With low energy electron irradiation in the 80–250keV range, we were able to create only those intrinsic defects related initial displacements of carbon atoms silicon carbide lattice. Radiation induced majority and minority carrier traps analyzed using capacitance transient techniques. Four (EH1, Z1∕Z2, EH3, EH7) one hole trap (HS2) detected measured temperature range. Their concentrations show linear increase with dose, indicating that no divacancies or di-interstitials are generated. None...

Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based SBDs, including the following sections. First, benchmark for GaN SBDs with different substrates (Si, sapphire, GaN) are presented. Then, latest edge terminal techniques discussed. Finally, a typical fabrication flow of is also illustrated briefly.

In this article, the single-event response of 1.2-kV silicon-carbide (SiC) power MOSFETs with varied buffer layer designs is investigated by 2-D numerical simulations. The structural parameters layers are compared and analyzed to understand transient after heavy ion strike related physical mechanisms comprehensively. Simulation results reveal that an optimized single structure can be acquired using a relatively thicker (T μm) moderate doping concentration (D cm <sup...

Abstract Heterostructures endow electrochemical hybrids with promising energy storage properties owing to synergistic effects and interfacial interaction. However, developing a facile but effective approach maximize interface is crucial challenging. Herein, bimetallic selenide heterostructure realized in confined carbon network via an situ strategy induce highly active stable electrode architecture. The dynamically formed heterostructures upon repeated delithiation/lithiation process not...

Based on audience preferences for short videos with rapid pace and plot twists, micro-series characterized by their brief, exhilarating, refined content have shown explosive growth. At the same time, they also led to considerable viewer addiction. This paper aims explore psychological mechanisms behind this addiction micro-series. Using case study analysis, it examines three representative works in China's industry: "Hi, Mom," "Auntie'sWorld," "Twenty-Nine." It analyzes why these series...

In this article, theoretical modeling and vibration characteristics of a spinning double-blade beam assembly restricted by elastic supports are studied. Graphene nanoplatelet (GPL) reinforcement porous foamed metal matrix adopted to make up the structure. Due nonuniformity porosity graphene nanofillers, material properties attached blades considered change along blade thickness radius, respectively. They obtained via rule mixture, open-cell scheme Halpin-Tsai micromechanics model. These...

SiC MOSFET integrated with Schottky barrier diode (SBD) can handle the reverse current during switching operation and reduce package cost. However, SBD weakens high-voltage-withstanding capability of MOSFET. In this article, a novel 4H-SiC trench mesa-sidewall (TMS-SBD) is proposed studied 2-D simulation. Compared locating on mesa (TM-SBD), TMS-SBD shows larger breakdown voltage (BV), lower electric field in gate oxide, better tradeoff between BV specific ON-resistance. The also same as that...

The <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula> – notation="LaTeX">${V}$ characteristics of 4H-SiC N/P-channel MOSFETs have been carried out at high temperatures up to 300 °C. Different scattering mechanisms surface mobility for N-channel studied in this article. Moreover, the temperature dependencies various mobilities P-channel are given first time. Their were...

Leakage current of 1200-V 4H-SiC Schottky barrier diodes (SBDs) with different structures increased by various degrees after heavy-ion exposure. By taking <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>&#x2013;<inline-formula> notation="LaTeX">${V}$ </tex-math></inline-formula> measurements in a range 298 to 448 K, the voltage dependence saturation (<inline-formula> notation="LaTeX">$I_{0}$ </tex-math></inline-formula>), height notation="LaTeX">$\phi _{B0}$ and...

The threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}$ </tex-math></inline-formula> ) instability induced by gate stress has always been a significant reliability issue for silicon carbide (SiC) MOSFET. negative bias temperature (NBTI) of 4H-SiC p-channel MOSFET (pMOS) was studied experimentally at 200 °C and compared with that n-channel (nMOS). It is shown the drift pMOS...

A novel 1200 V 4H-SiC MOSFET, which features a current spreading layer, split-gate and central P+ implant in the junction field effect transistor region (CSI-MOSFET), is proposed. The CSI-MOSFET achieves better trade-off among specific on-resistance, maximum electric gate oxide switching loss. comprehensively optimized with numerical simulation, then two kinds of CSI-MOSFETs (FCSI-MOSFET GCSI-MOSFET floating/grounded implant) are further investigated. Compared conventional double implanted...

