A5057545880- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and interfaces
- Electromagnetic Compatibility and Noise Suppression
- Copper Interconnects and Reliability
- GaN-based semiconductor devices and materials
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Molecular Junctions and Nanostructures
- Multilevel Inverters and Converters
- Surface Chemistry and Catalysis
- Thin-Film Transistor Technologies
- Ga2O3 and related materials
- Radiation Effects in Electronics
- Advanced DC-DC Converters
- HVDC Systems and Fault Protection
- Quantum optics and atomic interactions
- Electrostatic Discharge in Electronics
- Additive Manufacturing Materials and Processes
- Atomic and Subatomic Physics Research
- Graphite, nuclear technology, radiation studies
- Advanced ceramic materials synthesis
- Aluminum Alloys Composites Properties
- Nuclear Physics and Applications
Institute of Microelectronics
2016-2025
Chinese Academy of Sciences
2016-2025
National Institute for Radiological Protection
2025
China Medical University
2023-2024
First Hospital of China Medical University
2023-2024
Inner Mongolia Normal University
2023
University of Chinese Academy of Sciences
2012-2021
Harbin University
2020
Institute of Applied Physics and Computational Mathematics
2020
Key Laboratory of Nuclear Radiation and Nuclear Energy Technology
2019
The adsorption of cobalt (II) octaethylporphyrin (CoOEP) and 2H-octaethylporphyrin (2HOEP) on Ag(111) was investigated with scanning tunneling microscopy (STM) photoelectron spectroscopy (XPS/UPS), in order to achieve a detailed mechanistic understanding the surface chemical bond coordinated metal ions. Previous studies related systems, especially tetraphenylporphyrin (CoTPP) Ag(111), have revealed adsorption-induced changes oxidation state Co ion appearance new valence state. These effects...
In this article, the single-event response of 1.2-kV silicon-carbide (SiC) power MOSFETs with varied buffer layer designs is investigated by 2-D numerical simulations. The structural parameters layers are compared and analyzed to understand transient after heavy ion strike related physical mechanisms comprehensively. Simulation results reveal that an optimized single structure can be acquired using a relatively thicker (T μm) moderate doping concentration (D cm <sup...
To promote the capacity of adsorbing radioactive iodine (I-) in acid and alkaline situations, a high-removal-efficiency adsorbent based on silver oxide (Ag2O) magnesium hydroxide (Mg(OH)2) was synthesized by situ method. determine mechanism this novel absorbent, batch experiments related to temperature, pH, competitive ion (Cl-), kinetic analysis were carried out. The results showed that Ag2O-Mg(OH)2 plate composites had high adsorption efficiency for I- (409 mg/g, 25 °C) with wide range pH...
The total ionizing dose (TID) test standards have been developed based on silicon devices to evaluate the TID response of MOS for space use. To estimate applicability existing wide-gap semiconductor carbide (SiC) devices, 1200 V SiC n-channel MOSFETs from three manufacturers were irradiated with Cobalt-60 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\gamma $ </tex-math></inline-formula> -rays at high...
Low resistivity Ni/Ti/Al ohmic contacts on p-type 4H-SiC epilayer were developed, and their thermal stabilities also experimentally investigated through high temperature storage at 600 °C for 100 h. The contact resistance of the Al/Ti/Ni/SiC degraded in different degrees, morphology deteriorated with increases average surface roughness interface voids. X-ray spectra showed that Ni2Si Ti3SiC2, which formed during annealing contributed to low resistivity, stable under storage. existence TiAl3...
Unmodified racemic sites on heterogeneous chiral catalysts reduce their overall enantioselectivity, but this effect is mitigated in the Orito reaction (methyl pyruvate (MP) hydrogenation to methyl lactate) by an increased reactivity. Here, explored a R-1-(1-naphthyl)ethylamine (NEA)-modified Pd(111) model catalyst where temperature-programmed desorption experiments reveal that NEA accelerates rates of both MP and H/D exchange. NEA+MP docking complexes are imaged using scanning tunnelling...
The paper presents the project and development strategy of a continuously operating high-flux (>) fusion volumetric neutron source. proposed facility is based on gas-dynamic magnetic plasma confinement device with high-power () neutral beam injection. Project roadmap includes construction several prototype installations addressing specific set physics engineering problems, starting from continuous operation critical subsystems ending advanced problems to axisymmetric mirror-based machines....
