A5028967702- ZnO doping and properties
- Thin-Film Transistor Technologies
- Semiconductor materials and devices
- Microwave Engineering and Waveguides
- Advanced Memory and Neural Computing
- Semiconductor materials and interfaces
- Ferroelectric and Negative Capacitance Devices
- Radio Frequency Integrated Circuit Design
- Antenna Design and Analysis
- Advanced Antenna and Metasurface Technologies
- Photonic and Optical Devices
- Ferroelectric and Piezoelectric Materials
- Advanced Photonic Communication Systems
- Electronic and Structural Properties of Oxides
- Phase-change materials and chalcogenides
- Chalcogenide Semiconductor Thin Films
- PAPR reduction in OFDM
- Full-Duplex Wireless Communications
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Low-power high-performance VLSI design
- Analog and Mixed-Signal Circuit Design
- Modular Robots and Swarm Intelligence
- X-ray Diffraction in Crystallography
- Reproductive tract infections research
Southern University of Science and Technology
2018-2024
Kaiping Central Hospital
2024
Hohai University
2021
University of Alberta
2012-2018
University of Electronic Science and Technology of China
2015
Commonwealth Scientific and Industrial Research Organisation
2004-2014
Information and Communication Technologies Centre
2010
Iowa State University
2008
The ultrafast laser excitation of matters leads to nonequilibrium states with complex solid-liquid phase-transition dynamics. We used electron diffraction at mega-electron volt energies visualize the melting gold on atomic scale length. For energy densities approaching irreversible regime, we first observed heterogeneous time scales 100 1000 picoseconds, transitioning homogeneous that occurs catastrophically within 10 20 picoseconds higher densities. showed evidence for coexistence solid and...
The development of high-performance oxide-based transistors is critical to enable very large-scale integration (VLSI) monolithic 3-D integrated circuit (IC) in complementary metal oxide semiconductor (CMOS) backend-of-line (BEOL). Atomic layer deposition (ALD) deposited ZnO an attractive candidate due its excellent electrical properties, low processing temperature below copper interconnect thermal budget, and conformal sidewall for novel 3D architecture. An optimized ALD thin-film transistor...
In this work, the effect of Ar plasma at S/D contact in a low temperature (200°) fabricated ALD ZnO thin-film transistors (TFTs) for resistance reduction is systematically studied. With an optimized process time, significantly reduced by >50% from 170 to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$84 {\sf \Omega }/\mu \text{m}$ </tex-math></inline-formula> . This attributed oxygen vacancies modulating...
Abstract The search for high‐performance resistive random‐access memory (RRAM) devices is essential to pave the way highly efficient non‐Von Neumann computing architecture. Here, it reported on an alloying approach using atomic layer deposition a Zn‐doped HfO x ‐based (HfZnO RRAM), with improved performance. As compared RRAM, HfZnO RRAM exhibits reduced switching voltages (>20%) and energy (>3×), as well better uniformity both in resistance states. Furthermore, stable retention...
A 4th-generation Alpha microprocessor running at 1.2 GHz delivers up to 44.8 GB/s chip pin bandwidth and dissipates 125 W 1.5 V. It contains a 1.75 MB 2nd level write-back-cache, two memory controllers supporting 8 Rambus/sup TM/ channels 800 Mb/s, four 6.4 inter-processor communication ports, separate 10 port capable of GB/s. The measures 21.1/spl times/18.8 mm/sup 2/, 130 M transistors is fabricated in 0.18 /spl mu/m bulk CMOS process with 7 levels copper interconnect.
To address a "number of emerging applications" it is advantageous to synthesize semiconductor material on top metal contacts. This among the first reports ZnO grown copper (Cu) form Schottky contact (SC). Electrical and analytical studies were performed SCs with ultrathin films by atomic layer deposition (ALD) in this work. Similar thickness 30 nm nanocrystal deposited plasma-enhanced ALD (PEALD) thermal (TALD). Devices PEALD-ZnO thin exhibited rectification barrier height 0.55 eV an...
Abstract This paper describes an integrated circuit‐based, down‐converting receiver module operating in the 176–200‐GHz range. The multichip incorporates a cascaded pair of indium phosphide (InP) monolithic microwave circuit (MMIC) amplifiers, providing combined gain more than 30 dB over band. output from amplifiers is fed to subharmonically pumped InP passive‐HEMT block down‐converter that provides IF 0.5–15‐GHz range with local oscillator (LO) signal between 46 and 50 GHz. A gallium...
