A5090116401- Semiconductor materials and devices
- ZnO doping and properties
- Icing and De-icing Technologies
- nanoparticles nucleation surface interactions
- Sensor Technology and Measurement Systems
- Surface Modification and Superhydrophobicity
- Metamaterials and Metasurfaces Applications
- GaN-based semiconductor devices and materials
- Semiconductor materials and interfaces
- Catalytic Processes in Materials Science
- Ga2O3 and related materials
- Thin-Film Transistor Technologies
- Polymer crystallization and properties
- Integrated Circuits and Semiconductor Failure Analysis
- Polymer Nanocomposites and Properties
- Quantum Electrodynamics and Casimir Effect
- Advanced materials and composites
- Electronic and Structural Properties of Oxides
- VLSI and Analog Circuit Testing
- Gas Dynamics and Kinetic Theory
- Advanced Electrical Measurement Techniques
- Analog and Mixed-Signal Circuit Design
- Nanopore and Nanochannel Transport Studies
- Microstructure and mechanical properties
- Aluminum Alloys Composites Properties
Brown University
2023
Mississippi State University
2018-2020
University of Alberta
2012-2018
Shahid Beheshti University
2016-2017
Redlen Technologies (Canada)
2016
Sahand University of Technology
2014
Sharif University of Technology
2008-2009
Dipole-dipole interactions (Vdd) between closely spaced atoms and molecules are related to real photon virtual exchange them decrease in the near field connected with characteristic Coulombic dipole law. The control modification of this marked scaling distance have become a long-standing theme quantum engineering since dipole-dipole govern Van der Waals forces, collective Lamb shifts, atom blockade effects, Förster resonance energy transfer. We show that metamaterials can fundamentally...
Atomic layer deposition of zinc oxide (ZnO) using diethylzinc (DEZ) and water is studied density functional theory. The reaction pathways between the precursors ZnO surface sites are discussed. Both reactions proceed by formation intermediate complexes on surface. Gibbs free energy these positive at temperatures above ∼120 °C ∼200 for DEZ half-reactions, respectively. Spectroscopic ellipsometry results show that growth per cycle changes approximately same temperatures.
Abstract Wide-bandgap, metal-oxide thin-film transistors have been limited to low-power, n-type electronic applications because of the unipolar nature these devices. Variations from field-effect transistor architecture not widely investigated as a result lack available p-type wide-bandgap inorganic semiconductors. Here, we present semiconductor that is able sustain strong inversion layer using high-dielectric-constant barrier dielectric when sourced with heterogeneous material. A...
Core@shell nanoparticles (NPs) have been widely explored to enhance catalysis due the synergistic effects introduced by their nanoscale interface and surface structures. However, creating a catalytically functional core@shell structure is often synthetic challenge need control shell thickness. Here, we report one-step approach core–shell CuPd@Pd NPs with an intermetallic B2-CuPd core thin (∼0.6 nm) Pd shell. This shows enhanced activity toward selective hydrogenation of Ar-NO2 allows one-pot...
A low-temperature atomic layer deposition technique for high-κ dielectric films on GaN templates was investigated MOS applications. This improved growth method produced capacitance densities and a field effect mobility approaching 375 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /Vs ZrO <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> 250 HfO GaN. Furthermore, the low density of dielectric-semiconductor interface traps...
The demonstration of biosensors based on the surface plasmon effect holds promise for future high-sensitive electrodeless biodetection. combination magnetic effects with waves brings additional freedom to improve sensitivity and signal selectivity. Stacking two-dimensional (2-D) materials, e.g., graphene (Gr) MoS2, can influence facilitate physiochemical properties as versatility aspects. We demonstrate magnetoplasmonic through detuning oscillation modes affected by via presence NiFe (Py)...
Health care providers have shown considerable interest in using information technologies such as email, text messages and video conferencing to facilitate the management of chronic noncommunicable diseases hypertension, diabetes mellitus vascular disease. We sought determine whether these are available appealing target population.We analyzed cross-sectional data from a computer-assisted telephone survey, conducted by Statistics Canada February March 2012, western Canadian adults with at...
