-free SBD fabrication, response time recovery reduced, as well. incorporating fabricated devices...
A ferroelectric and colossal-magnetoresistant material with a Ba0.5Sr0.5TiO3 (BST)/La0.67Sr0.33 MnO3 (LSMO) heterostructure was deposited epitaxially on (001) LaAlO3 substrates through pulsed laser deposition. Measurements of the magnetic properties show no obvious degradation LSMO layer after BST film For film, as temperature decreases from 300 to 20 K, both remanent polarization coercive field increase monotonously up 5.7 µC cm−2 63.7 kV cm−1, respectively. Meanwhile, dependence...
Power MOSFETs are important satellite components. In this paper, a radiation-hardened trench power MOSFET is designed. order to meet the requirements of aerospace uses, anti-total-dose radiation effect performance improved by changing process sequences, gate oxide growing at low temperature and controlling growth atmosphere strictly; Anti-single-event increasing injection dose P-type base region, reducing doping concentration source region shortening width. The fabricated using...
A vertical two-terminal silicon PNPN diode is presented for use in a high-density memory cell. The device design high-speed operations was studied with experiments and calibrated simulations, which proves that the proposed cell can be operated at nanosecond range. static dynamic power dissipations were also studied, indicated availability of VLSI applications. Moreover, compatible CMOS process, has little impact from process variation, good reliability.
Abstract In this letter, the reverse leakage mechanism of thin-barrier AlGaN/GaN Schottky barrier diode (SBD) with recess-free technology is reported for first time. Two types SBD were fabricated different AlGaN thickness (5 and 7 nm). It found that trap-assisted tunneling dominant area-related current in region at low bias, which attributed to traps introduced by fluorine-based dry etch during opening LPCVD SiN x cap. When it highly biased, edge becomes nm SBD, but not 5 SBD. The...
Abstract In this work, the optimization of reverse leakage current ( I R ) and turn-on voltage V T in recess-free AlGaN/GaN Schottky barrier diodes (SBDs) was achieved by substituting Ni/Au anode with TiN anode. To explain phenomenon, transport mechanism investigated temperature-dependent current–voltage I–V characteristics. For forward bias, is dominated thermionic emission (TE) mechanisms for both devices. Besides, presence inhomogeneity height qφ b proved linear relationship between...
Gallium nitride (GaN) has attracted increased attention because of superior material properties, such as high electron saturation velocity and electrical field strength, which are promising for high-power microwave applications. We report on a high-performance vertical GaN-based Schottky barrier diode (SBD) its demonstration in power limiter the first time. The fabricated SBD achieved very low differential specific on-resistance (RON,sp) 0.21 mΩ·cm2, attributed to steep-mesa technology,...