The Holomorphic Embedding Load-Flow Method (HELM) solves the power-flow problem to obtain bus voltages as rational approximants, that is, a ratio of complex-valued polynomials embedding parameter. proof its claims (namely that: 1) it is guaranteed find solution if exists; 2) only high-voltage (operable) solution; and 3) unequivocally signals no exists) are rooted in complex analysis theory developed by Antonio Trias Herbert Stahl. HELM one variant holomorphic method (HEM) for solving...

This paper introduces a PV bus model, compatible with the holomorphic embedding (HE) approach, for solving power-flow bus-power-equilibrium equations (BPEE's). Because BPEE's in traditional form are nonanalytic due to presence of complex-conjugate operator, many powerful tools applicable analytic functions cannot be used. Holomorphism is obtained by into bigger problem such way as render embedded analytic. The effect perform type curve following, but followed that function, not which...

To cope with the explosive growth in demands of wireless network, ultradense network (UDN) technology is widely adopted, which could increase capacity but also bring severe intercell interference (ICI). However, existing solutions cannot work well such complex scenarios, due to limits their mechanisms. solve problem, this article, an interference-oriented radio resource allocation framework proposed multiple usages, including supplying precise, stable, and timely performance feedbacks, near...

This paper presents a novel method for calculating the unstable equilibrium point (UEP) two-bus system using holomorphic embedding (HE). The is guaranteed to find UEP solution. focus of this prove mathematically that if solution exists, arrive at and only no then such indicated by oscillations series form While there limited interest in problem, hopefully first fruitful step can eventually be generalized multi-bus problem and, possibly, other non-linear equations.

Voltage reference is the key module in analog and mixed-signal integrated circuits. This paper presents a radiation-hardened CMOS negative voltage for aerospace electronics. To improve antiradiation performance, circuit design, input pair of operational amplifier replaced from pMOS to nMOS. An extra unity-gain amplification stage added compensation network optimized. Besides, start-up redesigned. In layout annular-gate structure adopted eliminate electric leakage, while technique against...

Power MOSFETs are important satellite components. In this paper, a radiation-hardened trench power MOSFET is designed. order to meet the requirements of aerospace uses, anti-total-dose radiation effect performance improved by changing process sequences, gate oxide growing at low temperature and controlling growth atmosphere strictly; Anti-single-event increasing injection dose P-type base region, reducing doping concentration source region shortening width. The fabricated using...

Ultra-dense network (UDN) is considered to be the key technology for fifth generation (5G) networks provide high capacity. However, intensive deployment of femtocells bring severe inter-cells interference (ICI), which greatly limits performance and capacity gain system can obtain. Therefore, solve this problem obtain accurate information through modeling. In fact, wireless big data generated during operation contains rich information. Based on this, paper proposes an uplink identification...

This paper presents the issues in data conformity between Common Information Model (CIM) format (operational) and PSS®E (planning) for exchange simulation purposes. The tool used to conduct this test is Siemens CIM-based product, PSS®ODMS, network model management (NMM). primary focus of present potential modeling suggestions better CIM PSS®E, through Node-Breaker cases. Additionally, mapping challenges their solutions HVDC line modeling, transformer have also been discussed work....

Based on the energy-bus equalization network, a multivariable coordinated scheme is proposed in this paper. First, sufficient condition for synchronous topology deduced. Second, by designing coordinator implements multivariate which can select voltage or state of charge (SOC)or ratio and SOC as final variable. Third, an control strategy that double closed loop Fuzzy-PI controller with adaptive fuzzy designed. By experiments demonstrate effective superior.

Due to the range of measuring system is limited in measurement large aspheric optical elements, test hard be once fulfilled, so coordinate based on multi-section stitching proposed, and least square mathematical model aperture elements built. Moreover, profiler Talysurf PGI 1240 made by Taylor Hobson company used for study. The result shows that, method suitable data possesses many advantages, such as fast speed, high accuracy strong operability, etc.

Based on energy-bus equalization network, a double closed loop Fuzzy-PI controller with an adaptive fuzzy coordinator is designed in this paper. The energy the network can be transferred from one to others through bus. analysis, SOC logic and voltage are outer loop. selects as dominant part outputting expected current. PI directly control current inner indirectly combines automatically tends better one. proposed method verified by simulations experiments

The area-interchange control plays a key factor in power system modeling, especially when ISO/TSO conducts network validation and merges the areas to realize predicted locational marginal price with scheduled area interchanges. This paper has presented an approach by concept of slack load either two-stage correction or augmented power-flow equations. Statnett Nordic 44 test case been used for proposed algorithm.

A total dose radiation hardened trench VDMOS device is fabricated. This paper briefly introduces the designing methods of epitaxial wafer, n-type body region doping concentration and drive-in condition, source concentration, width depth, cell size. In this paper, doped driven-in before growth gate oxide. Simulation data, experimenting results after are given, comparisons analyzed. For specified introduced in threshold voltage shift -0.8V at a 100krad (Si). result indicates that designed...