To address a "number of emerging applications" it is advantageous to synthesize semiconductor material on top metal contacts. This among the first reports ZnO grown copper (Cu) form Schottky contact (SC). Electrical and analytical studies were performed SCs with ultrathin films by atomic layer deposition (ALD) in this work. Similar thickness 30 nm nanocrystal deposited plasma-enhanced ALD (PEALD) thermal (TALD). Devices PEALD-ZnO thin exhibited rectification barrier height 0.55 eV an...
We have fabricated ZnO source-gated thin film transistors (SGTFTs) with a buried TiW source Schottky barrier and top gate contact. The active channel high-κ HfO2 dielectric utilized are both grown by atomic layer deposition at temperatures less than 130 °C, their material electronic properties characterized. These SGTFTs demonstrate enhancement-mode operation threshold voltage of 0.91 V, electron mobility 3.9 cm2 V−1 s−1, low subthreshold swing 192 mV/decade. devices also exhibit unique...
Organic solar cells (OSCs) are a complex assembly of disparate materials, each with precise function within the device. Typically, electrodes flat, and device is fabricated through layering approach interfacial layers photoactive materials. This work explores integration high surface area transparent to investigate possible role(s) three-dimensional electrode could take an OSC, BHJ composed donor-acceptor combination degree electron hole mobility mismatch. Nanotree indium tin oxide (ITO)...
ZrO2 has been deposited on GaN by Atomic Layer Deposition. Multiple Metal-Oxide-Semiconductor Capacitors with 4.4 nm, 5.4 and 8.5 nm of oxide were fabricated Cr electrodes. Capacitance measurements produce capacitance densities as high 3.8 μF/cm2. Current 0.88 A/cm2 at 1 V for the oxides hysteresis values less than 6 mV observed 5.8 oxide, indicating an interfacial Dit not greater 6.4 × 1010 cm2. Temperature dependent current revealed no signature Poole-Frankel component. Comprehensive...
This paper presents a capacitance model and mobility extraction method through the use of tapered transmission line theory for accumulation-mode MOSCAP test structures. The analytical accounts discrepancies commonly found when measuring nontraditional architectures. Through fabrication planar MOSCAP, this accurately reproduced consistent density measurements several device dimensions high-κ dielectric thicknesses. In paper, theoretical basis extracts effective electron accumulation channel...
Contact effects at the source/drain (S/D) electrodes in thin film transistors (TFTs) based on zinc oxide (ZnO) utilizing top gate, bottom contact geometry are investigated using electrical and material studies. Low temperature atomic layer deposition (ALD) is employed to directly grow ZnO active Au, Ru, TiW electrodes. TFT performance varies significantly depending S/D metallization scheme. Au contacts seen uniquely promote growth of a highly n-doped channel that degrades TFT's output...
To enable scalable MOSFET technology in III-V semiconductor platforms, high quality semiconductor-oxide interfaces are essential. In this paper, a novel low-temperature plasma-enhanced atomic layer deposition (PEALD) technique was applied to deposit nanoscale high-k dielectrics on several substrates, including InP, GaAs, InAs, and GaN. Approximately 7 nm of ZrO2 grown patterned form MOSCAP structures, which were subsequently analyzed through electrical characterization evaluate dielectric...
In this work, we conducted molecular dynamics simulations to study the fracture mechanism of ice crystals in a bulk phase and at ice-ice interfaces atomistic scale. We show that there exists narrow disordered interfacial layer between two Ih structures. The width is determined be about size water molecules. Upon deformation, stress response interface significantly anisotropic behaviors depending on direction deformation. Bulk-like behavior observed when deformation being orthogonal plane....
We demonstrate experimentally that hyperbolic metamaterials fundamentally alter dipole-dipole interactions conventionally limited to the near-field. The effect is captured in long-range energy transfer and lifetime reduction of donor emitters due acceptors placed 100 nm away.