A bond-wire-free interconnection between monolithic microwave integrated circuit (MMIC) and antenna using a stacked patch configuration is investigated. An edge-fed on gallium arsenide (GaAs) MMIC chip drives in the lid of package. The formed liquid crystal polymer (LCP) substrate. first implementation laminated multichip module (MCM-L) process presented that covers designated E-band spectrum for long-range wireless communications (71-86 GHz). Electromagnetic simulations measurements...
Herein, we report a solution-processable memristive device based on bismuth vanadate (BiVO4) and titanium dioxide (TiO2) with gallium-based eutectic gallium-indium (EGaIn) gallium-indium-tin alloy (GaInSn) liquid metal as the top electrode. Scanning electron microscopy (SEM) shows formation of nonporous structure BiVO4 TiO2 for efficient resistive switching. Additionally, (GLM)-contacted memristors exhibit stable memristor behavior over wide temperature range from -10 to +90 °C. Gallium...
The lack of low temperature processable, high-performance p-type oxide thin-film transistors (TFTs) limits their implementation in monolithically integrated back-end-of-line (BEOL) CMOS circuitries. In this work, we demonstrate a reactive magnetron-sputtered SnOx TFT with unprecedented hole field-effect mobility (μFE-hole) 38.7 cm2/V·s, as well an on/off current ratio (Ion/off) 2.5 × 103 and lower subthreshold swing (SS) 240.9 mV/dec when compared to reported works on oxide-based TFTs....
Contact effects at the source/drain (S/D) electrodes in thin film transistors (TFTs) based on zinc oxide (ZnO) utilizing top gate, bottom contact geometry are investigated using electrical and material studies. Low temperature atomic layer deposition (ALD) is employed to directly grow ZnO active Au, Ru, TiW electrodes. TFT performance varies significantly depending S/D metallization scheme. Au contacts seen uniquely promote growth of a highly n-doped channel that degrades TFT's output...
Abstract Doped‐metal oxide‐based memristors, with the potential for improved switching performance and capability multi‐bit information storage, are attractive candidates in implementation of artificial neural network (ANN) hardware systems. However, process considerations such as behavior complementary‐metal‐oxide‐semiconductor (CMOS) compatibility remain a challenge. This study shows that amorphous Zr‐doped HfO 2 (HZO) memristors fabricated via co‐sputtering approach improve by providing...
70-90 GHz integrated receive and transmit modules with sub-harmonic frequency translation were developed using a GaAs MMIC chip set. These have reported -3 dB bandwidth above 9 6 respectively for the down-converter up-converter. With common 39.25 LO frequency, are well suited RF transceivers of full-duplex wireless communication systems operating in both 71-76 81- 86 bands lower or upper side-band conversion each chosen (receive transmit) direction.
Abstract This paper describes a high‐gain, single‐sideband, upconverting transmitter module developed for point‐to‐point telecommunications in the 83–87‐GHz band. Four gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs), which can readily be fabricated using standard commercial processes, are used multichip module. The exhibits typical lower‐sideband up‐conversion gain of 20 dB and output power +5 dBm (at −1‐dB compression) between 83 87 GHz. Suppression higher sideband...
A stacked patch configuration is used to electromagnetically couple a GaAs MMIC chip antenna integrated in the lid of package. The formed using liquid crystal polymer substrate. Presented first implementation that covers E-band frequency range from 71–86 GHz for long-range wireless communications. Antenna gain greater than 8 dBi short horn with straight sidewalls.
Abstract This paper describes a low‐noise, high‐gain, single‐sideband, downconverting receiver module developed for point‐to‐point telecommunications in the 82–104‐GHz range. Two indium phosphide (InP) and two gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) are used multi‐chip module. For RF frequencies range within 1–3‐GHz IF band, exhibits typical single‐sideband down‐conversion gain between 15 20 dB noise figure of 4 5 dB. In same frequency range, suppression...
This paper reports design and test results of a wideband low-complexity RF transceiver for full duplex multi-gigabit communication systems operating in 71-76 81-86 GHz frequency bands based on high-performance integrated multi-chip conversion modules that use commercial GaAs MMICs.