The adsorption of Ca on poly(3-hexylthiophene) (P3HT) has been studied by microcalorimetry, atomic beam/surface scattering, X-ray photoelectron spectroscopy (XPS), low-energy He+ ion scattering (LEIS), and first-principles calculations. sticking probability P3HT is initially 0.35 increases to almost unity 5 ML. A very high initial heat in the first 0.02 ML (625−500 kJ/mol) attributed reaction with defect sites or residual contamination. Between 0.1 0.5 ML, there a nearly constant 405 kJ/mol,...
SiC MOSFET integrated with Schottky barrier diode (SBD) can handle the reverse current during switching operation and reduce package cost. However, SBD weakens high-voltage-withstanding capability of MOSFET. In this article, a novel 4H-SiC trench mesa-sidewall (TMS-SBD) is proposed studied 2-D simulation. Compared locating on mesa (TM-SBD), TMS-SBD shows larger breakdown voltage (BV), lower electric field in gate oxide, better tradeoff between BV specific ON-resistance. The also same as that...
It is demonstrated that 1,4-phenylene diisocyanide (PDI)–gold oligomers can spontaneously bridge between gold nanoparticles on mica, thereby providing a strategy for electrically interconnecting nanoelectrodes. The barrier height of the bridging oligomer 0.10 ± 0.02 eV, within range previous single-molecule measurements PDI.
The adsorption of Ca on electron-irradiated poly(3-hexylthiophene) (P3HT) surfaces at 300 K (E(kin) = 100 eV) has been studied by microcalorimetry, atomic beam/surface scattering, X-ray photoelectron spectroscopy (XPS), and low-energy He(+) ion scattering (LEIS). results are compared to previous studies pristine P3HT. major structural effect electron irradiation is a substantial increase in the fraction unsaturated carbon atoms, probably result electron-induced hydrogen abstraction from...
Tung's model was used to analyze anomalies observed in Ti/SiC Schottky contacts. The degree of the inhomogeneous barrier after annealing at different temperatures is characterized by 'T0 anomaly' and difference (△Φ) between uniformly high height (ΦB0) effective (ΦBeff). Those two parameters Ti contacts on 4H—SiC were deduced from I–V measurements temperature range 298 K–503 K. increase (SB) (ΦB) decrease ideality factor (n) with an measurement indicate presence SB. inhomogeneity depends...
The <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula> – notation="LaTeX">${V}$ characteristics of 4H-SiC N/P-channel MOSFETs have been carried out at high temperatures up to 300 °C. Different scattering mechanisms surface mobility for N-channel studied in this article. Moreover, the temperature dependencies various mobilities P-channel are given first time. Their were...
The Schottky behaviour of Ni/Au contact on n-GaN was investigated under various annealing conditions by current–voltage (I–V) measurements. A non-linear fitting method used to extract the parameters from I–V characteristic curves. Experimental results indicate that high quality with a barrier height and ideality factor 0.86±0.02 eV 1.19±0.02 eV, respectively, can be obtained 5 min at 600°C in N2 ambience.
The structures of low coverages methyl pyruvate on a Pd(111) surface at 120 K were studied using scanning tunneling microscopy in ultrahigh vacuum. experimentally observed images assigned to adsorbate combination density functional theory calculations and by simulating the Bardeen method. Two forms identified. first, previously found reflection–absorption infrared spectroscopy, was flat-lying, keto form cis-methyl pyruvate. It characterized elongated, two-lobed with long axes oriented ∼0...
Leakage current of 1200-V 4H-SiC Schottky barrier diodes (SBDs) with different structures increased by various degrees after heavy-ion exposure. By taking <inline-formula> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula>–<inline-formula> notation="LaTeX">${V}$ </tex-math></inline-formula> measurements in a range 298 to 448 K, the voltage dependence saturation (<inline-formula> notation="LaTeX">$I_{0}$ </tex-math></inline-formula>), height notation="LaTeX">$\phi _{B0}$ and...
The threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}$ </tex-math></inline-formula> ) instability induced by gate stress has always been a significant reliability issue for silicon carbide (SiC) MOSFET. negative bias temperature (NBTI) of 4H-SiC p-channel MOSFET (pMOS) was studied experimentally at 200 °C and compared with that n-channel (nMOS). It is shown the drift pMOS...
In modern digital systems, on-chip interconnects have become the system bottleneck, limiting performance of high-speed clock distributions and data communications in terms speed power dissipation. An inverse signaling analysis is developed to optimize driving signal waveforms for lossy interconnects. By specifying parameters, i.e., swing edge rate interconnect output signal, corresponding input signals can be derived analytically. The result used guide design preemphasis drivers. Numerical...