A5101765075- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Ga2O3 and related materials
- Silicon Carbide Semiconductor Technologies
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Memory and Neural Computing
- Semiconductor Quantum Structures and Devices
- Metal and Thin Film Mechanics
- Semiconductor materials and interfaces
- Advanced Sensor and Energy Harvesting Materials
- Electronic and Structural Properties of Oxides
- Perovskite Materials and Applications
- Acoustic Wave Resonator Technologies
- Plasma Diagnostics and Applications
- Radio Frequency Integrated Circuit Design
- Chalcogenide Semiconductor Thin Films
- Ferroelectric and Piezoelectric Materials
- Ferroelectric and Negative Capacitance Devices
- Analytical Chemistry and Sensors
- Quantum Dots Synthesis And Properties
- Advanced Photocatalysis Techniques
- Mechanical and Optical Resonators
- Advanced Power Amplifier Design
Southern University of Science and Technology
2016-2025
Institute of Microelectronics
2019-2024
National University of Singapore
2022
Hong Kong Polytechnic University
2022
Beijing Microelectronics Technology Institute
2022
Hong Kong University of Science and Technology
2019-2022
University of Hong Kong
2019-2022
Shanghai Fudan Microelectronics (China)
2022
Fudan University
2022
ON Semiconductor (United States)
2021
Abstract Understanding the fundamental properties of buried interfaces in perovskite photovoltaics is paramount importance to enhancement device efficiency and stability. Nevertheless, accessing poses a sizeable challenge because their non‐exposed feature. Herein, mystery interface full stacks deciphered by combining advanced situ spectroscopy techniques with facile lift‐off strategy. By establishing microstructure–property relations, basic losses at contact are systematically presented, it...
Thin-film flexible solar cells are lightweight and mechanically robust. Along with rapidly advancing battery technology, panels expected to create niche products that require lightweight, mechanical flexibility, moldability into complex shapes, such as roof-panel for electric automobiles, foldable umbrellas, camping tents, etc. In this paper, we provide a comprehensive assessment of relevant materials suitable making cells. Substrate reviewed include metals, ceramics, glasses, plastics. For...
Abstract The performance of perovskite photovoltaics is fundamentally impeded by the presence undesirable defects that contribute to non-radiative losses within devices. Although mitigating these has been extensively reported numerous passivation strategies, a detailed understanding loss origins devices remains elusive. Here, we demonstrate defect capturing probability estimated capture cross-section decreased varying dielectric response, producing screening effect in perovskite. resulting...
Abstract The ever‐increasing power density and operation frequency in electrical conversion systems require the development of devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as candidate for next‐generation to improve efficiency high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off is an important device structure different application scenarios. In this review, overview a series effective...
We report the use of metal oxide resistive switching memory (RRAM) as synaptic devices for a neuromorphic visual system. At device level, we experimentally characterized gradual resistance modulation RRAM by hundreds identical pulses. As compared with phase change (PCM) reported recently in [1,2], >100×-1000× energy consumption reduction was achieved (<;1 pJ per spike). Based on experimental results, developed stochastic model to quantify dynamics. system simulated performance image...
In this work, a thin-film transistor gas sensor based on the p-N heterojunction is fabricated by stacking chemical vapor deposition-grown tungsten disulfide (WS2) with sputtered indium-gallium-zinc-oxide (IGZO) film. To best of our knowledge, present device has NO2 response compared to all sensors transition-metal dichalcogenide materials. The gas-sensing investigated under different concentrations, adopting mode and mode. High sensing obtained diode in range 1-300 ppm values 230% for 5 18...
The demand for economical and efficient data processing has led to a surge of interest in neuromorphic computing based on emerging two-dimensional (2D) materials recent years. As rising van der Waals (vdW) p-type Weyl semiconductor with many intriguing properties, tellurium (Te) been widely used advanced electronics/optoelectronics. However, its application floating gate (FG) memory devices information never explored. Herein, an electronic/optoelectronic FG device enabled by Te-based 2D vdW...
The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). Atomic layer deposition (ALD) deposited ZnO an attractive candidate due its excellent electrical properties, low processing temperature below copper interconnect thermal budget, and conformal sidewall for novel 3D architecture. An optimized ALD thin-film transistor...
