A5008210617- GaN-based semiconductor devices and materials
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- ZnO doping and properties
- Semiconductor Quantum Structures and Devices
- Ga2O3 and related materials
- Semiconductor materials and interfaces
- Radio Frequency Integrated Circuit Design
- Silicon and Solar Cell Technologies
- solar cell performance optimization
- Plasma Diagnostics and Applications
Southern University of Science and Technology
2021-2022
National University of Singapore
2022
Hong Kong Polytechnic University
2022
Beijing Microelectronics Technology Institute
2022
Hong Kong University of Science and Technology
2022
University of Hong Kong
2022
Normally-off AlGaN/GaN MIS-HEMTs with a high threshold voltage (<inline-formula> <tex-math notation="LaTeX">$\text{V}_{\text {th}}$ </tex-math></inline-formula>) more than 2.5 V and low on- resistance of <inline-formula> notation="LaTeX">$5.5\Omega \cdot $ </tex-math></inline-formula>mm have been achieved by an improved regrowth technique <i>in-situ</i> SiN<sub><i>x</i></sub> passivation. A thin-barrier heterojunction was used to decrease the two-dimensional electron gas (2DEG) underneath...
The high-k nature of HfO2 makes it a competitive gate oxide for various GaN-based power devices, but the high trap densities at HfO2/GaN interface have hindered application. This work was specifically carried out to explore between GaN and ozone-based atomic-layer-deposited oxide. Furthermore, surface is preoxidized before deposition prepare an oxygen-rich interface. On surface, sharper amorphous bulk form during subsequent deposition, translating improved electric performance in...
In this article, a β-Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> metal-interlayer-semiconductor Schottky barrier diode (MIS-SBD) using Al-reacted aluminum oxide as the interlayer is demonstrated for first time and compared with conventional metal-semiconductor (MS) (SBD). The formed by sputtering thin Al layer on Ga substrate then annealed in at 300 °C. With insertion of...
In this paper, we demonstrated a gold-free Ti <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> Al xmlns:xlink="http://www.w3.org/1999/xlink">1</sub> /TiN source and drain (S/D) contact on non-recessed AlGaN/AlN/GaN structure. Compared to the conventional gold-based (Ti/Al/Ti/ Au Ta/ Al/Au) or multilayer (Ti/Al/TiN Ta/Al/Ta) S/D metals, using (60 nm/60 nm) dual-layer metal, low resistivity of 0.11 Ω·mm was achieved after 920 °C/ 60 s...
In this paper, we proposed a Ti <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</inf> Al xmlns:xlink="http://www.w3.org/1999/xlink">1</inf> /TiN gold-free ohmic contact on InAlN/GaN high electron mobility transistors (HEMTs). The fabricated devices exhibited very low resistance of 0.183 Ω•mm and achieved good on-state performance with maximum drain current (I xmlns:xlink="http://www.w3.org/1999/xlink">d, max</inf> ) 2.10 A/mm, on-resistance (R...
In this work, we use Si/Tl5Al1/TiN for a source/drain ohmic contact to demonstrate an ultra-low resistance of 0.11 Ω mm (ρc = 2.62 × 10−7 cm2) on non-recessed i-InAlN/GaN heterostructures. The Ti5Al1 alloy was used suppress the out-diffusion Al and extract N from InAlN layer, which aided formation by improving tunneling efficiency electrons, as have reported in past work. A thin Si inter-layer combined with is proposed further reduce resistance. heavy n-type layer obtained through doping...