The ability of high-voltage power MOSFETs to withstand avalanche events under different temperature conditions are studied by experiment and two-dimensional device simulation. is performed investigate dynamic failure behavior the domestic which can occur at rated maximum operation range (−55 150 °C). An advanced ISE TCAD mixed mode simulator with thermodynamic non-isothermal model used analyze mechanism. unclamped inductive switching measurement simulation results show that parasitic...

CdSxSe1−x nanobelts with uniform and controllable composition are successfully fabricated by a one-step vapor-liquid-solid process. Temperature-dependent steady time-resolved transient photoluminescence (PL) studied for the obtained as well pure CdS CdSe prepared in same method. For all samples, both band edge surface state emission found to contribute observed PL spectra. However, originated from is quite weak compared CdSe. The reduced ascribed exciton localization due random potential...

In this paper, a new 200V power MOSFET structure with widened split gate trench to enhance single-event radiation hardness is proposed and studied by numerical simulation. The not only offers great Rds(on)×Q <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gd</sub> FOM, but also 55.3% wider radiation-hard Safe Operating Area (RHSOA) than the conventional structure. RHSOA advantage of device due elimination P-well region beneath N+ source almost...

The ±500kV Xiluodu-Guangdong HVDC system in China is a 6400MW transmission double bipole scheme. It the new project designed scheme of two bipoles with common earth electrode and four DC lines erected on single tower. In contrast to traditional project, this obviously has further requirement for control protection system. First, detail research operating modes presented paper which fulfills both flexibility reliability requirements Then, well-designed hierarchical configuration put forward,...

The ability of high-voltage power MOSFETs and IGBTs to withstand avalanche events under unclamped inductive switching (UIS) conditions is measured. This measurement investigate compare the dynamic failure behavior IGBT, which occur at different current conditions. UIS results show that main reason related parasitic bipolar transistor, leads deterioration reliability MOSFETs. However, IGBT two behaviors. At high mode, similar situation. But low mechanism thyristor activity during occurrence...

The heavy ion radiation response and degradation of SiC junction barrier Schottky (JBS) diodes with different P+ implantation intervals (S) are studied in detail. experimental results show that the larger S, faster reverse leakage current increases, more serious after experiment. TCAD simulation shows electric field sensitive points directly affects rate devices structures. large transient energy introduced by impact can induce a local temperature increase device resulting lattice damage...

Morphology-controlled Te nanostructures are synthesized by a viable and eco-friendly solution process, realizing the formation of high-quality two-dimensional tellurene one-dimensional nanotubes, nanowires, nanocables.

In this Letter, a 1.2 kV SiC power MOSFET with partially widened retrograde P‐well (RP) structure and N ‐implanting region is proposed to enhance the device's reliability. Compared conventional MOSFET, short circuit (SC) ability of can be improved effectively without sacrificing other performance. Simulation results reveal that 40% reduction SC saturation current achieved, resulting in withstand time increase from 7 10 μs at DC‐link voltage 800 V. Moreover, better gate oxide reliability...

In this work, Sentaurus TCAD was used to study the transient surge current mechanism of 4H-SiC merged pin and schottky (MPS) diode. For first time, a structure combining multicells with transition region analyze MPS The electrothermal simulation analysis characteristics diode is carried out. Internal carrier distribution lattice temperature in process device are mainly studied. results show that hole electron not uniform. current, enters bipolar conduction mode, then, cells active enter mode...

We present a single-event burnout (SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional (3D) numerical simulation. The advantage of the proposed structure is that work parasitic bipolar transistor inherited in suppressed effectively due to elimination most sensitive region (P-well below N+ source). simulation result shows can enhance SEB survivability significantly. critical value linear energy transfer (LET), which indicates maximum deposited on...

This paper is a study on the transient overvoltage across converter valve in hybrid ultra high voltage direct current(UHVDC) transmission system which rectifier adopts Line commutated Converter(LCC), and inverter Source Converter(VSC). The arrester configuration for UHVDC proposed, electromagnetic model of built. Based model, stress are obtained conditions three-phase grounded fault at ac system, single-phase side upper bridge transformer dc line fault. It shows that arresters very large it...