The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance devices. In this study, we review our recent study on graphene–metal characteristics from following viewpoints: (1) preparation method; (2) asymmetric conductance; (3) annealing effect; (4) interfaces impact.
Transport measurements of both the dc and low-frequency ac are performed on Pt/HfO${}_{2\ensuremath{-}x}$/TiN resistive-switching memory cells at various temperatures. The conductance pristine has a power law ${\ensuremath{\omega}}^{S}{T}^{N}$ relationship with temperature frequency. To account for much larger high resistance states (HRSs) low (LRSs), an additional term associated oxygen vacancy filaments is added, which independent cross-sectional area cell. This component in HRS frequency...
Abstract As an optical material, Y 2 O 3 transparent ceramics are desirable for application as laser host materials. However, it is difficult to sinter and dense of hinders the preparation high-quality via traditional processes. In this work, we use La a sintering aid fabricating high-transparency using vacuum process. It demonstrated that in-line transmittance 15.0 at% La-doped at wavelength 1100 nm achieves 81.2%. A kinetics analysis reveals grain-boundary-diffusion-controlled mechanism...
Abstract Controlling defects and energy‐band alignments are of paramount importance to the development high‐performance perovskite‐based photodiodes. Yet, concurrent improvements in interfacial contacts defect reduction simply by tailoring bottom have not been investigated. An effective strategy is reported that can simultaneously improve structural introducing low‐dimensional contact (LDC) layers at interface. It found LDC‐based perovskites considerably suppress undesirable induced...
Normally-off AlGaN/GaN MIS-HEMTs with a high threshold voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\text {th}}$ </tex-math></inline-formula>) more than 2.5 V and low on- resistance of <inline-formula> notation="LaTeX">$5.5\Omega \cdot $ </tex-math></inline-formula>mm have been achieved by an improved regrowth technique <i>in-situ</i> SiN<sub><i>x</i></sub> passivation. A thin-barrier heterojunction was used to decrease the two-dimensional electron gas (2DEG) underneath...
In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN HEMTs, which wraps around the bottom of forming Ti/graphene/p-GaN at Ti/graphene/ SiNx on two sides. Compared to Au/Ti/p-GaN HEMTs without graphene, can increase ION/IOFF ratios by a factor 50, VTH 0.30 V reduce off-state leakage 50 times. Additionally, novel structure has better thermal stability. After annealing 350 {\deg}C, breakdown voltage holds 12.1 V, is first...
Abstract The crystal structures and properties of hafnium hydride under pressure are explored using the first-principles calculations based on density function theory. material undergoes pressure-induced structural phase transition I 4/ mmm → Cmma P 2 1 / m at 180 250 GPa, respectively all these metallic. superconducting critical temperature T c values , 47–193 mK, 5.99–8.16 K 10.62–12.8 atm, 260 respectively. Furthermore, bonding nature HfH is investigated with help electron localization...
We present a novel p-gallium nitride (GaN) gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in metal-organic chemical vapor deposition (MOCVD), which aims at lowering electric field across gate. By employing additional unintentionally doped GaN (u-GaN) layer, leakage current is suppressed and breakdown voltage boosted from 10.6 to 14.6 V negligible influence on threshold ON-resistance. A Mg u-GaN layer was confirmed secondary-ion mass...
Abstract Combinatorial optimization (CO) has a broad range of applications in various fields, including operations research, computer science, and artificial intelligence. However, many these problems are classified as nondeterministic polynomial‐time (NP)‐complete or NP‐hard problems, which known for their computational complexity cannot be solved polynomial time on traditional digital computers. To address this challenge, continuous‐time Ising machine solvers have been developed, utilizing...
In this paper, a systematic design and analysis of gallium arsenide thin film solar cells incorporated with periodic silver nanoparticles (NPs) structure to enhance light absorption is presented using the finite element method. The influence diameter periodicity on has been examined. It found that significantly enhanced due surface plasmon induced by nanoparticles. optimal structural parameters are achieved when 200 nm 444 nm. This gives rise maximum ultimate photocurrent 26.32 mA/cm2 under...